JP2024506950A5 - - Google Patents
Info
- Publication number
- JP2024506950A5 JP2024506950A5 JP2023549864A JP2023549864A JP2024506950A5 JP 2024506950 A5 JP2024506950 A5 JP 2024506950A5 JP 2023549864 A JP2023549864 A JP 2023549864A JP 2023549864 A JP2023549864 A JP 2023549864A JP 2024506950 A5 JP2024506950 A5 JP 2024506950A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- surface modification
- phase
- complex
- liquid solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163151579P | 2021-02-19 | 2021-02-19 | |
| US63/151,579 | 2021-02-19 | ||
| US17/580,879 US12444610B2 (en) | 2018-11-15 | 2022-01-21 | Methods for etching a substrate using a hybrid wet atomic layer etching process |
| US17/580,879 | 2022-01-21 | ||
| PCT/US2022/014540 WO2022177727A1 (en) | 2021-02-19 | 2022-01-31 | Methods for etching a substrate using a hybrid wet atomic layer etching process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024506950A JP2024506950A (ja) | 2024-02-15 |
| JP2024506950A5 true JP2024506950A5 (https=) | 2025-01-30 |
| JP7827394B2 JP7827394B2 (ja) | 2026-03-10 |
Family
ID=82931928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023549864A Active JP7827394B2 (ja) | 2021-02-19 | 2022-01-31 | ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7827394B2 (https=) |
| KR (1) | KR102941905B1 (https=) |
| WO (1) | WO2022177727A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3768802B2 (ja) * | 1999-11-01 | 2006-04-19 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| KR100677965B1 (ko) * | 1999-11-01 | 2007-02-01 | 동경 엘렉트론 주식회사 | 기판처리방법 및 기판처리장치 |
| JP4606793B2 (ja) * | 2004-07-01 | 2011-01-05 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| US9984858B2 (en) * | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| TWI658512B (zh) * | 2016-02-23 | 2019-05-01 | Tokyo Electron Limited | 原子層蝕刻用方法與系統 |
| US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US10982335B2 (en) * | 2018-11-15 | 2021-04-20 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
| US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
-
2022
- 2022-01-31 JP JP2023549864A patent/JP7827394B2/ja active Active
- 2022-01-31 WO PCT/US2022/014540 patent/WO2022177727A1/en not_active Ceased
- 2022-01-31 KR KR1020237026849A patent/KR102941905B1/ko active Active
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