JP7827394B2 - ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 - Google Patents

ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法

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Publication number
JP7827394B2
JP7827394B2 JP2023549864A JP2023549864A JP7827394B2 JP 7827394 B2 JP7827394 B2 JP 7827394B2 JP 2023549864 A JP2023549864 A JP 2023549864A JP 2023549864 A JP2023549864 A JP 2023549864A JP 7827394 B2 JP7827394 B2 JP 7827394B2
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JP
Japan
Prior art keywords
substrate
phase
layer
liquid
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023549864A
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English (en)
Japanese (ja)
Other versions
JP2024506950A5 (https=
JP2024506950A (ja
Inventor
アベル，ポール
ファゲ，ジャックス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/580,879 external-priority patent/US12444610B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2024506950A publication Critical patent/JP2024506950A/ja
Publication of JP2024506950A5 publication Critical patent/JP2024506950A5/ja
Application granted granted Critical
Publication of JP7827394B2 publication Critical patent/JP7827394B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP2023549864A 2021-02-19 2022-01-31 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 Active JP7827394B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163151579P 2021-02-19 2021-02-19
US63/151,579 2021-02-19
US17/580,879 US12444610B2 (en) 2018-11-15 2022-01-21 Methods for etching a substrate using a hybrid wet atomic layer etching process
US17/580,879 2022-01-21
PCT/US2022/014540 WO2022177727A1 (en) 2021-02-19 2022-01-31 Methods for etching a substrate using a hybrid wet atomic layer etching process

Publications (3)

Publication Number Publication Date
JP2024506950A JP2024506950A (ja) 2024-02-15
JP2024506950A5 JP2024506950A5 (https=) 2025-01-30
JP7827394B2 true JP7827394B2 (ja) 2026-03-10

Family

ID=82931928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023549864A Active JP7827394B2 (ja) 2021-02-19 2022-01-31 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法

Country Status (3)

Country Link
JP (1) JP7827394B2 (https=)
KR (1) KR102941905B1 (https=)
WO (1) WO2022177727A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203181A (ja) 1999-11-01 2001-07-27 Tokyo Electron Ltd 基板処理方法および基板処理装置
JP2006019523A (ja) 2004-07-01 2006-01-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20200157693A1 (en) 2018-11-15 2020-05-21 Tokyo Electron Limited Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100677965B1 (ko) * 1999-11-01 2007-02-01 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
TWI658512B (zh) * 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203181A (ja) 1999-11-01 2001-07-27 Tokyo Electron Ltd 基板処理方法および基板処理装置
JP2006019523A (ja) 2004-07-01 2006-01-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20200157693A1 (en) 2018-11-15 2020-05-21 Tokyo Electron Limited Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions

Also Published As

Publication number Publication date
TW202247251A (zh) 2022-12-01
WO2022177727A1 (en) 2022-08-25
KR102941905B1 (ko) 2026-03-19
KR20230145342A (ko) 2023-10-17
JP2024506950A (ja) 2024-02-15

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