CN116325497B - 具有导电声学反射镜的电声器件 - Google Patents

具有导电声学反射镜的电声器件

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Publication number
CN116325497B
CN116325497B CN202180068590.XA CN202180068590A CN116325497B CN 116325497 B CN116325497 B CN 116325497B CN 202180068590 A CN202180068590 A CN 202180068590A CN 116325497 B CN116325497 B CN 116325497B
Authority
CN
China
Prior art keywords
layer
bottom electrode
electroacoustic device
electrode layer
disposed over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180068590.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN116325497A (zh
Inventor
J·克勒特
T·米特迈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RF360 Singapore Pte Ltd
Original Assignee
RF360 Europe GmbH
RF360 Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RF360 Europe GmbH, RF360 Singapore Pte Ltd filed Critical RF360 Europe GmbH
Publication of CN116325497A publication Critical patent/CN116325497A/zh
Application granted granted Critical
Publication of CN116325497B publication Critical patent/CN116325497B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN202180068590.XA 2020-10-28 2021-09-03 具有导电声学反射镜的电声器件 Active CN116325497B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063106727P 2020-10-28 2020-10-28
US63/106,727 2020-10-28
US17/459,325 US11916537B2 (en) 2020-10-28 2021-08-27 Electroacoustic device with conductive acoustic mirrors
US17/459,325 2021-08-27
PCT/EP2021/074323 WO2022089816A1 (en) 2020-10-28 2021-09-03 Electroacoustic device with conductive acoustic mirrors

Publications (2)

Publication Number Publication Date
CN116325497A CN116325497A (zh) 2023-06-23
CN116325497B true CN116325497B (zh) 2026-01-09

Family

ID=81257195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180068590.XA Active CN116325497B (zh) 2020-10-28 2021-09-03 具有导电声学反射镜的电声器件

Country Status (6)

Country Link
US (1) US11916537B2 (https=)
EP (1) EP4238215A1 (https=)
JP (1) JP2023547063A (https=)
KR (1) KR20230093261A (https=)
CN (1) CN116325497B (https=)
WO (1) WO2022089816A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023203143A1 (de) * 2023-04-05 2024-10-10 Robert Bosch Gesellschaft mit beschränkter Haftung Akustischer Wellenresonator
US12597909B2 (en) 2023-12-27 2026-04-07 Rf360 Singapore Pte. Ltd. Bulk acoustic wave device including patterned acoustic mirror layers to reduce effective thickness and related methods

Citations (2)

* Cited by examiner, † Cited by third party
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CN1864326A (zh) * 2003-10-06 2006-11-15 皇家飞利浦电子股份有限公司 谐振器结构及其制造方法
CN111245387A (zh) * 2020-02-14 2020-06-05 杭州见闻录科技有限公司 一种固态装配谐振器的结构及制作工艺

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JP4791181B2 (ja) * 2005-12-28 2011-10-12 京セラ株式会社 薄膜バルク音響波共振子、それを備えるフィルタおよび通信装置ならびに薄膜バルク音響波共振子の製造方法
JP4924993B2 (ja) * 2006-08-25 2012-04-25 宇部興産株式会社 薄膜圧電共振器とその製造方法
JPWO2009013938A1 (ja) * 2007-07-20 2010-09-30 株式会社村田製作所 圧電共振子及び圧電フィルタ装置
US7869187B2 (en) 2007-09-04 2011-01-11 Paratek Microwave, Inc. Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore
KR100881276B1 (ko) * 2007-09-07 2009-02-05 주식회사 동부하이텍 이미지 센서 및 그 제조방법
DE102008029378B4 (de) * 2008-06-20 2010-04-15 Siemens Aktiengesellschaft Anordnung eines piezoakustischen Resonators auf einem akustischen Spiegel eines Substrats, Verfahren zum Herstellen der Anordnung und Verwendung der Anordnung
DE102009011639B4 (de) * 2009-03-04 2013-08-29 Epcos Ag Reaktanzfilter mit steiler Flanke und dessen Verwendung als Sendefilter in einem Duplexer
CN104979468A (zh) * 2014-04-10 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
US11736177B2 (en) * 2016-03-11 2023-08-22 Akoustis Inc. Front end modules for 5.6 GHz and 6.6 GHz Wi-Fi acoustic wave resonator RF filter circuits
WO2018009156A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Rram devices and their methods of fabrication
DE102016124236B4 (de) 2016-12-13 2018-07-26 Snaptrack, Inc. BAW-Resonator
US10636776B2 (en) 2018-02-28 2020-04-28 Globalfoundries Inc. Methods of manufacturing RF filters
US11770979B2 (en) * 2018-06-29 2023-09-26 Intel Corporation Conductive alloy layer in magnetic memory devices and methods of fabrication
US12155368B2 (en) * 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US10971684B2 (en) * 2018-10-30 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Intercalated metal/dielectric structure for nonvolatile memory devices
CN111030631B (zh) * 2019-12-26 2023-10-27 武汉衍熙微器件有限公司 声波器件的制作方法及声波器件
CN111049490B (zh) * 2019-12-31 2020-09-15 诺思(天津)微系统有限责任公司 带电学隔离层的体声波谐振器及其制造方法、滤波器及电子设备
US11646715B2 (en) * 2020-06-22 2023-05-09 Shenzhen Sunway Communication Co., Ltd. Filter device, RF front-end device and wireless communication device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1864326A (zh) * 2003-10-06 2006-11-15 皇家飞利浦电子股份有限公司 谐振器结构及其制造方法
CN111245387A (zh) * 2020-02-14 2020-06-05 杭州见闻录科技有限公司 一种固态装配谐振器的结构及制作工艺

Also Published As

Publication number Publication date
US20220131523A1 (en) 2022-04-28
WO2022089816A1 (en) 2022-05-05
KR20230093261A (ko) 2023-06-27
EP4238215A1 (en) 2023-09-06
CN116325497A (zh) 2023-06-23
US11916537B2 (en) 2024-02-27
JP2023547063A (ja) 2023-11-09

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Applicant before: Rf360 Europe LLC

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