JP2024525829A5 - - Google Patents
Info
- Publication number
- JP2024525829A5 JP2024525829A5 JP2024502155A JP2024502155A JP2024525829A5 JP 2024525829 A5 JP2024525829 A5 JP 2024525829A5 JP 2024502155 A JP2024502155 A JP 2024502155A JP 2024502155 A JP2024502155 A JP 2024502155A JP 2024525829 A5 JP2024525829 A5 JP 2024525829A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- channel
- gate insulator
- doping concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21186114.1A EP4120357A1 (en) | 2021-07-16 | 2021-07-16 | Power semiconductor device |
| EP21186114.1 | 2021-07-16 | ||
| PCT/EP2022/069647 WO2023285557A1 (en) | 2021-07-16 | 2022-07-13 | Production method and power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024525829A JP2024525829A (ja) | 2024-07-12 |
| JP2024525829A5 true JP2024525829A5 (https=) | 2025-07-01 |
Family
ID=76958812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502155A Pending JP2024525829A (ja) | 2021-07-16 | 2022-07-13 | 製造方法およびパワー半導体デバイス |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4120357A1 (https=) |
| JP (1) | JP2024525829A (https=) |
| CN (1) | CN117693819A (https=) |
| DE (1) | DE212022000254U1 (https=) |
| WO (1) | WO2023285557A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118486734A (zh) * | 2024-05-31 | 2024-08-13 | 合肥艾创微电子科技有限公司 | 碳化硅沟槽栅金属氧化物半导体场效应晶体管及制备方法 |
| EP4694615A1 (en) * | 2024-08-09 | 2026-02-11 | Hitachi Energy Ltd | Semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4371521B2 (ja) * | 2000-03-06 | 2009-11-25 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
| EP1407476A4 (en) | 2000-08-08 | 2007-08-29 | Advanced Power Technology | POWER MOS MODULE WITH ASYMMETRIC CHANNEL STRUCTURE |
| US6573561B1 (en) | 2002-03-11 | 2003-06-03 | International Business Machines Corporation | Vertical MOSFET with asymmetrically graded channel doping |
| TWI222685B (en) * | 2003-12-18 | 2004-10-21 | Episil Technologies Inc | Metal oxide semiconductor device and fabricating method thereof |
| US8067797B2 (en) | 2007-10-17 | 2011-11-29 | International Rectifier Corporation | Variable threshold trench IGBT with offset emitter contacts |
| WO2010001201A1 (en) * | 2008-06-30 | 2010-01-07 | Freescale Semiconductor, Inc. | Method of forming a power semiconductor device and power semiconductor device |
| JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP2016054181A (ja) * | 2014-09-03 | 2016-04-14 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
| US11031461B2 (en) * | 2019-08-25 | 2021-06-08 | Genesic Semiconductor Inc. | Manufacture of robust, high-performance devices |
| US11309413B2 (en) * | 2019-10-10 | 2022-04-19 | Wolfspeed, Inc. | Semiconductor device with improved short circuit withstand time and methods for manufacturing the same |
-
2021
- 2021-07-16 EP EP21186114.1A patent/EP4120357A1/en not_active Withdrawn
-
2022
- 2022-07-13 WO PCT/EP2022/069647 patent/WO2023285557A1/en not_active Ceased
- 2022-07-13 JP JP2024502155A patent/JP2024525829A/ja active Pending
- 2022-07-13 DE DE212022000254.7U patent/DE212022000254U1/de active Active
- 2022-07-13 CN CN202280050197.2A patent/CN117693819A/zh active Pending
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