CN113994022A - 用于热沉积含硅膜的组合物及其使用方法 - Google Patents
用于热沉积含硅膜的组合物及其使用方法 Download PDFInfo
- Publication number
- CN113994022A CN113994022A CN202080044089.5A CN202080044089A CN113994022A CN 113994022 A CN113994022 A CN 113994022A CN 202080044089 A CN202080044089 A CN 202080044089A CN 113994022 A CN113994022 A CN 113994022A
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- Prior art keywords
- silicon
- reactor
- composition
- alkyl
- catalyst
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962850717P | 2019-05-21 | 2019-05-21 | |
| US62/850,717 | 2019-05-21 | ||
| PCT/US2020/033897 WO2020236994A1 (en) | 2019-05-21 | 2020-05-21 | Compositions and methods using same for thermal deposition silicon-containing films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113994022A true CN113994022A (zh) | 2022-01-28 |
Family
ID=73458220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080044089.5A Pending CN113994022A (zh) | 2019-05-21 | 2020-05-21 | 用于热沉积含硅膜的组合物及其使用方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US12320001B2 (https=) |
| EP (2) | EP3963122B1 (https=) |
| JP (2) | JP7565948B2 (https=) |
| KR (1) | KR102919635B1 (https=) |
| CN (1) | CN113994022A (https=) |
| SG (1) | SG11202112912TA (https=) |
| TW (2) | TWI792947B (https=) |
| WO (1) | WO2020236994A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116829259B (zh) | 2021-11-17 | 2025-09-09 | 株式会社Lg化学 | 用于甲烷重整的催化剂及制备其的方法 |
| KR102910512B1 (ko) * | 2023-07-26 | 2026-01-08 | 에스케이트리켐 주식회사 | 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법 |
| TW202548078A (zh) | 2024-03-26 | 2025-12-16 | 美商蓋列斯特股份有限公司 | 使用低水含量過氧化氫之含矽膜的低溫熱沉積 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766196A (ja) * | 1993-08-23 | 1995-03-10 | Res Dev Corp Of Japan | 二酸化シリコン膜の化学気相堆積方法 |
| CN101171366A (zh) * | 2005-03-17 | 2008-04-30 | 乔治洛德方法研究和开发液化空气有限公司 | 形成含氧化硅的薄膜的方法 |
| KR20110003045A (ko) * | 2009-07-03 | 2011-01-11 | 주식회사 메카로닉스 | 이산화실리콘 증착을 위한 박막 증착 방법 |
| WO2014092085A1 (ja) * | 2012-12-14 | 2014-06-19 | コニカミノルタ株式会社 | ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス |
| CN104271797A (zh) * | 2012-03-09 | 2015-01-07 | 气体产品与化学公司 | 显示器件的阻隔材料 |
| CN108411281A (zh) * | 2017-02-09 | 2018-08-17 | Asm Ip控股有限公司 | 通过热ald和peald沉积氧化物膜的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217190A (ja) * | 2001-01-15 | 2002-08-02 | Hitachi Chem Co Ltd | 薄膜及びその製造方法 |
| KR100505668B1 (ko) | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| EP1543549A1 (en) * | 2002-09-20 | 2005-06-22 | Honeywell International, Inc. | Interlayer adhesion promoter for low k materials |
| US7084076B2 (en) | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| JP5528762B2 (ja) | 2009-10-06 | 2014-06-25 | 株式会社Ａｄｅｋａ | Ａｌｄ用原料及びこれを用いたケイ素含有薄膜形成方法 |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| KR20150121217A (ko) | 2013-03-01 | 2015-10-28 | 어플라이드 머티어리얼스, 인코포레이티드 | ＳｉＣＮ 또는 ＳｉＣＯＮ을 포함하는 필름의 저온 원자층 증착 |
| US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
-
2020
- 2020-05-21 EP EP20809007.6A patent/EP3963122B1/en active Active
- 2020-05-21 KR KR1020217041858A patent/KR102919635B1/ko active Active
- 2020-05-21 US US17/612,996 patent/US12320001B2/en active Active
- 2020-05-21 EP EP25194204.1A patent/EP4667617A1/en active Pending
- 2020-05-21 WO PCT/US2020/033897 patent/WO2020236994A1/en not_active Ceased
- 2020-05-21 JP JP2021569456A patent/JP7565948B2/ja active Active
- 2020-05-21 TW TW111109775A patent/TWI792947B/zh active
- 2020-05-21 TW TW109116880A patent/TWI761838B/zh active
- 2020-05-21 SG SG11202112912TA patent/SG11202112912TA/en unknown
- 2020-05-21 CN CN202080044089.5A patent/CN113994022A/zh active Pending
-
2024
- 2024-09-27 JP JP2024168308A patent/JP2024178438A/ja active Pending
-
2025
- 2025-06-02 US US19/226,057 patent/US20260071326A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766196A (ja) * | 1993-08-23 | 1995-03-10 | Res Dev Corp Of Japan | 二酸化シリコン膜の化学気相堆積方法 |
| CN101171366A (zh) * | 2005-03-17 | 2008-04-30 | 乔治洛德方法研究和开发液化空气有限公司 | 形成含氧化硅的薄膜的方法 |
| KR20110003045A (ko) * | 2009-07-03 | 2011-01-11 | 주식회사 메카로닉스 | 이산화실리콘 증착을 위한 박막 증착 방법 |
| CN104271797A (zh) * | 2012-03-09 | 2015-01-07 | 气体产品与化学公司 | 显示器件的阻隔材料 |
| WO2014092085A1 (ja) * | 2012-12-14 | 2014-06-19 | コニカミノルタ株式会社 | ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス |
| CN108411281A (zh) * | 2017-02-09 | 2018-08-17 | Asm Ip控股有限公司 | 通过热ald和peald沉积氧化物膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210158414A (ko) | 2021-12-30 |
| US20220213597A1 (en) | 2022-07-07 |
| US12320001B2 (en) | 2025-06-03 |
| US20260071326A1 (en) | 2026-03-12 |
| JP7565948B2 (ja) | 2024-10-11 |
| KR102919635B1 (ko) | 2026-01-28 |
| TWI792947B (zh) | 2023-02-11 |
| EP3963122A1 (en) | 2022-03-09 |
| EP3963122A4 (en) | 2023-01-25 |
| EP4667617A1 (en) | 2025-12-24 |
| JP2024178438A (ja) | 2024-12-24 |
| TW202225467A (zh) | 2022-07-01 |
| JP2022532933A (ja) | 2022-07-20 |
| EP3963122B1 (en) | 2025-08-06 |
| TW202043542A (zh) | 2020-12-01 |
| WO2020236994A1 (en) | 2020-11-26 |
| TWI761838B (zh) | 2022-04-21 |
| SG11202112912TA (en) | 2021-12-30 |
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