TWI922586B - 使用混合型濕式原子層蝕刻製程蝕刻基板的方法 - Google Patents

使用混合型濕式原子層蝕刻製程蝕刻基板的方法

Info

Publication number
TWI922586B
TWI922586B TW111105390A TW111105390A TWI922586B TW I922586 B TWI922586 B TW I922586B TW 111105390 A TW111105390 A TW 111105390A TW 111105390 A TW111105390 A TW 111105390A TW I922586 B TWI922586 B TW I922586B
Authority
TW
Taiwan
Prior art keywords
substrate
etching
ale
liquid
layer
Prior art date
Application number
TW111105390A
Other languages
English (en)
Chinese (zh)
Other versions
TW202247251A (zh
Inventor
保羅 阿貝爾
賈克斯 法各克
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/580,879 external-priority patent/US12444610B2/en
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202247251A publication Critical patent/TW202247251A/zh
Application granted granted Critical
Publication of TWI922586B publication Critical patent/TWI922586B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW111105390A 2021-02-19 2022-02-15 使用混合型濕式原子層蝕刻製程蝕刻基板的方法 TWI922586B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163151579P 2021-02-19 2021-02-19
US63/151,579 2021-02-19
US17/580,879 2022-01-21
US17/580,879 US12444610B2 (en) 2018-11-15 2022-01-21 Methods for etching a substrate using a hybrid wet atomic layer etching process

Publications (2)

Publication Number Publication Date
TW202247251A TW202247251A (zh) 2022-12-01
TWI922586B true TWI922586B (zh) 2026-04-21

Family

ID=82931928

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111105390A TWI922586B (zh) 2021-02-19 2022-02-15 使用混合型濕式原子層蝕刻製程蝕刻基板的方法

Country Status (4)

Country Link
JP (1) JP7827394B2 (enExample)
KR (1) KR102941905B1 (enExample)
TW (1) TWI922586B (enExample)
WO (1) WO2022177727A1 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6513537B1 (en) * 1999-11-01 2003-02-04 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20180269307A1 (en) * 2017-03-15 2018-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device, Method, and Tool of Manufacture

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3768802B2 (ja) * 1999-11-01 2006-04-19 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP4606793B2 (ja) * 2004-07-01 2011-01-05 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US20170243755A1 (en) * 2016-02-23 2017-08-24 Tokyo Electron Limited Method and system for atomic layer etching
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10982335B2 (en) 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6513537B1 (en) * 1999-11-01 2003-02-04 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20180269307A1 (en) * 2017-03-15 2018-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device, Method, and Tool of Manufacture

Also Published As

Publication number Publication date
KR20230145342A (ko) 2023-10-17
WO2022177727A1 (en) 2022-08-25
JP7827394B2 (ja) 2026-03-10
TW202247251A (zh) 2022-12-01
JP2024506950A (ja) 2024-02-15
KR102941905B1 (ko) 2026-03-19

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