JP2024526794A5 - - Google Patents
Info
- Publication number
- JP2024526794A5 JP2024526794A5 JP2024502186A JP2024502186A JP2024526794A5 JP 2024526794 A5 JP2024526794 A5 JP 2024526794A5 JP 2024502186 A JP2024502186 A JP 2024502186A JP 2024502186 A JP2024502186 A JP 2024502186A JP 2024526794 A5 JP2024526794 A5 JP 2024526794A5
- Authority
- JP
- Japan
- Prior art keywords
- uniform
- profile
- semiconductor device
- power semiconductor
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21186101.8 | 2021-07-16 | ||
| EP21186101.8A EP4120361A1 (en) | 2021-07-16 | 2021-07-16 | Power semiconductor device |
| PCT/EP2022/069636 WO2023285549A1 (en) | 2021-07-16 | 2022-07-13 | Power semiconductor device and production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024526794A JP2024526794A (ja) | 2024-07-19 |
| JP2024526794A5 true JP2024526794A5 (https=) | 2025-07-16 |
Family
ID=76958805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502186A Pending JP2024526794A (ja) | 2021-07-16 | 2022-07-13 | パワー半導体デバイスおよび製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4120361A1 (https=) |
| JP (1) | JP2024526794A (https=) |
| CN (1) | CN117642872A (https=) |
| DE (1) | DE212022000250U1 (https=) |
| WO (1) | WO2023285549A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
| US6653698B2 (en) | 2001-12-20 | 2003-11-25 | International Business Machines Corporation | Integration of dual workfunction metal gate CMOS devices |
| US6794234B2 (en) | 2002-01-30 | 2004-09-21 | The Regents Of The University Of California | Dual work function CMOS gate technology based on metal interdiffusion |
| WO2010001201A1 (en) * | 2008-06-30 | 2010-01-07 | Freescale Semiconductor, Inc. | Method of forming a power semiconductor device and power semiconductor device |
| DE102011079747A1 (de) * | 2010-07-27 | 2012-02-02 | Denso Corporation | Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür |
| JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
| KR20150090669A (ko) * | 2014-01-29 | 2015-08-06 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
| JP2016054181A (ja) * | 2014-09-03 | 2016-04-14 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
| US9583485B2 (en) | 2015-05-15 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same |
-
2021
- 2021-07-16 EP EP21186101.8A patent/EP4120361A1/en active Pending
-
2022
- 2022-07-13 DE DE212022000250.4U patent/DE212022000250U1/de active Active
- 2022-07-13 CN CN202280050080.4A patent/CN117642872A/zh active Pending
- 2022-07-13 WO PCT/EP2022/069636 patent/WO2023285549A1/en not_active Ceased
- 2022-07-13 JP JP2024502186A patent/JP2024526794A/ja active Pending
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