JP2023547063A5 - - Google Patents

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Publication number
JP2023547063A5
JP2023547063A5 JP2023523111A JP2023523111A JP2023547063A5 JP 2023547063 A5 JP2023547063 A5 JP 2023547063A5 JP 2023523111 A JP2023523111 A JP 2023523111A JP 2023523111 A JP2023523111 A JP 2023523111A JP 2023547063 A5 JP2023547063 A5 JP 2023547063A5
Authority
JP
Japan
Prior art keywords
layer
electroacoustic device
lower electrode
disposed
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023523111A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023547063A (ja
Filing date
Publication date
Priority claimed from US17/459,325 external-priority patent/US11916537B2/en
Application filed filed Critical
Publication of JP2023547063A publication Critical patent/JP2023547063A/ja
Publication of JP2023547063A5 publication Critical patent/JP2023547063A5/ja
Pending legal-status Critical Current

Links

JP2023523111A 2020-10-28 2021-09-03 導電性音響ミラーを有する電気音響デバイス Pending JP2023547063A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063106727P 2020-10-28 2020-10-28
US63/106,727 2020-10-28
US17/459,325 US11916537B2 (en) 2020-10-28 2021-08-27 Electroacoustic device with conductive acoustic mirrors
US17/459,325 2021-08-27
PCT/EP2021/074323 WO2022089816A1 (en) 2020-10-28 2021-09-03 Electroacoustic device with conductive acoustic mirrors

Publications (2)

Publication Number Publication Date
JP2023547063A JP2023547063A (ja) 2023-11-09
JP2023547063A5 true JP2023547063A5 (https=) 2024-08-14

Family

ID=81257195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523111A Pending JP2023547063A (ja) 2020-10-28 2021-09-03 導電性音響ミラーを有する電気音響デバイス

Country Status (6)

Country Link
US (1) US11916537B2 (https=)
EP (1) EP4238215A1 (https=)
JP (1) JP2023547063A (https=)
KR (1) KR20230093261A (https=)
CN (1) CN116325497B (https=)
WO (1) WO2022089816A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023203143A1 (de) * 2023-04-05 2024-10-10 Robert Bosch Gesellschaft mit beschränkter Haftung Akustischer Wellenresonator
US12597909B2 (en) 2023-12-27 2026-04-07 Rf360 Singapore Pte. Ltd. Bulk acoustic wave device including patterned acoustic mirror layers to reduce effective thickness and related methods

Family Cites Families (20)

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US7466213B2 (en) * 2003-10-06 2008-12-16 Nxp B.V. Resonator structure and method of producing it
JP4791181B2 (ja) * 2005-12-28 2011-10-12 京セラ株式会社 薄膜バルク音響波共振子、それを備えるフィルタおよび通信装置ならびに薄膜バルク音響波共振子の製造方法
JP4924993B2 (ja) * 2006-08-25 2012-04-25 宇部興産株式会社 薄膜圧電共振器とその製造方法
JPWO2009013938A1 (ja) * 2007-07-20 2010-09-30 株式会社村田製作所 圧電共振子及び圧電フィルタ装置
US7869187B2 (en) 2007-09-04 2011-01-11 Paratek Microwave, Inc. Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore
KR100881276B1 (ko) * 2007-09-07 2009-02-05 주식회사 동부하이텍 이미지 센서 및 그 제조방법
DE102008029378B4 (de) * 2008-06-20 2010-04-15 Siemens Aktiengesellschaft Anordnung eines piezoakustischen Resonators auf einem akustischen Spiegel eines Substrats, Verfahren zum Herstellen der Anordnung und Verwendung der Anordnung
DE102009011639B4 (de) * 2009-03-04 2013-08-29 Epcos Ag Reaktanzfilter mit steiler Flanke und dessen Verwendung als Sendefilter in einem Duplexer
CN104979468A (zh) * 2014-04-10 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
US11736177B2 (en) * 2016-03-11 2023-08-22 Akoustis Inc. Front end modules for 5.6 GHz and 6.6 GHz Wi-Fi acoustic wave resonator RF filter circuits
WO2018009156A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Rram devices and their methods of fabrication
DE102016124236B4 (de) 2016-12-13 2018-07-26 Snaptrack, Inc. BAW-Resonator
US10636776B2 (en) 2018-02-28 2020-04-28 Globalfoundries Inc. Methods of manufacturing RF filters
US11770979B2 (en) * 2018-06-29 2023-09-26 Intel Corporation Conductive alloy layer in magnetic memory devices and methods of fabrication
US12155368B2 (en) * 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US10971684B2 (en) * 2018-10-30 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Intercalated metal/dielectric structure for nonvolatile memory devices
CN111030631B (zh) * 2019-12-26 2023-10-27 武汉衍熙微器件有限公司 声波器件的制作方法及声波器件
CN111049490B (zh) * 2019-12-31 2020-09-15 诺思(天津)微系统有限责任公司 带电学隔离层的体声波谐振器及其制造方法、滤波器及电子设备
CN111245387B (zh) * 2020-02-14 2021-05-25 见闻录(浙江)半导体有限公司 一种固态装配谐振器的结构及制作工艺
US11646715B2 (en) * 2020-06-22 2023-05-09 Shenzhen Sunway Communication Co., Ltd. Filter device, RF front-end device and wireless communication device

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