FR3091412B1 - Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension - Google Patents

Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension Download PDF

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Publication number
FR3091412B1
FR3091412B1 FR1874319A FR1874319A FR3091412B1 FR 3091412 B1 FR3091412 B1 FR 3091412B1 FR 1874319 A FR1874319 A FR 1874319A FR 1874319 A FR1874319 A FR 1874319A FR 3091412 B1 FR3091412 B1 FR 3091412B1
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FR
France
Prior art keywords
voltage
generating
electronic device
ferroelectric
analog component
Prior art date
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Active
Application number
FR1874319A
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English (en)
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FR3091412A1 (fr
Inventor
Manuel Bibes
Laurent Vila
Jean-Philippe Attané
Paul Noël
Vaz Diogo Castro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Thales SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1874319A priority Critical patent/FR3091412B1/fr
Priority to PCT/EP2019/087111 priority patent/WO2020136267A1/fr
Priority to US17/418,667 priority patent/US11417453B2/en
Priority to CN201980087001.5A priority patent/CN113228320A/zh
Priority to EP19829654.3A priority patent/EP3903357A1/fr
Publication of FR3091412A1 publication Critical patent/FR3091412A1/fr
Application granted granted Critical
Publication of FR3091412B1 publication Critical patent/FR3091412B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension La présente invention se rapporte à Dispositif électronique (10), comportant une entrée (12) et une sortie (14), le dispositif (10) générant une tension en sortie lorsque le dispositif (10) est alimenté en entrée, le dispositif (10) comprenant : - une unité de conversion (16) convertissant un courant de spin en un courant de charge présentant une amplitude et un signe, - une unité d’application de courant de spin (20) appliquant un courant de spin à l’unité de conversion (16), - une couche ferroélectrique (22) présentant une polarisation ferroélectrique et étant agencée pour que la polarisation ferroélectrique contrôle l’amplitude et/ou le signe du courant de charge, et - une unité d’application d’un champ électrique (24) propre à appliquer un champ électrique sur la couche ferroélectrique (22) pour contrôler la polarisation ferroélectrique.. Figure pour l'abrégé : Figure 1
FR1874319A 2018-12-28 2018-12-28 Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension Active FR3091412B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1874319A FR3091412B1 (fr) 2018-12-28 2018-12-28 Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension
PCT/EP2019/087111 WO2020136267A1 (fr) 2018-12-28 2019-12-27 Dispositif électronique, porte numérique, composant analogique et procédé de génération d'une tension
US17/418,667 US11417453B2 (en) 2018-12-28 2019-12-27 Electronic device, digital port, analog component, and method for generating a voltage
CN201980087001.5A CN113228320A (zh) 2018-12-28 2019-12-27 电子设备、数字端口、模拟部件和用于生成电压的方法
EP19829654.3A EP3903357A1 (fr) 2018-12-28 2019-12-27 Dispositif électronique, porte numérique, composant analogique et procédé de génération d'une tension

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1874319A FR3091412B1 (fr) 2018-12-28 2018-12-28 Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension

Publications (2)

Publication Number Publication Date
FR3091412A1 FR3091412A1 (fr) 2020-07-03
FR3091412B1 true FR3091412B1 (fr) 2022-05-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1874319A Active FR3091412B1 (fr) 2018-12-28 2018-12-28 Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension

Country Status (5)

Country Link
US (1) US11417453B2 (fr)
EP (1) EP3903357A1 (fr)
CN (1) CN113228320A (fr)
FR (1) FR3091412B1 (fr)
WO (1) WO2020136267A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270542B (zh) * 2021-05-13 2023-03-21 上海科技大学 一种基于iii-v族窄禁带半导体异质结构的自旋信号探测器
FR3126085B1 (fr) * 2021-08-06 2023-08-25 Commissariat Energie Atomique Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé
FR3134205B1 (fr) * 2022-03-30 2024-09-06 Thales Sa Dispositif logique et architecture de calcul logique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102327417B1 (ko) * 2014-12-26 2021-11-17 인텔 코포레이션 전하 인터커넥트들 및 자기전기 노드들을 갖는 스핀 궤도 로직
DE112015006896T5 (de) * 2015-09-10 2018-05-24 Intel Corporation Spinlogik mit magnetischen Isolatoren geschaltet durch Spin-Bahn-Kopplung
US11996129B2 (en) * 2016-06-10 2024-05-28 Cornell University Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
US10361292B2 (en) * 2017-02-17 2019-07-23 Intel Corporation Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling
WO2018182694A1 (fr) * 2017-03-31 2018-10-04 Intel Corporation Procédés et appareil pour neurones magnétoélectriques dans des réseaux neuronaux
US10276783B2 (en) * 2017-06-09 2019-04-30 Sandisk Technologies Llc Gate voltage controlled perpendicular spin orbit torque MRAM memory cell
US11502188B2 (en) * 2018-06-14 2022-11-15 Intel Corporation Apparatus and method for boosting signal in magnetoelectric spin orbit logic
US11785783B2 (en) * 2019-05-17 2023-10-10 Industry-Academic Cooperation Foundation, Yonsei University Spin logic device based on spin-charge conversion and spin logic array using the same

Also Published As

Publication number Publication date
WO2020136267A1 (fr) 2020-07-02
CN113228320A (zh) 2021-08-06
FR3091412A1 (fr) 2020-07-03
US20220076868A1 (en) 2022-03-10
EP3903357A1 (fr) 2021-11-03
US11417453B2 (en) 2022-08-16

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