JP2023541692A5 - - Google Patents
Info
- Publication number
- JP2023541692A5 JP2023541692A5 JP2023518122A JP2023518122A JP2023541692A5 JP 2023541692 A5 JP2023541692 A5 JP 2023541692A5 JP 2023518122 A JP2023518122 A JP 2023518122A JP 2023518122 A JP2023518122 A JP 2023518122A JP 2023541692 A5 JP2023541692 A5 JP 2023541692A5
- Authority
- JP
- Japan
- Prior art keywords
- range
- gas mixture
- plasma
- etching gas
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2014733.6 | 2020-09-18 | ||
| GBGB2014733.6A GB202014733D0 (en) | 2020-09-18 | 2020-09-18 | Method of preparing a silicon carbide wafer |
| PCT/GB2021/052423 WO2022058743A2 (en) | 2020-09-18 | 2021-09-17 | Method of preparing a silicon carbide wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023541692A JP2023541692A (ja) | 2023-10-03 |
| JP2023541692A5 true JP2023541692A5 (https=) | 2024-09-24 |
Family
ID=73196851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023518122A Pending JP2023541692A (ja) | 2020-09-18 | 2021-09-17 | 炭化ケイ素ウェーハの作製方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230326735A1 (https=) |
| EP (1) | EP4214741A2 (https=) |
| JP (1) | JP2023541692A (https=) |
| KR (1) | KR20230066639A (https=) |
| CN (1) | CN116547783A (https=) |
| GB (3) | GB202014733D0 (https=) |
| WO (1) | WO2022058743A2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318551B (zh) * | 2022-03-14 | 2022-06-17 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片位错腐蚀方法及装置 |
| EP4553888A1 (en) | 2023-11-07 | 2025-05-14 | AlixLabs AB | Surface preparation method for epitaxial material growth |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100373460B1 (ko) * | 2001-02-08 | 2003-02-25 | 신무환 | 고효율 ＳｉＣ 소자제작을 위한 건식식각 공정 |
| JP5522907B2 (ja) * | 2008-06-23 | 2014-06-18 | ローム株式会社 | ＳｉＣ膜の加工方法、半導体装置およびその製造方法 |
| JP2010111540A (ja) * | 2008-11-06 | 2010-05-20 | Showa Denko Kk | 炭化珪素単結晶の結晶成長方法、種結晶及び炭化珪素単結晶 |
| GB0823565D0 (en) | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
| GB0903836D0 (en) | 2009-03-05 | 2009-04-22 | Oxford Instr Plasma Technology | Interface module and controller network |
| TWI570838B (zh) * | 2015-11-12 | 2017-02-11 | 財團法人工業技術研究院 | 碳化矽基板上的溝槽結構以及其製作方法 |
| CN106816372A (zh) * | 2015-11-30 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种碳化硅衬底的刻蚀方法 |
| CN107644812B (zh) * | 2016-07-21 | 2020-08-21 | 北京北方华创微电子装备有限公司 | 基片刻蚀方法 |
| CN110957214A (zh) * | 2018-09-26 | 2020-04-03 | 株洲中车时代电气股份有限公司 | 一种沟槽及其蚀刻方法 |
-
2020
- 2020-09-18 GB GBGB2014733.6A patent/GB202014733D0/en not_active Ceased
-
2021
- 2021-09-17 KR KR1020237013219A patent/KR20230066639A/ko active Pending
- 2021-09-17 US US18/027,071 patent/US20230326735A1/en active Pending
- 2021-09-17 GB GB2113317.8A patent/GB2601404B/en active Active
- 2021-09-17 JP JP2023518122A patent/JP2023541692A/ja active Pending
- 2021-09-17 EP EP21787010.4A patent/EP4214741A2/en active Pending
- 2021-09-17 CN CN202180071147.8A patent/CN116547783A/zh active Pending
- 2021-09-17 WO PCT/GB2021/052423 patent/WO2022058743A2/en not_active Ceased
- 2021-09-17 GB GB2113315.2A patent/GB2601041B/en active Active
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