JP2024157941A - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

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Publication number
JP2024157941A
JP2024157941A JP2023072621A JP2023072621A JP2024157941A JP 2024157941 A JP2024157941 A JP 2024157941A JP 2023072621 A JP2023072621 A JP 2023072621A JP 2023072621 A JP2023072621 A JP 2023072621A JP 2024157941 A JP2024157941 A JP 2024157941A
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JP
Japan
Prior art keywords
layer
region
cell region
jfet
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023072621A
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English (en)
Japanese (ja)
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JP2024157941A5 (enExample
Inventor
拓真 片野
Takuma Katano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2023072621A priority Critical patent/JP2024157941A/ja
Priority to PCT/JP2024/016352 priority patent/WO2024225407A1/ja
Priority to CN202480026118.3A priority patent/CN121003031A/zh
Publication of JP2024157941A publication Critical patent/JP2024157941A/ja
Publication of JP2024157941A5 publication Critical patent/JP2024157941A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation

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  • Junction Field-Effect Transistors (AREA)
JP2023072621A 2023-04-26 2023-04-26 炭化珪素半導体装置 Pending JP2024157941A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023072621A JP2024157941A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置
PCT/JP2024/016352 WO2024225407A1 (ja) 2023-04-26 2024-04-25 炭化珪素半導体装置
CN202480026118.3A CN121003031A (zh) 2023-04-26 2024-04-25 碳化硅半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023072621A JP2024157941A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JP2024157941A true JP2024157941A (ja) 2024-11-08
JP2024157941A5 JP2024157941A5 (enExample) 2025-04-01

Family

ID=93256764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023072621A Pending JP2024157941A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置

Country Status (3)

Country Link
JP (1) JP2024157941A (enExample)
CN (1) CN121003031A (enExample)
WO (1) WO2024225407A1 (enExample)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6969662B2 (ja) * 2018-02-14 2021-11-24 富士電機株式会社 半導体装置
JP7635524B2 (ja) * 2020-09-08 2025-02-26 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7647239B2 (ja) * 2021-03-30 2025-03-18 富士電機株式会社 半導体装置
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置
JP7643179B2 (ja) * 2021-05-24 2025-03-11 富士電機株式会社 炭化珪素半導体装置

Also Published As

Publication number Publication date
CN121003031A (zh) 2025-11-21
WO2024225407A1 (ja) 2024-10-31

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