JP2025519414A - 非等温湿式原子層エッチングの方法 - Google Patents

非等温湿式原子層エッチングの方法 Download PDF

Info

Publication number
JP2025519414A
JP2025519414A JP2024571342A JP2024571342A JP2025519414A JP 2025519414 A JP2025519414 A JP 2025519414A JP 2024571342 A JP2024571342 A JP 2024571342A JP 2024571342 A JP2024571342 A JP 2024571342A JP 2025519414 A JP2025519414 A JP 2025519414A
Authority
JP
Japan
Prior art keywords
solution
temperature
substrate
dissolution
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024571342A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025519414A5 (enExample
Inventor
アベル，ケイト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/835,065 external-priority patent/US12506014B2/en
Application filed by Tokyo Electron US Holdings Inc filed Critical Tokyo Electron US Holdings Inc
Publication of JP2025519414A publication Critical patent/JP2025519414A/ja
Publication of JP2025519414A5 publication Critical patent/JP2025519414A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
    • C23C22/58—Treatment of other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/60—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/73—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/78—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Silicon Compounds (AREA)
JP2024571342A 2022-06-08 2023-05-01 非等温湿式原子層エッチングの方法 Pending JP2025519414A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/835,065 US12506014B2 (en) 2021-10-19 2022-06-08 Methods for non-isothermal wet atomic layer etching
US17/835,065 2022-06-08
PCT/US2023/020568 WO2023239495A1 (en) 2022-06-08 2023-05-01 Methods for non-isothermal wet atomic layer etching

Publications (2)

Publication Number Publication Date
JP2025519414A true JP2025519414A (ja) 2025-06-26
JP2025519414A5 JP2025519414A5 (enExample) 2026-04-28

Family

ID=89118802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024571342A Pending JP2025519414A (ja) 2022-06-08 2023-05-01 非等温湿式原子層エッチングの方法

Country Status (4)

Country Link
JP (1) JP2025519414A (enExample)
KR (1) KR20250020402A (enExample)
TW (1) TW202405932A (enExample)
WO (1) WO2023239495A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12604691B2 (en) 2023-08-30 2026-04-14 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
WO2025221366A1 (en) * 2024-04-16 2025-10-23 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
TW202617934A (zh) * 2024-09-29 2026-05-01 日商東京威力科創股份有限公司 使用鹵化反應之鎢的濕式原子層蝕刻的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335294B1 (en) * 1999-04-22 2002-01-01 International Business Machines Corporation Wet cleans for cobalt disilicide processing
US9646883B2 (en) * 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
WO2017099718A1 (en) * 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

Also Published As

Publication number Publication date
TW202405932A (zh) 2024-02-01
KR20250020402A (ko) 2025-02-11
WO2023239495A1 (en) 2023-12-14

Similar Documents

Publication Publication Date Title
US12506014B2 (en) Methods for non-isothermal wet atomic layer etching
JP7784603B2 (ja) ルテニウムの湿式原子層エッチング方法
US11437250B2 (en) Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions
KR102694693B1 (ko) 자기 제어 및 용해도 제한 반응을 사용하는 습식 원자층 에칭
US12276033B2 (en) Methods for wet etching of noble metals
KR20250020402A (ko) 비등온 습식 원자 층 에칭 방법
US11866831B2 (en) Methods for wet atomic layer etching of copper
JP2012503328A (ja) 化学物質の順次適用を使用した半導体基板の表面処理のための方法及び装置
US12604691B2 (en) Methods for wet atomic layer etching of molybdenum in aqueous solution
US12463050B2 (en) Methods for wet atomic layer etching of molybdenum
US20250308929A1 (en) Methods for wet atomic layer etching of tungsten using halogenation
US20260096367A1 (en) Methods for wet atomic layer etching of titanium nitride using halogenation
JP7827394B2 (ja) ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法
US20250308917A1 (en) Methods for wet atomic layer etching of tungsten
TW202441025A (zh) 貴金屬濕蝕刻方法
WO2026072113A1 (en) Methods for wet atomic layer etching of tungsten using halogenation
TW202614227A (zh) 在水溶液中鉬的濕式原子層蝕刻方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260420