JP2024525835A5 - - Google Patents
Info
- Publication number
- JP2024525835A5 JP2024525835A5 JP2024502178A JP2024502178A JP2024525835A5 JP 2024525835 A5 JP2024525835 A5 JP 2024525835A5 JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024525835 A5 JP2024525835 A5 JP 2024525835A5
- Authority
- JP
- Japan
- Prior art keywords
- gate insulator
- semiconductor device
- power semiconductor
- region
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21186089.5A EP4120360A1 (en) | 2021-07-16 | 2021-07-16 | Power semiconductor device |
| EP21186089.5 | 2021-07-16 | ||
| PCT/EP2022/069637 WO2023285550A1 (en) | 2021-07-16 | 2022-07-13 | Power semiconductor device and production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024525835A JP2024525835A (ja) | 2024-07-12 |
| JP2024525835A5 true JP2024525835A5 (https=) | 2025-06-24 |
Family
ID=76958797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502178A Pending JP2024525835A (ja) | 2021-07-16 | 2022-07-13 | パワー半導体デバイスおよび製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4120360A1 (https=) |
| JP (1) | JP2024525835A (https=) |
| CN (1) | CN117652033A (https=) |
| DE (1) | DE212022000251U1 (https=) |
| WO (1) | WO2023285550A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102023121453A1 (de) * | 2023-08-10 | 2025-02-13 | Infineon Technologies Ag | Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke |
| CN119947212A (zh) * | 2023-10-30 | 2025-05-06 | 安世半导体科技(上海)有限公司 | 半导体器件及其制造方法 |
| CN117650164A (zh) * | 2023-10-31 | 2024-03-05 | 海信家电集团股份有限公司 | 半导体装置 |
| EP4694615A1 (en) * | 2024-08-09 | 2026-02-11 | Hitachi Energy Ltd | Semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1407476A4 (en) | 2000-08-08 | 2007-08-29 | Advanced Power Technology | POWER MOS MODULE WITH ASYMMETRIC CHANNEL STRUCTURE |
| JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
| US7382019B2 (en) * | 2005-04-26 | 2008-06-03 | Fairchild Semiconductor Corporation | Trench gate FETs with reduced gate to drain charge |
| US20070063269A1 (en) | 2005-09-20 | 2007-03-22 | International Rectifier Corp. | Trench IGBT with increased short circuit capability |
| WO2010001201A1 (en) * | 2008-06-30 | 2010-01-07 | Freescale Semiconductor, Inc. | Method of forming a power semiconductor device and power semiconductor device |
| JP2016054181A (ja) * | 2014-09-03 | 2016-04-14 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
| JP6203697B2 (ja) * | 2014-09-30 | 2017-09-27 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US10204909B2 (en) | 2015-12-22 | 2019-02-12 | Varian Semiconductor Equipment Associates, Inc. | Non-uniform gate oxide thickness for DRAM device |
-
2021
- 2021-07-16 EP EP21186089.5A patent/EP4120360A1/en active Pending
-
2022
- 2022-07-13 JP JP2024502178A patent/JP2024525835A/ja active Pending
- 2022-07-13 DE DE212022000251.2U patent/DE212022000251U1/de active Active
- 2022-07-13 CN CN202280050300.3A patent/CN117652033A/zh active Pending
- 2022-07-13 WO PCT/EP2022/069637 patent/WO2023285550A1/en not_active Ceased
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