GB829210A - Improvements in or relating to ferroelectric data storage devices - Google Patents

Improvements in or relating to ferroelectric data storage devices

Info

Publication number
GB829210A
GB829210A GB39035/56A GB3903556A GB829210A GB 829210 A GB829210 A GB 829210A GB 39035/56 A GB39035/56 A GB 39035/56A GB 3903556 A GB3903556 A GB 3903556A GB 829210 A GB829210 A GB 829210A
Authority
GB
United Kingdom
Prior art keywords
electrodes
ferro
electric
polarization
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39035/56A
Inventor
Brian Lewis
Eric Alfred Dutton White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB39035/56A priority Critical patent/GB829210A/en
Publication of GB829210A publication Critical patent/GB829210A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors

Abstract

829,210. Circuits employing bi-stable ferroelectric devices. GENERAL ELECTRIC CO. Ltd. March 21, 1958 [Dec. 21, 1956], No. 39035/56. Class 40 (9). [Also in Groups XIX and XXXVI] A ferro-electric data storage device in which ferro-electric material having two stable polarization states is interposed between a pair of electrodes, has an electrical connection to one of the electrodes over a path including photoconductive material such that when light is incident on that material its resistance is relative low. As shown, Fig. 1, a matrix store comprises a block 10 of ferro-electric material such as barium titanate having individual gold electrodes 12 on one side and continuous gold strip electrodes 13 on the other side, the connection to the electrodes 12 being from gold strips 15 via photo-conductive strips 11, of a material such as activated cadmium sulphide. Binary information to be stored as alternative polarization states arrives as electrical pulses at the terminal 22, the storage row being determined by a switching circuit 21, the storage column being selected by scanning the columns sequentially with a narrow beam of light 27, which renders conductive the photo-conductive material 11 on which it falls, the input information being synchronized with the movement of the light beam 27 so that in the particular row in which the information is being written a bit is stored only in the element corresponding to that electrode 12 to which a path of reduced resistance is provided by the light beam. Read-out.-The light beam 27 may be utilized in reading out the stored information, the electrodes 12 being so thin that light penetrates into the ferro-electric material, causing a rise in temperature which affects the polarization of the material, a signal of polarity depending on the polarity of the polarization of the ferro-electric material being produced, which signal is applied to the corresponding lead 16-20, the particular lead required for read-out being selected by the switch 21, and the output signal appearing at 26 after amplification and detection at 24. Alternatively, read-out may be accomplished by applying a suitable voltage pulse in a given sense resulting in a large or negligible polarization change according to the binary digit stored. Specification 823,187 is referred to.
GB39035/56A 1956-12-21 1956-12-21 Improvements in or relating to ferroelectric data storage devices Expired GB829210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB39035/56A GB829210A (en) 1956-12-21 1956-12-21 Improvements in or relating to ferroelectric data storage devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB39035/56A GB829210A (en) 1956-12-21 1956-12-21 Improvements in or relating to ferroelectric data storage devices

Publications (1)

Publication Number Publication Date
GB829210A true GB829210A (en) 1960-03-02

Family

ID=10407208

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39035/56A Expired GB829210A (en) 1956-12-21 1956-12-21 Improvements in or relating to ferroelectric data storage devices

Country Status (1)

Country Link
GB (1) GB829210A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298131B (en) * 1960-03-29 1969-06-26 Rank Xerox Ltd Method of storing information
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell
WO2020017877A1 (en) 2018-07-20 2020-01-23 Samsung Electronics Co., Ltd. Electronic device including variable capacitor including photo-conductive material and method for controlling the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298131B (en) * 1960-03-29 1969-06-26 Rank Xerox Ltd Method of storing information
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell
US7924599B1 (en) 1987-06-02 2011-04-12 Ramtron International Corporation Non-volatile memory circuit using ferroelectric capacitor storage element
WO2020017877A1 (en) 2018-07-20 2020-01-23 Samsung Electronics Co., Ltd. Electronic device including variable capacitor including photo-conductive material and method for controlling the same
EP3776610A4 (en) * 2018-07-20 2021-06-16 Samsung Electronics Co., Ltd. Electronic device including variable capacitor including photo-conductive material and method for controlling the same

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