CN116547783A - 碳化硅晶片的制备方法 - Google Patents
碳化硅晶片的制备方法 Download PDFInfo
- Publication number
- CN116547783A CN116547783A CN202180071147.8A CN202180071147A CN116547783A CN 116547783 A CN116547783 A CN 116547783A CN 202180071147 A CN202180071147 A CN 202180071147A CN 116547783 A CN116547783 A CN 116547783A
- Authority
- CN
- China
- Prior art keywords
- wafer
- plasma
- range
- gas mixture
- etching gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2014733.6 | 2020-09-18 | ||
| GBGB2014733.6A GB202014733D0 (en) | 2020-09-18 | 2020-09-18 | Method of preparing a silicon carbide wafer |
| PCT/GB2021/052423 WO2022058743A2 (en) | 2020-09-18 | 2021-09-17 | Method of preparing a silicon carbide wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116547783A true CN116547783A (zh) | 2023-08-04 |
Family
ID=73196851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180071147.8A Pending CN116547783A (zh) | 2020-09-18 | 2021-09-17 | 碳化硅晶片的制备方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230326735A1 (https=) |
| EP (1) | EP4214741A2 (https=) |
| JP (1) | JP2023541692A (https=) |
| KR (1) | KR20230066639A (https=) |
| CN (1) | CN116547783A (https=) |
| GB (3) | GB202014733D0 (https=) |
| WO (1) | WO2022058743A2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318551B (zh) * | 2022-03-14 | 2022-06-17 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片位错腐蚀方法及装置 |
| EP4553888A1 (en) | 2023-11-07 | 2025-05-14 | AlixLabs AB | Surface preparation method for epitaxial material growth |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100373460B1 (ko) * | 2001-02-08 | 2003-02-25 | 신무환 | 고효율 ＳｉＣ 소자제작을 위한 건식식각 공정 |
| JP5522907B2 (ja) * | 2008-06-23 | 2014-06-18 | ローム株式会社 | ＳｉＣ膜の加工方法、半導体装置およびその製造方法 |
| JP2010111540A (ja) * | 2008-11-06 | 2010-05-20 | Showa Denko Kk | 炭化珪素単結晶の結晶成長方法、種結晶及び炭化珪素単結晶 |
| GB0823565D0 (en) | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
| GB0903836D0 (en) | 2009-03-05 | 2009-04-22 | Oxford Instr Plasma Technology | Interface module and controller network |
| TWI570838B (zh) * | 2015-11-12 | 2017-02-11 | 財團法人工業技術研究院 | 碳化矽基板上的溝槽結構以及其製作方法 |
| CN106816372A (zh) * | 2015-11-30 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种碳化硅衬底的刻蚀方法 |
| CN107644812B (zh) * | 2016-07-21 | 2020-08-21 | 北京北方华创微电子装备有限公司 | 基片刻蚀方法 |
| CN110957214A (zh) * | 2018-09-26 | 2020-04-03 | 株洲中车时代电气股份有限公司 | 一种沟槽及其蚀刻方法 |
-
2020
- 2020-09-18 GB GBGB2014733.6A patent/GB202014733D0/en not_active Ceased
-
2021
- 2021-09-17 KR KR1020237013219A patent/KR20230066639A/ko active Pending
- 2021-09-17 US US18/027,071 patent/US20230326735A1/en active Pending
- 2021-09-17 GB GB2113317.8A patent/GB2601404B/en active Active
- 2021-09-17 JP JP2023518122A patent/JP2023541692A/ja active Pending
- 2021-09-17 EP EP21787010.4A patent/EP4214741A2/en active Pending
- 2021-09-17 CN CN202180071147.8A patent/CN116547783A/zh active Pending
- 2021-09-17 WO PCT/GB2021/052423 patent/WO2022058743A2/en not_active Ceased
- 2021-09-17 GB GB2113315.2A patent/GB2601041B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| GB202014733D0 (en) | 2020-11-04 |
| GB2601041A (en) | 2022-05-18 |
| EP4214741A2 (en) | 2023-07-26 |
| GB2601404A (en) | 2022-06-01 |
| JP2023541692A (ja) | 2023-10-03 |
| KR20230066639A (ko) | 2023-05-16 |
| GB2601404B (en) | 2023-02-15 |
| GB2601041B (en) | 2023-05-31 |
| WO2022058743A3 (en) | 2022-04-21 |
| US20230326735A1 (en) | 2023-10-12 |
| WO2022058743A2 (en) | 2022-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Country or region after: United Kingdom Address after: Heiwickham, England Applicant after: OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS Ltd. Address before: Oxfordshire Applicant before: OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS Ltd. Country or region before: United Kingdom |