JP2024506950A5 - - Google Patents

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Publication number
JP2024506950A5
JP2024506950A5 JP2023549864A JP2023549864A JP2024506950A5 JP 2024506950 A5 JP2024506950 A5 JP 2024506950A5 JP 2023549864 A JP2023549864 A JP 2023549864A JP 2023549864 A JP2023549864 A JP 2023549864A JP 2024506950 A5 JP2024506950 A5 JP 2024506950A5
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JP
Japan
Prior art keywords
substrate
surface modification
phase
complex
liquid solvent
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JP2023549864A
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English (en)
Japanese (ja)
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JP7827394B2 (ja
JP2024506950A (ja
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Priority claimed from US17/580,879 external-priority patent/US12444610B2/en
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Priority claimed from PCT/US2022/014540 external-priority patent/WO2022177727A1/en
Publication of JP2024506950A publication Critical patent/JP2024506950A/ja
Publication of JP2024506950A5 publication Critical patent/JP2024506950A5/ja
Application granted granted Critical
Publication of JP7827394B2 publication Critical patent/JP7827394B2/ja
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JP2023549864A 2021-02-19 2022-01-31 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 Active JP7827394B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163151579P 2021-02-19 2021-02-19
US63/151,579 2021-02-19
US17/580,879 2022-01-21
US17/580,879 US12444610B2 (en) 2018-11-15 2022-01-21 Methods for etching a substrate using a hybrid wet atomic layer etching process
PCT/US2022/014540 WO2022177727A1 (en) 2021-02-19 2022-01-31 Methods for etching a substrate using a hybrid wet atomic layer etching process

Publications (3)

Publication Number Publication Date
JP2024506950A JP2024506950A (ja) 2024-02-15
JP2024506950A5 true JP2024506950A5 (enExample) 2025-01-30
JP7827394B2 JP7827394B2 (ja) 2026-03-10

Family

ID=82931928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023549864A Active JP7827394B2 (ja) 2021-02-19 2022-01-31 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法

Country Status (4)

Country Link
JP (1) JP7827394B2 (enExample)
KR (1) KR102941905B1 (enExample)
TW (1) TWI922586B (enExample)
WO (1) WO2022177727A1 (enExample)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100677965B1 (ko) * 1999-11-01 2007-02-01 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
JP3768802B2 (ja) * 1999-11-01 2006-04-19 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP4606793B2 (ja) * 2004-07-01 2011-01-05 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US20170243755A1 (en) * 2016-02-23 2017-08-24 Tokyo Electron Limited Method and system for atomic layer etching
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10804370B2 (en) * 2017-03-15 2020-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10982335B2 (en) 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

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