JP2024514601A5 - - Google Patents

Info

Publication number
JP2024514601A5
JP2024514601A5 JP2023562736A JP2023562736A JP2024514601A5 JP 2024514601 A5 JP2024514601 A5 JP 2024514601A5 JP 2023562736 A JP2023562736 A JP 2023562736A JP 2023562736 A JP2023562736 A JP 2023562736A JP 2024514601 A5 JP2024514601 A5 JP 2024514601A5
Authority
JP
Japan
Prior art keywords
rdl
substrate
layer
interconnections
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023562736A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024514601A (ja
Filing date
Publication date
Priority claimed from US17/237,828 external-priority patent/US12218041B2/en
Application filed filed Critical
Publication of JP2024514601A publication Critical patent/JP2024514601A/ja
Publication of JP2024514601A5 publication Critical patent/JP2024514601A5/ja
Pending legal-status Critical Current

Links

JP2023562736A 2021-04-22 2022-04-08 集積回路(ic)チップをパッケージ基板にインターフェースするためのキャパシタ埋込み、再配線層(rdl)基板を採用するicパッケージ、および関係する方法 Pending JP2024514601A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/237,828 2021-04-22
US17/237,828 US12218041B2 (en) 2021-04-22 2021-04-22 Integrated circuit (IC) packages employing a capacitor-embedded, redistribution layer (RDL) substrate for interfacing an IC chip(s) to a package substrate, and related methods
PCT/US2022/071621 WO2022226465A1 (en) 2021-04-22 2022-04-08 Integrated circuit (ic) packages employing a capacitor-embedded, redistribution layer (rdl) substrate for interfacing an ic chip(s) to a package substrate, and related methods

Publications (2)

Publication Number Publication Date
JP2024514601A JP2024514601A (ja) 2024-04-02
JP2024514601A5 true JP2024514601A5 (enExample) 2025-03-31

Family

ID=81392673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023562736A Pending JP2024514601A (ja) 2021-04-22 2022-04-08 集積回路(ic)チップをパッケージ基板にインターフェースするためのキャパシタ埋込み、再配線層(rdl)基板を採用するicパッケージ、および関係する方法

Country Status (8)

Country Link
US (2) US12218041B2 (enExample)
EP (1) EP4327361A1 (enExample)
JP (1) JP2024514601A (enExample)
KR (1) KR20240000470A (enExample)
CN (1) CN117043943A (enExample)
BR (1) BR112023021017A2 (enExample)
TW (1) TW202247306A (enExample)
WO (1) WO2022226465A1 (enExample)

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TWI806490B (zh) * 2022-03-14 2023-06-21 巨擘科技股份有限公司 封裝基板結構
US20240079352A1 (en) * 2022-09-02 2024-03-07 Qualcomm Incorporated Integrated circuit (ic) packages employing capacitor interposer substrate with aligned external interconnects, and related fabrication methods
US20240113073A1 (en) * 2022-09-29 2024-04-04 Intel Corporation Side of a die that is coplanar with a side of a molding
US20240145447A1 (en) * 2022-10-28 2024-05-02 Psemi Corporation Integration of Discrete Embeddable Capacitors on Integrated Circuit Chips
CN120727696B (zh) * 2025-09-01 2026-01-13 浙江大学 一种正交堆叠的双面冷却功率模块及其制备方法

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EP0646954A3 (en) * 1993-09-29 1997-08-27 Fujitsu Ltd One-step etching process with minor defects.
JP2005039243A (ja) 2003-06-24 2005-02-10 Ngk Spark Plug Co Ltd 中間基板
JP2005327984A (ja) * 2004-05-17 2005-11-24 Shinko Electric Ind Co Ltd 電子部品及び電子部品実装構造の製造方法
US8362599B2 (en) 2009-09-24 2013-01-29 Qualcomm Incorporated Forming radio frequency integrated circuits
JP5429019B2 (ja) 2010-04-16 2014-02-26 富士通株式会社 キャパシタ及びその製造方法
US8748284B2 (en) 2011-08-12 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing decoupling MIM capacitor designs for interposers
US9478474B2 (en) 2012-12-28 2016-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for forming package-on-packages
US9275955B2 (en) * 2013-12-18 2016-03-01 Intel Corporation Integrated circuit package with embedded bridge
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US10763239B2 (en) * 2017-10-27 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-chip wafer level packages and methods of forming the same
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CN110634750A (zh) * 2018-06-22 2019-12-31 台湾积体电路制造股份有限公司 半导体装置及其制造方法
US10879183B2 (en) * 2018-06-22 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
KR102595865B1 (ko) 2019-03-04 2023-10-30 삼성전자주식회사 하이브리드 인터포저를 갖는 반도체 패키지
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