KR102941905B1 - 하이브리드 습식 원자층 에칭 공정을 사용하여 기판을 에칭하는 방법 - Google Patents

하이브리드 습식 원자층 에칭 공정을 사용하여 기판을 에칭하는 방법

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Publication number
KR102941905B1
KR102941905B1 KR1020237026849A KR20237026849A KR102941905B1 KR 102941905 B1 KR102941905 B1 KR 102941905B1 KR 1020237026849 A KR1020237026849 A KR 1020237026849A KR 20237026849 A KR20237026849 A KR 20237026849A KR 102941905 B1 KR102941905 B1 KR 102941905B1
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South Korea
Prior art keywords
substrate
etching
layer
self
limiting
Prior art date
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Application number
KR1020237026849A
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English (en)
Korean (ko)
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KR20230145342A (ko
Inventor
폴 아벨
자크 파게
Original Assignee
도쿄엘렉트론가부시키가이샤
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Priority claimed from US17/580,879 external-priority patent/US12444610B2/en
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20230145342A publication Critical patent/KR20230145342A/ko
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Publication of KR102941905B1 publication Critical patent/KR102941905B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
KR1020237026849A 2021-02-19 2022-01-31 하이브리드 습식 원자층 에칭 공정을 사용하여 기판을 에칭하는 방법 Active KR102941905B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163151579P 2021-02-19 2021-02-19
US63/151,579 2021-02-19
US17/580,879 US12444610B2 (en) 2018-11-15 2022-01-21 Methods for etching a substrate using a hybrid wet atomic layer etching process
US17/580,879 2022-01-21
PCT/US2022/014540 WO2022177727A1 (en) 2021-02-19 2022-01-31 Methods for etching a substrate using a hybrid wet atomic layer etching process

Publications (2)

Publication Number Publication Date
KR20230145342A KR20230145342A (ko) 2023-10-17
KR102941905B1 true KR102941905B1 (ko) 2026-03-19

Family

ID=82931928

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237026849A Active KR102941905B1 (ko) 2021-02-19 2022-01-31 하이브리드 습식 원자층 에칭 공정을 사용하여 기판을 에칭하는 방법

Country Status (3)

Country Link
JP (1) JP7827394B2 (https=)
KR (1) KR102941905B1 (https=)
WO (1) WO2022177727A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200157693A1 (en) 2018-11-15 2020-05-21 Tokyo Electron Limited Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions
US20200161148A1 (en) * 2018-11-15 2020-05-21 Tokyo Electron Limited Processing System and Platform for Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3768802B2 (ja) * 1999-11-01 2006-04-19 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR100677965B1 (ko) * 1999-11-01 2007-02-01 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
JP4606793B2 (ja) * 2004-07-01 2011-01-05 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
TWI658512B (zh) * 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200157693A1 (en) 2018-11-15 2020-05-21 Tokyo Electron Limited Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions
US20200161148A1 (en) * 2018-11-15 2020-05-21 Tokyo Electron Limited Processing System and Platform for Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions
WO2020102655A1 (en) * 2018-11-15 2020-05-22 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions

Also Published As

Publication number Publication date
TW202247251A (zh) 2022-12-01
WO2022177727A1 (en) 2022-08-25
JP7827394B2 (ja) 2026-03-10
KR20230145342A (ko) 2023-10-17
JP2024506950A (ja) 2024-02-15

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