JP2024529041A5 - - Google Patents
Info
- Publication number
- JP2024529041A5 JP2024529041A5 JP2024507016A JP2024507016A JP2024529041A5 JP 2024529041 A5 JP2024529041 A5 JP 2024529041A5 JP 2024507016 A JP2024507016 A JP 2024507016A JP 2024507016 A JP2024507016 A JP 2024507016A JP 2024529041 A5 JP2024529041 A5 JP 2024529041A5
- Authority
- JP
- Japan
- Prior art keywords
- subassembly
- ferroelectric
- electrode
- spin
- polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2108563A FR3126085B1 (fr) | 2021-08-06 | 2021-08-06 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
| FR2108563 | 2021-08-06 | ||
| PCT/EP2022/072003 WO2023012302A1 (fr) | 2021-08-06 | 2022-08-04 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024529041A JP2024529041A (ja) | 2024-08-01 |
| JP2024529041A5 true JP2024529041A5 (https=) | 2025-08-13 |
Family
ID=79602302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024507016A Pending JP2024529041A (ja) | 2021-08-06 | 2022-08-04 | 電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240349617A1 (https=) |
| EP (1) | EP4381917B1 (https=) |
| JP (1) | JP2024529041A (https=) |
| FR (1) | FR3126085B1 (https=) |
| WO (1) | WO2023012302A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI889298B (zh) * | 2024-04-19 | 2025-07-01 | 力晶積成電子製造股份有限公司 | 鐵電電容器結構 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017214628A1 (en) * | 2016-06-10 | 2017-12-14 | Cornell University | Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect |
| US11410021B2 (en) * | 2018-10-30 | 2022-08-09 | Intel Corporation | Recurrent neuron implementation based on magneto-electric spin orbit logic |
| FR3091412B1 (fr) * | 2018-12-28 | 2022-05-20 | Thales Sa | Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension |
| CN111755447B (zh) * | 2020-07-13 | 2023-05-12 | 湘潭大学 | 一种基于多逻辑态的高密度铁电存储单元及其调控方法 |
| US20240224814A1 (en) * | 2022-12-29 | 2024-07-04 | Intel Corporation | Chiral coupling-based valleytronic magnetoelectric spin-orbit devices |
-
2021
- 2021-08-06 FR FR2108563A patent/FR3126085B1/fr active Active
-
2022
- 2022-08-04 WO PCT/EP2022/072003 patent/WO2023012302A1/fr not_active Ceased
- 2022-08-04 EP EP22761999.6A patent/EP4381917B1/fr active Active
- 2022-08-04 US US18/294,849 patent/US20240349617A1/en active Pending
- 2022-08-04 JP JP2024507016A patent/JP2024529041A/ja active Pending
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