JP2024525829A - 製造方法およびパワー半導体デバイス - Google Patents

製造方法およびパワー半導体デバイス Download PDF

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Publication number
JP2024525829A
JP2024525829A JP2024502155A JP2024502155A JP2024525829A JP 2024525829 A JP2024525829 A JP 2024525829A JP 2024502155 A JP2024502155 A JP 2024502155A JP 2024502155 A JP2024502155 A JP 2024502155A JP 2024525829 A JP2024525829 A JP 2024525829A
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Japan
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region
channel
semiconductor device
gate insulator
doping concentration
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JP2024502155A
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Japanese (ja)
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JP2024525829A5 (https=
Inventor
グプタ，ガウラブ
デ－ミキエリス，ルカ
ビターレ，ボルフガング・アマデウス
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Hitachi Energy Ltd
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Hitachi Energy Ltd
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Publication of JP2024525829A publication Critical patent/JP2024525829A/ja
Publication of JP2024525829A5 publication Critical patent/JP2024525829A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2024502155A 2021-07-16 2022-07-13 製造方法およびパワー半導体デバイス Pending JP2024525829A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186114.1A EP4120357A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186114.1 2021-07-16
PCT/EP2022/069647 WO2023285557A1 (en) 2021-07-16 2022-07-13 Production method and power semiconductor device

Publications (2)

Publication Number Publication Date
JP2024525829A true JP2024525829A (ja) 2024-07-12
JP2024525829A5 JP2024525829A5 (https=) 2025-07-01

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JP2024502155A Pending JP2024525829A (ja) 2021-07-16 2022-07-13 製造方法およびパワー半導体デバイス

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EP (1) EP4120357A1 (https=)
JP (1) JP2024525829A (https=)
CN (1) CN117693819A (https=)
DE (1) DE212022000254U1 (https=)
WO (1) WO2023285557A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118486734A (zh) * 2024-05-31 2024-08-13 合肥艾创微电子科技有限公司 碳化硅沟槽栅金属氧化物半导体场效应晶体管及制备方法
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
EP1407476A4 (en) 2000-08-08 2007-08-29 Advanced Power Technology POWER MOS MODULE WITH ASYMMETRIC CHANNEL STRUCTURE
US6573561B1 (en) 2002-03-11 2003-06-03 International Business Machines Corporation Vertical MOSFET with asymmetrically graded channel doping
TWI222685B (en) * 2003-12-18 2004-10-21 Episil Technologies Inc Metal oxide semiconductor device and fabricating method thereof
US8067797B2 (en) 2007-10-17 2011-11-29 International Rectifier Corporation Variable threshold trench IGBT with offset emitter contacts
WO2010001201A1 (en) * 2008-06-30 2010-01-07 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
US11031461B2 (en) * 2019-08-25 2021-06-08 Genesic Semiconductor Inc. Manufacture of robust, high-performance devices
US11309413B2 (en) * 2019-10-10 2022-04-19 Wolfspeed, Inc. Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

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DE212022000254U1 (de) 2024-04-15
EP4120357A1 (en) 2023-01-18
CN117693819A (zh) 2024-03-12
WO2023285557A1 (en) 2023-01-19

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