CN113016056B - 使用自限制和溶解度受限反应的原子层湿法蚀刻 - Google Patents

使用自限制和溶解度受限反应的原子层湿法蚀刻 Download PDF

Info

Publication number
CN113016056B
CN113016056B CN201980074921.3A CN201980074921A CN113016056B CN 113016056 B CN113016056 B CN 113016056B CN 201980074921 A CN201980074921 A CN 201980074921A CN 113016056 B CN113016056 B CN 113016056B
Authority
CN
China
Prior art keywords
substrate
etching
polycrystalline material
surface layer
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980074921.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN113016056A (zh
Inventor
保罗·阿贝尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113016056A publication Critical patent/CN113016056A/zh
Application granted granted Critical
Publication of CN113016056B publication Critical patent/CN113016056B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN201980074921.3A 2018-11-15 2019-11-15 使用自限制和溶解度受限反应的原子层湿法蚀刻 Active CN113016056B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862767808P 2018-11-15 2018-11-15
US62/767,808 2018-11-15
US16/287,658 2019-02-27
US16/287,658 US10982335B2 (en) 2018-11-15 2019-02-27 Wet atomic layer etching using self-limiting and solubility-limited reactions
PCT/US2019/061678 WO2020102655A1 (en) 2018-11-15 2019-11-15 Wet atomic layer etching using self-limiting and solubility-limited reactions

Publications (2)

Publication Number Publication Date
CN113016056A CN113016056A (zh) 2021-06-22
CN113016056B true CN113016056B (zh) 2024-10-18

Family

ID=70727361

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980074921.3A Active CN113016056B (zh) 2018-11-15 2019-11-15 使用自限制和溶解度受限反应的原子层湿法蚀刻

Country Status (7)

Country Link
US (1) US10982335B2 (https=)
JP (1) JP7454774B2 (https=)
KR (1) KR102694693B1 (https=)
CN (1) CN113016056B (https=)
SG (1) SG11202104345PA (https=)
TW (1) TWI815995B (https=)
WO (1) WO2020102655A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444610B2 (en) 2018-11-15 2025-10-14 Tokyo Electron Limited Methods for etching a substrate using a hybrid wet atomic layer etching process
US12243752B2 (en) 2018-11-15 2025-03-04 Tokyo Electron Limited Systems for etching a substrate using a hybrid wet atomic layer etching process
JP7202230B2 (ja) * 2019-03-20 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN113161259B (zh) * 2020-01-23 2025-08-12 东京毅力科创株式会社 基板处理装置、基板处理方法和化学溶液
WO2022138561A1 (ja) * 2020-12-25 2022-06-30 株式会社トクヤマ 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液
US11915941B2 (en) * 2021-02-11 2024-02-27 Tokyo Electron Limited Dynamically adjusted purge timing in wet atomic layer etching
JP7827394B2 (ja) * 2021-02-19 2026-03-10 東京エレクトロン株式会社 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法
CN117545711A (zh) * 2021-04-20 2024-02-09 奇跃公司 超声处理纳米几何形状控制过程和方法
US12506014B2 (en) 2021-10-19 2025-12-23 Tokyo Electron Limited Methods for non-isothermal wet atomic layer etching
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
US11802342B2 (en) * 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US11866831B2 (en) 2021-11-09 2024-01-09 Tokyo Electron Limited Methods for wet atomic layer etching of copper
US12237166B2 (en) * 2022-06-13 2025-02-25 Tokyo Electron Limited Methods for selective removal of surface oxides on metal films
US12604691B2 (en) 2023-08-30 2026-04-14 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
US12463050B2 (en) 2023-08-30 2025-11-04 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374328A (en) * 1993-03-25 1994-12-20 Watkins Johnson Company Method of fabricating group III-V compound
AT410043B (de) 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
JPH11251599A (ja) * 1998-03-06 1999-09-17 Toshiba Corp 薄膜半導体装置の製造方法
US6335294B1 (en) * 1999-04-22 2002-01-01 International Business Machines Corporation Wet cleans for cobalt disilicide processing
TW466728B (en) * 1999-05-21 2001-12-01 Cfmt Inc Methods for wet processing electronic components having copper containing surfaces
US20040061092A1 (en) * 2002-09-30 2004-04-01 Seagate Technology Llc Wet etch for selective removal of alumina
DE10328845B4 (de) * 2003-06-26 2005-10-20 Siltronic Ag Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe
US7531463B2 (en) * 2003-10-20 2009-05-12 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
JP4544425B2 (ja) * 2005-06-29 2010-09-15 信越化学工業株式会社 希土類金属部材の製造方法
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7776741B2 (en) * 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
US20110094888A1 (en) * 2009-10-26 2011-04-28 Headway Technologies, Inc. Rejuvenation method for ruthenium plating seed
TWI605107B (zh) 2011-08-22 2017-11-11 1366科技公司 用於酸性溼式化學蝕刻矽晶片之調配物
US10828680B2 (en) * 2013-11-11 2020-11-10 Tokyo Electron Limited System and method for enhanced removal of metal hardmask using ultra violet treatment
US9385197B2 (en) * 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
US9870899B2 (en) * 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9449843B1 (en) * 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
KR102437717B1 (ko) * 2015-06-17 2022-08-29 인텔 코포레이션 디바이스 제조를 위한 산화물 층들의 원자 층 제거에 의한 전이 금속 건식 에칭
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
WO2018004649A1 (en) 2016-07-01 2018-01-04 Intel Corporation Systems, methods and devices for etching control
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10208383B2 (en) * 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
JP7034645B2 (ja) 2017-09-22 2022-03-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
SG11202104345PA (en) 2021-05-28
KR102694693B1 (ko) 2024-08-12
JP2022507521A (ja) 2022-01-18
US10982335B2 (en) 2021-04-20
US20200157693A1 (en) 2020-05-21
KR20210076993A (ko) 2021-06-24
JP7454774B2 (ja) 2024-03-25
WO2020102655A1 (en) 2020-05-22
TWI815995B (zh) 2023-09-21
TW202031937A (zh) 2020-09-01
CN113016056A (zh) 2021-06-22

Similar Documents

Publication Publication Date Title
CN113016056B (zh) 使用自限制和溶解度受限反应的原子层湿法蚀刻
CN113039634B (zh) 用于使用自限制和溶解度受限反应的原子层湿法蚀刻的加工系统和平台
JP7784603B2 (ja) ルテニウムの湿式原子層エッチング方法
US12506014B2 (en) Methods for non-isothermal wet atomic layer etching
TW202405932A (zh) 非等溫濕式原子層蝕刻之方法
US12463050B2 (en) Methods for wet atomic layer etching of molybdenum
US20250323057A1 (en) Methods for wet atomic layer etching of molybdenum in aqueous solution
US11915941B2 (en) Dynamically adjusted purge timing in wet atomic layer etching
US20260107718A1 (en) Methods for conditioning a surface prior to etching to optimize etch performance
KR20260057415A (ko) 몰리브덴의 습식 원자 층 에칭 방법
TW202614227A (zh) 在水溶液中鉬的濕式原子層蝕刻方法
WO2025207199A1 (en) Methods for wet atomic layer etching of tungsten
WO2025221366A1 (en) Methods for wet atomic layer etching of molybdenum in aqueous solution

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant