DE212022000250U1 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung Download PDF

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Publication number
DE212022000250U1
DE212022000250U1 DE212022000250.4U DE212022000250U DE212022000250U1 DE 212022000250 U1 DE212022000250 U1 DE 212022000250U1 DE 212022000250 U DE212022000250 U DE 212022000250U DE 212022000250 U1 DE212022000250 U1 DE 212022000250U1
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Germany
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region
channel region
channel
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DE212022000250.4U
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German (de)
English (en)
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Hitachi Energy Ltd
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Hitachi Energy Ltd
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Publication of DE212022000250U1 publication Critical patent/DE212022000250U1/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

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  • Electrodes Of Semiconductors (AREA)
DE212022000250.4U 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung Active DE212022000250U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186101.8 2021-07-16
EP21186101.8A EP4120361A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
PCT/EP2022/069636 WO2023285549A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (1)

Publication Number Publication Date
DE212022000250U1 true DE212022000250U1 (de) 2024-04-15

Family

ID=76958805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE212022000250.4U Active DE212022000250U1 (de) 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung

Country Status (5)

Country Link
EP (1) EP4120361A1 (https=)
JP (1) JP2024526794A (https=)
CN (1) CN117642872A (https=)
DE (1) DE212022000250U1 (https=)
WO (1) WO2023285549A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1248300A2 (en) 2001-04-02 2002-10-09 Schindengen Electric Manufacturing Co., Ltd. Power MOSFET having a trench gate electrode and method of making the same
US6653698B2 (en) 2001-12-20 2003-11-25 International Business Machines Corporation Integration of dual workfunction metal gate CMOS devices
US7141858B2 (en) 2002-01-30 2006-11-28 The Regents Of The University Of California Dual work function CMOS gate technology based on metal interdiffusion
US20120025874A1 (en) 2010-07-27 2012-02-02 Denso Corporation Semiconductor device having switching element and free wheel diode and method for controlling the same
US20150214362A1 (en) 2014-01-29 2015-07-30 SK Hynix Inc. Dual work function buried gate type transistor and method for fabricating the same
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20160104794A1 (en) 2013-06-05 2016-04-14 Denso Corporation Silicon carbide semiconductor device and method for manufacturing same
US10468407B2 (en) 2015-05-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001201A1 (en) * 2008-06-30 2010-01-07 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1248300A2 (en) 2001-04-02 2002-10-09 Schindengen Electric Manufacturing Co., Ltd. Power MOSFET having a trench gate electrode and method of making the same
US6653698B2 (en) 2001-12-20 2003-11-25 International Business Machines Corporation Integration of dual workfunction metal gate CMOS devices
US7141858B2 (en) 2002-01-30 2006-11-28 The Regents Of The University Of California Dual work function CMOS gate technology based on metal interdiffusion
US20120025874A1 (en) 2010-07-27 2012-02-02 Denso Corporation Semiconductor device having switching element and free wheel diode and method for controlling the same
US20160104794A1 (en) 2013-06-05 2016-04-14 Denso Corporation Silicon carbide semiconductor device and method for manufacturing same
US20150214362A1 (en) 2014-01-29 2015-07-30 SK Hynix Inc. Dual work function buried gate type transistor and method for fabricating the same
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US10468407B2 (en) 2015-05-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure

Also Published As

Publication number Publication date
JP2024526794A (ja) 2024-07-19
CN117642872A (zh) 2024-03-01
EP4120361A1 (en) 2023-01-18
WO2023285549A1 (en) 2023-01-19

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