TW202247306A - 採用電容器嵌入式重分佈層(rdl)基板以將(諸)ic晶片對接到封裝基板的積體電路(ic)封裝以及相關方法 - Google Patents
採用電容器嵌入式重分佈層(rdl)基板以將(諸)ic晶片對接到封裝基板的積體電路(ic)封裝以及相關方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/495—Capacitive arrangements or effects of, or between wiring layers
- H10W20/496—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/652—Cross-sectional shapes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/237,828 | 2021-04-22 | ||
| US17/237,828 US12218041B2 (en) | 2021-04-22 | 2021-04-22 | Integrated circuit (IC) packages employing a capacitor-embedded, redistribution layer (RDL) substrate for interfacing an IC chip(s) to a package substrate, and related methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202247306A true TW202247306A (zh) | 2022-12-01 |
Family
ID=81392673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111113425A TW202247306A (zh) | 2021-04-22 | 2022-04-08 | 採用電容器嵌入式重分佈層(rdl)基板以將(諸)ic晶片對接到封裝基板的積體電路(ic)封裝以及相關方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US12218041B2 (enExample) |
| EP (1) | EP4327361A1 (enExample) |
| JP (1) | JP2024514601A (enExample) |
| KR (1) | KR20240000470A (enExample) |
| CN (1) | CN117043943A (enExample) |
| BR (1) | BR112023021017A2 (enExample) |
| TW (1) | TW202247306A (enExample) |
| WO (1) | WO2022226465A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI806490B (zh) * | 2022-03-14 | 2023-06-21 | 巨擘科技股份有限公司 | 封裝基板結構 |
| US20240079352A1 (en) * | 2022-09-02 | 2024-03-07 | Qualcomm Incorporated | Integrated circuit (ic) packages employing capacitor interposer substrate with aligned external interconnects, and related fabrication methods |
| US20240113073A1 (en) * | 2022-09-29 | 2024-04-04 | Intel Corporation | Side of a die that is coplanar with a side of a molding |
| US20240145447A1 (en) * | 2022-10-28 | 2024-05-02 | Psemi Corporation | Integration of Discrete Embeddable Capacitors on Integrated Circuit Chips |
| CN120727696B (zh) * | 2025-09-01 | 2026-01-13 | 浙江大学 | 一种正交堆叠的双面冷却功率模块及其制备方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0646954A3 (en) * | 1993-09-29 | 1997-08-27 | Fujitsu Ltd | One-step etching process with minor defects. |
| JP2005039243A (ja) | 2003-06-24 | 2005-02-10 | Ngk Spark Plug Co Ltd | 中間基板 |
| JP2005327984A (ja) * | 2004-05-17 | 2005-11-24 | Shinko Electric Ind Co Ltd | 電子部品及び電子部品実装構造の製造方法 |
| US8362599B2 (en) | 2009-09-24 | 2013-01-29 | Qualcomm Incorporated | Forming radio frequency integrated circuits |
| JP5429019B2 (ja) | 2010-04-16 | 2014-02-26 | 富士通株式会社 | キャパシタ及びその製造方法 |
| US8748284B2 (en) | 2011-08-12 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing decoupling MIM capacitor designs for interposers |
| US9478474B2 (en) | 2012-12-28 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for forming package-on-packages |
| US9275955B2 (en) * | 2013-12-18 | 2016-03-01 | Intel Corporation | Integrated circuit package with embedded bridge |
| US9935052B1 (en) | 2014-11-26 | 2018-04-03 | Altera Corporation | Power line layout in integrated circuits |
| US9859258B2 (en) | 2016-05-17 | 2018-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| CN109314095B (zh) * | 2017-04-10 | 2023-07-21 | 默升科技集团有限公司 | 笼式屏蔽中介层电感 |
| US10763239B2 (en) * | 2017-10-27 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-chip wafer level packages and methods of forming the same |
| US10535636B2 (en) | 2017-11-15 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrating passive devices in package structures |
| CN110634750A (zh) * | 2018-06-22 | 2019-12-31 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
| US10879183B2 (en) * | 2018-06-22 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| KR102595865B1 (ko) | 2019-03-04 | 2023-10-30 | 삼성전자주식회사 | 하이브리드 인터포저를 갖는 반도체 패키지 |
| US11063013B2 (en) | 2019-05-15 | 2021-07-13 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure |
| US12341129B2 (en) * | 2019-06-13 | 2025-06-24 | Intel Corporation | Substrateless double-sided embedded multi-die interconnect bridge |
| TWI725452B (zh) | 2019-06-20 | 2021-04-21 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
| US11133258B2 (en) * | 2019-07-17 | 2021-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package with bridge die for interconnection and method forming same |
| US11854984B2 (en) * | 2019-09-25 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
| US12439616B2 (en) * | 2021-03-26 | 2025-10-07 | Intel Corporation | Integrated circuit package redistribution layers with metal-insulator-metal (MIM) capacitors |
-
2021
- 2021-04-22 US US17/237,828 patent/US12218041B2/en active Active
-
2022
- 2022-04-08 JP JP2023562736A patent/JP2024514601A/ja active Pending
- 2022-04-08 BR BR112023021017A patent/BR112023021017A2/pt unknown
- 2022-04-08 KR KR1020237034940A patent/KR20240000470A/ko active Pending
- 2022-04-08 EP EP22719765.4A patent/EP4327361A1/en active Pending
- 2022-04-08 CN CN202280022414.7A patent/CN117043943A/zh active Pending
- 2022-04-08 WO PCT/US2022/071621 patent/WO2022226465A1/en not_active Ceased
- 2022-04-08 TW TW111113425A patent/TW202247306A/zh unknown
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2024
- 2024-12-19 US US18/987,457 patent/US20250118645A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022226465A1 (en) | 2022-10-27 |
| US20220344250A1 (en) | 2022-10-27 |
| US20250118645A1 (en) | 2025-04-10 |
| JP2024514601A (ja) | 2024-04-02 |
| CN117043943A (zh) | 2023-11-10 |
| EP4327361A1 (en) | 2024-02-28 |
| KR20240000470A (ko) | 2024-01-02 |
| BR112023021017A2 (pt) | 2023-12-19 |
| US12218041B2 (en) | 2025-02-04 |
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