FR3126085B1 - Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé - Google Patents
Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé Download PDFInfo
- Publication number
- FR3126085B1 FR3126085B1 FR2108563A FR2108563A FR3126085B1 FR 3126085 B1 FR3126085 B1 FR 3126085B1 FR 2108563 A FR2108563 A FR 2108563A FR 2108563 A FR2108563 A FR 2108563A FR 3126085 B1 FR3126085 B1 FR 3126085B1
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- FR
- France
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- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/20—Spin-polarised current-controlled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/385—Devices using spin-polarised carriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
- H10N52/85—Materials of the active region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2108563A FR3126085B1 (fr) | 2021-08-06 | 2021-08-06 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
| JP2024507016A JP2024529041A (ja) | 2021-08-06 | 2022-08-04 | 電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス |
| PCT/EP2022/072003 WO2023012302A1 (fr) | 2021-08-06 | 2022-08-04 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
| US18/294,849 US20240349617A1 (en) | 2021-08-06 | 2022-08-04 | Electronic device and associated system, in particular memory, logic device or neuromorphic device |
| EP22761999.6A EP4381917B1 (fr) | 2021-08-06 | 2022-08-04 | Dispositif électronique et système, notamment une mémoire, dispositif logique ou dispositif neuromorphique, associé |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2108563A FR3126085B1 (fr) | 2021-08-06 | 2021-08-06 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
| FR2108563 | 2021-08-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3126085A1 FR3126085A1 (fr) | 2023-02-10 |
| FR3126085B1 true FR3126085B1 (fr) | 2023-08-25 |
Family
ID=79602302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR2108563A Active FR3126085B1 (fr) | 2021-08-06 | 2021-08-06 | Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240349617A1 (https=) |
| EP (1) | EP4381917B1 (https=) |
| JP (1) | JP2024529041A (https=) |
| FR (1) | FR3126085B1 (https=) |
| WO (1) | WO2023012302A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI889298B (zh) * | 2024-04-19 | 2025-07-01 | 力晶積成電子製造股份有限公司 | 鐵電電容器結構 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017214628A1 (en) * | 2016-06-10 | 2017-12-14 | Cornell University | Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect |
| US11410021B2 (en) * | 2018-10-30 | 2022-08-09 | Intel Corporation | Recurrent neuron implementation based on magneto-electric spin orbit logic |
| FR3091412B1 (fr) * | 2018-12-28 | 2022-05-20 | Thales Sa | Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension |
| CN111755447B (zh) * | 2020-07-13 | 2023-05-12 | 湘潭大学 | 一种基于多逻辑态的高密度铁电存储单元及其调控方法 |
| US20240224814A1 (en) * | 2022-12-29 | 2024-07-04 | Intel Corporation | Chiral coupling-based valleytronic magnetoelectric spin-orbit devices |
-
2021
- 2021-08-06 FR FR2108563A patent/FR3126085B1/fr active Active
-
2022
- 2022-08-04 WO PCT/EP2022/072003 patent/WO2023012302A1/fr not_active Ceased
- 2022-08-04 EP EP22761999.6A patent/EP4381917B1/fr active Active
- 2022-08-04 US US18/294,849 patent/US20240349617A1/en active Pending
- 2022-08-04 JP JP2024507016A patent/JP2024529041A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2024529041A (ja) | 2024-08-01 |
| FR3126085A1 (fr) | 2023-02-10 |
| US20240349617A1 (en) | 2024-10-17 |
| EP4381917A1 (fr) | 2024-06-12 |
| WO2023012302A1 (fr) | 2023-02-09 |
| EP4381917B1 (fr) | 2025-06-04 |
| EP4381917C0 (fr) | 2025-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 2 |
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| PLSC | Publication of the preliminary search report |
Effective date: 20230210 |
|
| PLFP | Fee payment |
Year of fee payment: 3 |
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| PLFP | Fee payment |
Year of fee payment: 4 |
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| PLFP | Fee payment |
Year of fee payment: 5 |