JP2024022285A - 絶縁ゲート型バイポーラトランジスタ - Google Patents

絶縁ゲート型バイポーラトランジスタ Download PDF

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Publication number
JP2024022285A
JP2024022285A JP2022125751A JP2022125751A JP2024022285A JP 2024022285 A JP2024022285 A JP 2024022285A JP 2022125751 A JP2022125751 A JP 2022125751A JP 2022125751 A JP2022125751 A JP 2022125751A JP 2024022285 A JP2024022285 A JP 2024022285A
Authority
JP
Japan
Prior art keywords
trench
region
inter
contact
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022125751A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024022285A5 (enExample
Inventor
昂哉 永井
Akiya Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2022125751A priority Critical patent/JP2024022285A/ja
Priority to CN202380054249.8A priority patent/CN119586347A/zh
Priority to PCT/JP2023/017802 priority patent/WO2024029153A1/ja
Publication of JP2024022285A publication Critical patent/JP2024022285A/ja
Publication of JP2024022285A5 publication Critical patent/JP2024022285A5/ja
Priority to US19/030,438 priority patent/US20250169143A1/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/417—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/418—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the emitter side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs

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  • Electrodes Of Semiconductors (AREA)
JP2022125751A 2022-08-05 2022-08-05 絶縁ゲート型バイポーラトランジスタ Pending JP2024022285A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022125751A JP2024022285A (ja) 2022-08-05 2022-08-05 絶縁ゲート型バイポーラトランジスタ
CN202380054249.8A CN119586347A (zh) 2022-08-05 2023-05-11 绝缘栅型双极晶体管
PCT/JP2023/017802 WO2024029153A1 (ja) 2022-08-05 2023-05-11 絶縁ゲート型バイポーラトランジスタ
US19/030,438 US20250169143A1 (en) 2022-08-05 2025-01-17 Insulated gate bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022125751A JP2024022285A (ja) 2022-08-05 2022-08-05 絶縁ゲート型バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
JP2024022285A true JP2024022285A (ja) 2024-02-16
JP2024022285A5 JP2024022285A5 (enExample) 2024-10-15

Family

ID=89849126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022125751A Pending JP2024022285A (ja) 2022-08-05 2022-08-05 絶縁ゲート型バイポーラトランジスタ

Country Status (4)

Country Link
US (1) US20250169143A1 (enExample)
JP (1) JP2024022285A (enExample)
CN (1) CN119586347A (enExample)
WO (1) WO2024029153A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843644B1 (ko) 2024-11-04 2025-08-07 (주)쎄미하우 감소된　손실을 가지는 전력　반도체　장치 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
JP6515484B2 (ja) * 2014-10-21 2019-05-22 株式会社デンソー 半導体装置
JP6281548B2 (ja) * 2015-09-17 2018-02-21 トヨタ自動車株式会社 半導体装置
JP2018182254A (ja) * 2017-04-21 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019067796A (ja) * 2017-09-28 2019-04-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843644B1 (ko) 2024-11-04 2025-08-07 (주)쎄미하우 감소된　손실을 가지는 전력　반도체　장치 및 그 제조 방법

Also Published As

Publication number Publication date
CN119586347A (zh) 2025-03-07
WO2024029153A1 (ja) 2024-02-08
US20250169143A1 (en) 2025-05-22

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