DE212022000251U1 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung Download PDF

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Publication number
DE212022000251U1
DE212022000251U1 DE212022000251.2U DE212022000251U DE212022000251U1 DE 212022000251 U1 DE212022000251 U1 DE 212022000251U1 DE 212022000251 U DE212022000251 U DE 212022000251U DE 212022000251 U1 DE212022000251 U1 DE 212022000251U1
Authority
DE
Germany
Prior art keywords
gate insulator
region
channel region
semiconductor device
along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE212022000251.2U
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German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of DE212022000251U1 publication Critical patent/DE212022000251U1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE212022000251.2U 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung Active DE212022000251U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186089.5A EP4120360A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186089.5 2021-07-16
PCT/EP2022/069637 WO2023285550A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (1)

Publication Number Publication Date
DE212022000251U1 true DE212022000251U1 (de) 2024-04-15

Family

ID=76958797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE212022000251.2U Active DE212022000251U1 (de) 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung

Country Status (5)

Country Link
EP (1) EP4120360A1 (https=)
JP (1) JP2024525835A (https=)
CN (1) CN117652033A (https=)
DE (1) DE212022000251U1 (https=)
WO (1) WO2023285550A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke
CN119947212A (zh) * 2023-10-30 2025-05-06 安世半导体科技(上海)有限公司 半导体器件及其制造方法
CN117650164A (zh) * 2023-10-31 2024-03-05 海信家电集团股份有限公司 半导体装置
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1248300A2 (en) 2001-04-02 2002-10-09 Schindengen Electric Manufacturing Co., Ltd. Power MOSFET having a trench gate electrode and method of making the same
US6503786B2 (en) 2000-08-08 2003-01-07 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
US20070063269A1 (en) 2005-09-20 2007-03-22 International Rectifier Corp. Trench IGBT with increased short circuit capability
US20080166846A1 (en) 2005-04-26 2008-07-10 Fairchild Semiconductor Corporation Method of Forming Trench Gate FETs with Reduced Gate to Drain Charge
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20160093719A1 (en) 2014-09-30 2016-03-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
WO2017112276A1 (en) 2015-12-22 2017-06-29 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for dram device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001201A1 (en) * 2008-06-30 2010-01-07 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503786B2 (en) 2000-08-08 2003-01-07 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
EP1248300A2 (en) 2001-04-02 2002-10-09 Schindengen Electric Manufacturing Co., Ltd. Power MOSFET having a trench gate electrode and method of making the same
US20080166846A1 (en) 2005-04-26 2008-07-10 Fairchild Semiconductor Corporation Method of Forming Trench Gate FETs with Reduced Gate to Drain Charge
US20070063269A1 (en) 2005-09-20 2007-03-22 International Rectifier Corp. Trench IGBT with increased short circuit capability
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20160093719A1 (en) 2014-09-30 2016-03-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
WO2017112276A1 (en) 2015-12-22 2017-06-29 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for dram device

Also Published As

Publication number Publication date
JP2024525835A (ja) 2024-07-12
EP4120360A1 (en) 2023-01-18
CN117652033A (zh) 2024-03-05
WO2023285550A1 (en) 2023-01-19

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R207 Utility model specification
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Free format text: PREVIOUS MAIN CLASS: H01L0029423000

Ipc: H10D0064270000

R150 Utility model maintained after payment of first maintenance fee after three years