JP7883709B2 - ハロゲン化に基づくルテニウムｃｍｐ化学物質 - Google Patents

ハロゲン化に基づくルテニウムｃｍｐ化学物質

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Publication number
JP7883709B2
JP7883709B2 JP2024519970A JP2024519970A JP7883709B2 JP 7883709 B2 JP7883709 B2 JP 7883709B2 JP 2024519970 A JP2024519970 A JP 2024519970A JP 2024519970 A JP2024519970 A JP 2024519970A JP 7883709 B2 JP7883709 B2 JP 7883709B2
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JP
Japan
Prior art keywords
ruthenium
ligand
ruthenium surface
agent
slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024519970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024538953A5 (enExample
JP2024538953A (ja
Inventor
アベル，ケイト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/674,579 external-priority patent/US11802342B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2024538953A publication Critical patent/JP2024538953A/ja
Publication of JP2024538953A5 publication Critical patent/JP2024538953A5/ja
Application granted granted Critical
Publication of JP7883709B2 publication Critical patent/JP7883709B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2024519970A 2021-10-19 2022-08-29 ハロゲン化に基づくルテニウムｃｍｐ化学物質 Active JP7883709B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US202163257214P 2021-10-19 2021-10-19
US63/257,214 2021-10-19
US17/674,593 US11820919B2 (en) 2021-10-19 2022-02-17 Ruthenium CMP chemistry based on halogenation
US17/674,579 2022-02-17
US17/674,593 2022-02-17
US17/674,579 US11802342B2 (en) 2021-10-19 2022-02-17 Methods for wet atomic layer etching of ruthenium
PCT/US2022/041873 WO2023069198A1 (en) 2021-10-19 2022-08-29 Ruthenium cmp chemistry based on halogenation

Publications (3)

Publication Number Publication Date
JP2024538953A JP2024538953A (ja) 2024-10-28
JP2024538953A5 JP2024538953A5 (enExample) 2025-05-23
JP7883709B2 true JP7883709B2 (ja) 2026-07-02

Family

ID=85982714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024519970A Active JP7883709B2 (ja) 2021-10-19 2022-08-29 ハロゲン化に基づくルテニウムｃｍｐ化学物質

Country Status (4)

Country Link
US (2) US11820919B2 (enExample)
JP (1) JP7883709B2 (enExample)
KR (1) KR102983327B1 (enExample)
WO (1) WO2023069198A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158194A (ja) 2000-11-20 2002-05-31 Toshiba Corp 化学的機械的研磨用スラリ及び半導体装置の製造方法
JP2008516465A (ja) 2004-10-12 2008-05-15 キャボット マイクロエレクトロニクス コーポレイション 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物
US20090004860A1 (en) 2007-06-30 2009-01-01 Lavoie Adrien R Atomic layer volatilization process for metal layers
WO2019190738A1 (en) 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition

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Publication number Priority date Publication date Assignee Title
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
KR100535074B1 (ko) 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
KR100444308B1 (ko) 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100648264B1 (ko) 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
US8591763B2 (en) 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8008202B2 (en) 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
WO2009054370A1 (ja) 2007-10-23 2009-04-30 Hitachi Chemical Company, Ltd. Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
KR101210125B1 (ko) 2010-12-14 2012-12-07 한양대학교 산학협력단 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법
US8906123B2 (en) 2010-12-29 2014-12-09 Air Products And Chemicals Inc. CMP slurry/method for polishing ruthenium and other films
CN103252710B (zh) 2013-04-08 2016-04-20 清华大学 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法
US20160107286A1 (en) 2013-04-25 2016-04-21 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
JP2022512187A (ja) 2018-12-10 2022-02-02 シーエムシー マテリアルズ，インコーポレイティド ルテニウムｃｍｐ用の酸化剤不含スラリー
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
CN114945648B (zh) 2020-02-13 2025-06-20 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158194A (ja) 2000-11-20 2002-05-31 Toshiba Corp 化学的機械的研磨用スラリ及び半導体装置の製造方法
JP2008516465A (ja) 2004-10-12 2008-05-15 キャボット マイクロエレクトロニクス コーポレイション 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物
US20090004860A1 (en) 2007-06-30 2009-01-01 Lavoie Adrien R Atomic layer volatilization process for metal layers
WO2019190738A1 (en) 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition
JP2021535938A (ja) 2018-03-28 2021-12-23 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド ルテニウムバルクの化学機械研磨組成物

Also Published As

Publication number Publication date
US20240043721A1 (en) 2024-02-08
KR102983327B1 (ko) 2026-06-26
KR20240087752A (ko) 2024-06-19
US11820919B2 (en) 2023-11-21
WO2023069198A1 (en) 2023-04-27
US12037517B2 (en) 2024-07-16
US20230118455A1 (en) 2023-04-20
JP2024538953A (ja) 2024-10-28
TW202334340A (zh) 2023-09-01

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