JP2023541692A - 炭化ケイ素ウェーハの作製方法 - Google Patents

炭化ケイ素ウェーハの作製方法 Download PDF

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Publication number
JP2023541692A
JP2023541692A JP2023518122A JP2023518122A JP2023541692A JP 2023541692 A JP2023541692 A JP 2023541692A JP 2023518122 A JP2023518122 A JP 2023518122A JP 2023518122 A JP2023518122 A JP 2023518122A JP 2023541692 A JP2023541692 A JP 2023541692A
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JP
Japan
Prior art keywords
plasma
range
wafer
gas mixture
etching gas
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Pending
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JP2023518122A
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English (en)
Japanese (ja)
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JP2023541692A5 (https=
Inventor
サマンサ マザムト
アンドリュー ニュートン
マシュー ラブデー
マイケル クック
Original Assignee
オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド
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Publication of JP2023541692A publication Critical patent/JP2023541692A/ja
Publication of JP2023541692A5 publication Critical patent/JP2023541692A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
JP2023518122A 2020-09-18 2021-09-17 炭化ケイ素ウェーハの作製方法 Pending JP2023541692A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB2014733.6 2020-09-18
GBGB2014733.6A GB202014733D0 (en) 2020-09-18 2020-09-18 Method of preparing a silicon carbide wafer
PCT/GB2021/052423 WO2022058743A2 (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer

Publications (2)

Publication Number Publication Date
JP2023541692A true JP2023541692A (ja) 2023-10-03
JP2023541692A5 JP2023541692A5 (https=) 2024-09-24

Family

ID=73196851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023518122A Pending JP2023541692A (ja) 2020-09-18 2021-09-17 炭化ケイ素ウェーハの作製方法

Country Status (7)

Country Link
US (1) US20230326735A1 (https=)
EP (1) EP4214741A2 (https=)
JP (1) JP2023541692A (https=)
KR (1) KR20230066639A (https=)
CN (1) CN116547783A (https=)
GB (3) GB202014733D0 (https=)
WO (1) WO2022058743A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114318551B (zh) * 2022-03-14 2022-06-17 浙江大学杭州国际科创中心 一种碳化硅晶片位错腐蚀方法及装置
EP4553888A1 (en) 2023-11-07 2025-05-14 AlixLabs AB Surface preparation method for epitaxial material growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010111540A (ja) * 2008-11-06 2010-05-20 Showa Denko Kk 炭化珪素単結晶の結晶成長方法、種結晶及び炭化珪素単結晶

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373460B1 (ko) * 2001-02-08 2003-02-25 신무환 고효율 ＳｉＣ 소자제작을 위한 건식식각 공정
JP5522907B2 (ja) * 2008-06-23 2014-06-18 ローム株式会社 ＳｉＣ膜の加工方法、半導体装置およびその製造方法
GB0823565D0 (en) 2008-12-24 2009-01-28 Oxford Instr Plasma Technology Signal generating system
GB0903836D0 (en) 2009-03-05 2009-04-22 Oxford Instr Plasma Technology Interface module and controller network
TWI570838B (zh) * 2015-11-12 2017-02-11 財團法人工業技術研究院 碳化矽基板上的溝槽結構以及其製作方法
CN106816372A (zh) * 2015-11-30 2017-06-09 北京北方微电子基地设备工艺研究中心有限责任公司 一种碳化硅衬底的刻蚀方法
CN107644812B (zh) * 2016-07-21 2020-08-21 北京北方华创微电子装备有限公司 基片刻蚀方法
CN110957214A (zh) * 2018-09-26 2020-04-03 株洲中车时代电气股份有限公司 一种沟槽及其蚀刻方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010111540A (ja) * 2008-11-06 2010-05-20 Showa Denko Kk 炭化珪素単結晶の結晶成長方法、種結晶及び炭化珪素単結晶

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MIKAMI,HIDENORI ET AL., JAPANESE JOURNAL OF APPLIED PHYSICS, vol. Vol.44, No.6A, JPN6025046624, 2005, pages 3817 - 3821, ISSN: 0005730764 *
PANKRATIV,P. ET AL., AIP CONFERENCE PROCEEDINGS, vol. 2179, JPN6025046625, 2019, pages 020017, ISSN: 0005730765 *

Also Published As

Publication number Publication date
GB202014733D0 (en) 2020-11-04
GB2601041A (en) 2022-05-18
EP4214741A2 (en) 2023-07-26
GB2601404A (en) 2022-06-01
KR20230066639A (ko) 2023-05-16
GB2601404B (en) 2023-02-15
GB2601041B (en) 2023-05-31
WO2022058743A3 (en) 2022-04-21
CN116547783A (zh) 2023-08-04
US20230326735A1 (en) 2023-10-12
WO2022058743A2 (en) 2022-03-24

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