JP2024529041A - 電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス - Google Patents

電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス Download PDF

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JP2024529041A
JP2024529041A JP2024507016A JP2024507016A JP2024529041A JP 2024529041 A JP2024529041 A JP 2024529041A JP 2024507016 A JP2024507016 A JP 2024507016A JP 2024507016 A JP2024507016 A JP 2024507016A JP 2024529041 A JP2024529041 A JP 2024529041A
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subassembly
ferroelectric
electrode
spin
contact
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JP2024507016A
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Japanese (ja)
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JP2024529041A5 (https=
Inventor
アタヌ ジャン－フィリップ
ビラ ローラン
ビベス マニュエル
Original Assignee
コミサリヤ ア レネルジ アトミク エ ウ エネルジ アルタナティブ
タレス
サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク
ウニベルシテ グルノーブル アルプ
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Publication of JP2024529041A publication Critical patent/JP2024529041A/ja
Publication of JP2024529041A5 publication Critical patent/JP2024529041A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP2024507016A 2021-08-06 2022-08-04 電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス Pending JP2024529041A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2108563A FR3126085B1 (fr) 2021-08-06 2021-08-06 Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé
FR2108563 2021-08-06
PCT/EP2022/072003 WO2023012302A1 (fr) 2021-08-06 2022-08-04 Dispositif électronique et système, notamment mémoire, dispositif logique ou dispositif neuromorphique, associé

Publications (2)

Publication Number Publication Date
JP2024529041A true JP2024529041A (ja) 2024-08-01
JP2024529041A5 JP2024529041A5 (https=) 2025-08-13

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ID=79602302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024507016A Pending JP2024529041A (ja) 2021-08-06 2022-08-04 電子デバイスおよび関連システム、特に、メモリ、論理デバイスまたはニューロモルフィックデバイス

Country Status (5)

Country Link
US (1) US20240349617A1 (https=)
EP (1) EP4381917B1 (https=)
JP (1) JP2024529041A (https=)
FR (1) FR3126085B1 (https=)
WO (1) WO2023012302A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI889298B (zh) * 2024-04-19 2025-07-01 力晶積成電子製造股份有限公司 鐵電電容器結構

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017214628A1 (en) * 2016-06-10 2017-12-14 Cornell University Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
US11410021B2 (en) * 2018-10-30 2022-08-09 Intel Corporation Recurrent neuron implementation based on magneto-electric spin orbit logic
FR3091412B1 (fr) * 2018-12-28 2022-05-20 Thales Sa Dispositif électronique, porte numérique, composant analogique et procédé de génération d’une tension
CN111755447B (zh) * 2020-07-13 2023-05-12 湘潭大学 一种基于多逻辑态的高密度铁电存储单元及其调控方法
US20240224814A1 (en) * 2022-12-29 2024-07-04 Intel Corporation Chiral coupling-based valleytronic magnetoelectric spin-orbit devices

Also Published As

Publication number Publication date
FR3126085B1 (fr) 2023-08-25
FR3126085A1 (fr) 2023-02-10
US20240349617A1 (en) 2024-10-17
EP4381917A1 (fr) 2024-06-12
WO2023012302A1 (fr) 2023-02-09
EP4381917B1 (fr) 2025-06-04
EP4381917C0 (fr) 2025-06-04

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