JP2024178438A5 - - Google Patents
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- JP2024178438A5 JP2024178438A5 JP2024168308A JP2024168308A JP2024178438A5 JP 2024178438 A5 JP2024178438 A5 JP 2024178438A5 JP 2024168308 A JP2024168308 A JP 2024168308A JP 2024168308 A JP2024168308 A JP 2024168308A JP 2024178438 A5 JP2024178438 A5 JP 2024178438A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- composition
- silane
- alkyl group
- icp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 6
- 229910000077 silane Inorganic materials 0.000 claims 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 4
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 claims 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 2
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims 2
- 125000006549 C4-C10 aryl group Chemical group 0.000 claims 2
- -1 halide compounds Chemical class 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000012686 silicon precursor Substances 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962850717P | 2019-05-21 | 2019-05-21 | |
| US62/850,717 | 2019-05-21 | ||
| PCT/US2020/033897 WO2020236994A1 (en) | 2019-05-21 | 2020-05-21 | Compositions and methods using same for thermal deposition silicon-containing films |
| JP2021569456A JP7565948B2 (ja) | 2019-05-21 | 2020-05-21 | 熱堆積ケイ素含有膜のための組成物およびそれを用いる方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021569456A Division JP7565948B2 (ja) | 2019-05-21 | 2020-05-21 | 熱堆積ケイ素含有膜のための組成物およびそれを用いる方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024178438A JP2024178438A (ja) | 2024-12-24 |
| JP2024178438A5 true JP2024178438A5 (https=) | 2025-01-07 |
Family
ID=73458220
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021569456A Active JP7565948B2 (ja) | 2019-05-21 | 2020-05-21 | 熱堆積ケイ素含有膜のための組成物およびそれを用いる方法 |
| JP2024168308A Pending JP2024178438A (ja) | 2019-05-21 | 2024-09-27 | 熱堆積ケイ素含有膜のための組成物およびそれを用いる方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021569456A Active JP7565948B2 (ja) | 2019-05-21 | 2020-05-21 | 熱堆積ケイ素含有膜のための組成物およびそれを用いる方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US12320001B2 (https=) |
| EP (2) | EP3963122B1 (https=) |
| JP (2) | JP7565948B2 (https=) |
| KR (1) | KR102919635B1 (https=) |
| CN (1) | CN113994022A (https=) |
| SG (1) | SG11202112912TA (https=) |
| TW (2) | TWI792947B (https=) |
| WO (1) | WO2020236994A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116829259B (zh) | 2021-11-17 | 2025-09-09 | 株式会社Lg化学 | 用于甲烷重整的催化剂及制备其的方法 |
| KR102910512B1 (ko) * | 2023-07-26 | 2026-01-08 | 에스케이트리켐 주식회사 | 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법 |
| TW202548078A (zh) | 2024-03-26 | 2025-12-16 | 美商蓋列斯特股份有限公司 | 使用低水含量過氧化氫之含矽膜的低溫熱沉積 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3305826B2 (ja) * | 1993-08-23 | 2002-07-24 | 科学技術振興事業団 | 二酸化シリコン膜の化学気相堆積方法 |
| JP2002217190A (ja) * | 2001-01-15 | 2002-08-02 | Hitachi Chem Co Ltd | 薄膜及びその製造方法 |
| KR100505668B1 (ko) | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| EP1543549A1 (en) * | 2002-09-20 | 2005-06-22 | Honeywell International, Inc. | Interlayer adhesion promoter for low k materials |
| US7084076B2 (en) | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
| JP2006261434A (ja) * | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| KR101171020B1 (ko) * | 2009-07-03 | 2012-08-08 | 주식회사 메카로닉스 | 이산화실리콘 증착을 위한 박막 증착 방법 |
| JP5528762B2 (ja) | 2009-10-06 | 2014-06-25 | 株式会社Ａｄｅｋａ | Ａｌｄ用原料及びこれを用いたケイ素含有薄膜形成方法 |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| CN104271797B (zh) * | 2012-03-09 | 2017-08-25 | 弗萨姆材料美国有限责任公司 | 显示器件的阻隔材料 |
| WO2014092085A1 (ja) * | 2012-12-14 | 2014-06-19 | コニカミノルタ株式会社 | ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス |
| KR20150121217A (ko) | 2013-03-01 | 2015-10-28 | 어플라이드 머티어리얼스, 인코포레이티드 | ＳｉＣＮ 또는 ＳｉＣＯＮ을 포함하는 필름의 저온 원자층 증착 |
| US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US10655221B2 (en) * | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
-
2020
- 2020-05-21 EP EP20809007.6A patent/EP3963122B1/en active Active
- 2020-05-21 KR KR1020217041858A patent/KR102919635B1/ko active Active
- 2020-05-21 US US17/612,996 patent/US12320001B2/en active Active
- 2020-05-21 EP EP25194204.1A patent/EP4667617A1/en active Pending
- 2020-05-21 WO PCT/US2020/033897 patent/WO2020236994A1/en not_active Ceased
- 2020-05-21 JP JP2021569456A patent/JP7565948B2/ja active Active
- 2020-05-21 TW TW111109775A patent/TWI792947B/zh active
- 2020-05-21 TW TW109116880A patent/TWI761838B/zh active
- 2020-05-21 SG SG11202112912TA patent/SG11202112912TA/en unknown
- 2020-05-21 CN CN202080044089.5A patent/CN113994022A/zh active Pending
-
2024
- 2024-09-27 JP JP2024168308A patent/JP2024178438A/ja active Pending
-
2025
- 2025-06-02 US US19/226,057 patent/US20260071326A1/en active Pending
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