JP2022507521A5 - - Google Patents
Info
- Publication number
- JP2022507521A5 JP2022507521A5 JP2021526545A JP2021526545A JP2022507521A5 JP 2022507521 A5 JP2022507521 A5 JP 2022507521A5 JP 2021526545 A JP2021526545 A JP 2021526545A JP 2021526545 A JP2021526545 A JP 2021526545A JP 2022507521 A5 JP2022507521 A5 JP 2022507521A5
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline material
- substrate
- surface layer
- exposing
- modified surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862767808P | 2018-11-15 | 2018-11-15 | |
| US62/767,808 | 2018-11-15 | ||
| US16/287,658 | 2019-02-27 | ||
| US16/287,658 US10982335B2 (en) | 2018-11-15 | 2019-02-27 | Wet atomic layer etching using self-limiting and solubility-limited reactions |
| PCT/US2019/061678 WO2020102655A1 (en) | 2018-11-15 | 2019-11-15 | Wet atomic layer etching using self-limiting and solubility-limited reactions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022507521A JP2022507521A (ja) | 2022-01-18 |
| JP2022507521A5 true JP2022507521A5 (https=) | 2022-11-21 |
| JP7454774B2 JP7454774B2 (ja) | 2024-03-25 |
Family
ID=70727361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526545A Active JP7454774B2 (ja) | 2018-11-15 | 2019-11-15 | 自己律速型で有限溶解度の反応を使用した湿式原子層エッチング |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10982335B2 (https=) |
| JP (1) | JP7454774B2 (https=) |
| KR (1) | KR102694693B1 (https=) |
| CN (1) | CN113016056B (https=) |
| SG (1) | SG11202104345PA (https=) |
| TW (1) | TWI815995B (https=) |
| WO (1) | WO2020102655A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444610B2 (en) | 2018-11-15 | 2025-10-14 | Tokyo Electron Limited | Methods for etching a substrate using a hybrid wet atomic layer etching process |
| US12243752B2 (en) | 2018-11-15 | 2025-03-04 | Tokyo Electron Limited | Systems for etching a substrate using a hybrid wet atomic layer etching process |
| JP7202230B2 (ja) * | 2019-03-20 | 2023-01-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN113161259B (zh) * | 2020-01-23 | 2025-08-12 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法和化学溶液 |
| WO2022138561A1 (ja) * | 2020-12-25 | 2022-06-30 | 株式会社トクヤマ | 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液 |
| US11915941B2 (en) * | 2021-02-11 | 2024-02-27 | Tokyo Electron Limited | Dynamically adjusted purge timing in wet atomic layer etching |
| JP7827394B2 (ja) * | 2021-02-19 | 2026-03-10 | 東京エレクトロン株式会社 | ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 |
| CN117545711A (zh) * | 2021-04-20 | 2024-02-09 | 奇跃公司 | 超声处理纳米几何形状控制过程和方法 |
| US12506014B2 (en) | 2021-10-19 | 2025-12-23 | Tokyo Electron Limited | Methods for non-isothermal wet atomic layer etching |
| US12276033B2 (en) | 2021-10-19 | 2025-04-15 | Tokyo Electron Limited | Methods for wet etching of noble metals |
| US11802342B2 (en) * | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
| US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
| US12237166B2 (en) * | 2022-06-13 | 2025-02-25 | Tokyo Electron Limited | Methods for selective removal of surface oxides on metal films |
| US12604691B2 (en) | 2023-08-30 | 2026-04-14 | Tokyo Electron Limited | Methods for wet atomic layer etching of molybdenum in aqueous solution |
| US12463050B2 (en) | 2023-08-30 | 2025-11-04 | Tokyo Electron Limited | Methods for wet atomic layer etching of molybdenum |
| US12506011B2 (en) | 2023-12-15 | 2025-12-23 | Tokyo Electron Limited | Methods for wet atomic layer etching of transition metal oxide dielectric materials |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374328A (en) * | 1993-03-25 | 1994-12-20 | Watkins Johnson Company | Method of fabricating group III-V compound |
| AT410043B (de) | 1997-09-30 | 2003-01-27 | Sez Ag | Verfahren zum planarisieren von halbleitersubstraten |
| JPH11251599A (ja) * | 1998-03-06 | 1999-09-17 | Toshiba Corp | 薄膜半導体装置の製造方法 |
| US6335294B1 (en) * | 1999-04-22 | 2002-01-01 | International Business Machines Corporation | Wet cleans for cobalt disilicide processing |
| TW466728B (en) * | 1999-05-21 | 2001-12-01 | Cfmt Inc | Methods for wet processing electronic components having copper containing surfaces |
| US20040061092A1 (en) * | 2002-09-30 | 2004-04-01 | Seagate Technology Llc | Wet etch for selective removal of alumina |
| DE10328845B4 (de) * | 2003-06-26 | 2005-10-20 | Siltronic Ag | Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe |
| US7531463B2 (en) * | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| JP4544425B2 (ja) * | 2005-06-29 | 2010-09-15 | 信越化学工業株式会社 | 希土類金属部材の製造方法 |
| US7795148B2 (en) * | 2006-03-28 | 2010-09-14 | Tokyo Electron Limited | Method for removing damaged dielectric material |
| US7776741B2 (en) * | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
| US20110094888A1 (en) * | 2009-10-26 | 2011-04-28 | Headway Technologies, Inc. | Rejuvenation method for ruthenium plating seed |
| TWI605107B (zh) | 2011-08-22 | 2017-11-11 | 1366科技公司 | 用於酸性溼式化學蝕刻矽晶片之調配物 |
| US10828680B2 (en) * | 2013-11-11 | 2020-11-10 | Tokyo Electron Limited | System and method for enhanced removal of metal hardmask using ultra violet treatment |
| US9385197B2 (en) * | 2014-08-29 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Semiconductor structure with contact over source/drain structure and method for forming the same |
| US9870899B2 (en) * | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US9449843B1 (en) * | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
| KR102437717B1 (ko) * | 2015-06-17 | 2022-08-29 | 인텔 코포레이션 | 디바이스 제조를 위한 산화물 층들의 원자 층 제거에 의한 전이 금속 건식 에칭 |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| WO2018004649A1 (en) | 2016-07-01 | 2018-01-04 | Intel Corporation | Systems, methods and devices for etching control |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10208383B2 (en) * | 2017-02-09 | 2019-02-19 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination |
| JP7034645B2 (ja) | 2017-09-22 | 2022-03-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
-
2019
- 2019-02-27 US US16/287,658 patent/US10982335B2/en active Active
- 2019-11-15 JP JP2021526545A patent/JP7454774B2/ja active Active
- 2019-11-15 WO PCT/US2019/061678 patent/WO2020102655A1/en not_active Ceased
- 2019-11-15 KR KR1020217017191A patent/KR102694693B1/ko active Active
- 2019-11-15 CN CN201980074921.3A patent/CN113016056B/zh active Active
- 2019-11-15 TW TW108141566A patent/TWI815995B/zh active
- 2019-11-15 SG SG11202104345PA patent/SG11202104345PA/en unknown
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