DE212022000254U1 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung Download PDF

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Publication number
DE212022000254U1
DE212022000254U1 DE212022000254.7U DE212022000254U DE212022000254U1 DE 212022000254 U1 DE212022000254 U1 DE 212022000254U1 DE 212022000254 U DE212022000254 U DE 212022000254U DE 212022000254 U1 DE212022000254 U1 DE 212022000254U1
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DE
Germany
Prior art keywords
region
semiconductor device
channel
power semiconductor
gate insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE212022000254.7U
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German (de)
English (en)
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Hitachi Energy Ltd
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Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of DE212022000254U1 publication Critical patent/DE212022000254U1/de
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
DE212022000254.7U 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung Active DE212022000254U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186114.1A EP4120357A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186114.1 2021-07-16
PCT/EP2022/069647 WO2023285557A1 (en) 2021-07-16 2022-07-13 Production method and power semiconductor device

Publications (1)

Publication Number Publication Date
DE212022000254U1 true DE212022000254U1 (de) 2024-04-15

Family

ID=76958812

Family Applications (1)

Application Number Title Priority Date Filing Date
DE212022000254.7U Active DE212022000254U1 (de) 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung

Country Status (5)

Country Link
EP (1) EP4120357A1 (https=)
JP (1) JP2024525829A (https=)
CN (1) CN117693819A (https=)
DE (1) DE212022000254U1 (https=)
WO (1) WO2023285557A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118486734A (zh) * 2024-05-31 2024-08-13 合肥艾创微电子科技有限公司 碳化硅沟槽栅金属氧化物半导体场效应晶体管及制备方法
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573561B1 (en) 2002-03-11 2003-06-03 International Business Machines Corporation Vertical MOSFET with asymmetrically graded channel doping
US6664594B2 (en) 2000-08-08 2003-12-16 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
US20050133833A1 (en) 2003-12-18 2005-06-23 Bing-Yue Tsui Metal oxide semiconductor device and fabricating method thereof
US8067797B2 (en) 2007-10-17 2011-11-29 International Rectifier Corporation Variable threshold trench IGBT with offset emitter contacts
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20210111279A1 (en) 2019-10-10 2021-04-15 Cree, Inc. Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
WO2010001201A1 (en) * 2008-06-30 2010-01-07 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
US11031461B2 (en) * 2019-08-25 2021-06-08 Genesic Semiconductor Inc. Manufacture of robust, high-performance devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664594B2 (en) 2000-08-08 2003-12-16 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
US6573561B1 (en) 2002-03-11 2003-06-03 International Business Machines Corporation Vertical MOSFET with asymmetrically graded channel doping
US20050133833A1 (en) 2003-12-18 2005-06-23 Bing-Yue Tsui Metal oxide semiconductor device and fabricating method thereof
US8067797B2 (en) 2007-10-17 2011-11-29 International Rectifier Corporation Variable threshold trench IGBT with offset emitter contacts
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20210111279A1 (en) 2019-10-10 2021-04-15 Cree, Inc. Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

Also Published As

Publication number Publication date
JP2024525829A (ja) 2024-07-12
EP4120357A1 (en) 2023-01-18
CN117693819A (zh) 2024-03-12
WO2023285557A1 (en) 2023-01-19

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