KR102694693B1 - 자기 제어 및 용해도 제한 반응을 사용하는 습식 원자층 에칭 - Google Patents

자기 제어 및 용해도 제한 반응을 사용하는 습식 원자층 에칭 Download PDF

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KR102694693B1
KR102694693B1 KR1020217017191A KR20217017191A KR102694693B1 KR 102694693 B1 KR102694693 B1 KR 102694693B1 KR 1020217017191 A KR1020217017191 A KR 1020217017191A KR 20217017191 A KR20217017191 A KR 20217017191A KR 102694693 B1 KR102694693 B1 KR 102694693B1
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substrate
etching
polycrystalline material
paragraph
chemically modifying
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KR20210076993A (ko
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폴 아벨
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도쿄엘렉트론가부시키가이샤
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    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • H01L21/02595—
    • H01L21/31111—
    • H01L21/32134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H01L2924/01027—
    • H01L2924/01044—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1020217017191A 2018-11-15 2019-11-15 자기 제어 및 용해도 제한 반응을 사용하는 습식 원자층 에칭 Active KR102694693B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862767808P 2018-11-15 2018-11-15
US62/767,808 2018-11-15
US16/287,658 2019-02-27
US16/287,658 US10982335B2 (en) 2018-11-15 2019-02-27 Wet atomic layer etching using self-limiting and solubility-limited reactions
PCT/US2019/061678 WO2020102655A1 (en) 2018-11-15 2019-11-15 Wet atomic layer etching using self-limiting and solubility-limited reactions

Publications (2)

Publication Number Publication Date
KR20210076993A KR20210076993A (ko) 2021-06-24
KR102694693B1 true KR102694693B1 (ko) 2024-08-12

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Country Status (7)

Country Link
US (1) US10982335B2 (https=)
JP (1) JP7454774B2 (https=)
KR (1) KR102694693B1 (https=)
CN (1) CN113016056B (https=)
SG (1) SG11202104345PA (https=)
TW (1) TWI815995B (https=)
WO (1) WO2020102655A1 (https=)

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US12444610B2 (en) 2018-11-15 2025-10-14 Tokyo Electron Limited Methods for etching a substrate using a hybrid wet atomic layer etching process
US12243752B2 (en) 2018-11-15 2025-03-04 Tokyo Electron Limited Systems for etching a substrate using a hybrid wet atomic layer etching process
JP7202230B2 (ja) * 2019-03-20 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN113161259B (zh) * 2020-01-23 2025-08-12 东京毅力科创株式会社 基板处理装置、基板处理方法和化学溶液
WO2022138561A1 (ja) * 2020-12-25 2022-06-30 株式会社トクヤマ 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液
US11915941B2 (en) * 2021-02-11 2024-02-27 Tokyo Electron Limited Dynamically adjusted purge timing in wet atomic layer etching
JP7827394B2 (ja) * 2021-02-19 2026-03-10 東京エレクトロン株式会社 ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法
CN117545711A (zh) * 2021-04-20 2024-02-09 奇跃公司 超声处理纳米几何形状控制过程和方法
US12506014B2 (en) 2021-10-19 2025-12-23 Tokyo Electron Limited Methods for non-isothermal wet atomic layer etching
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
US11802342B2 (en) * 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US11866831B2 (en) 2021-11-09 2024-01-09 Tokyo Electron Limited Methods for wet atomic layer etching of copper
US12237166B2 (en) * 2022-06-13 2025-02-25 Tokyo Electron Limited Methods for selective removal of surface oxides on metal films
US12604691B2 (en) 2023-08-30 2026-04-14 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
US12463050B2 (en) 2023-08-30 2025-11-04 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials

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Also Published As

Publication number Publication date
SG11202104345PA (en) 2021-05-28
JP2022507521A (ja) 2022-01-18
CN113016056B (zh) 2024-10-18
US10982335B2 (en) 2021-04-20
US20200157693A1 (en) 2020-05-21
KR20210076993A (ko) 2021-06-24
JP7454774B2 (ja) 2024-03-25
WO2020102655A1 (en) 2020-05-22
TWI815995B (zh) 2023-09-21
TW202031937A (zh) 2020-09-01
CN113016056A (zh) 2021-06-22

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