GB202014733D0 - Method of preparing a silicon carbide wafer - Google Patents

Method of preparing a silicon carbide wafer

Info

Publication number
GB202014733D0
GB202014733D0 GBGB2014733.6A GB202014733A GB202014733D0 GB 202014733 D0 GB202014733 D0 GB 202014733D0 GB 202014733 A GB202014733 A GB 202014733A GB 202014733 D0 GB202014733 D0 GB 202014733D0
Authority
GB
United Kingdom
Prior art keywords
preparing
silicon carbide
carbide wafer
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2014733.6A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Instruments Nanotechnology Tools Ltd
Original Assignee
Oxford Instruments Nanotechnology Tools Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instruments Nanotechnology Tools Ltd filed Critical Oxford Instruments Nanotechnology Tools Ltd
Priority to GBGB2014733.6A priority Critical patent/GB202014733D0/en
Publication of GB202014733D0 publication Critical patent/GB202014733D0/en
Priority to US18/027,071 priority patent/US20230326735A1/en
Priority to JP2023518122A priority patent/JP2023541692A/ja
Priority to GB2113315.2A priority patent/GB2601041B/en
Priority to GB2113317.8A priority patent/GB2601404B/en
Priority to PCT/GB2021/052423 priority patent/WO2022058743A2/en
Priority to EP21787010.4A priority patent/EP4214741A2/en
Priority to CN202180071147.8A priority patent/CN116547783A/zh
Priority to KR1020237013219A priority patent/KR20230066639A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
GBGB2014733.6A 2020-09-18 2020-09-18 Method of preparing a silicon carbide wafer Ceased GB202014733D0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GBGB2014733.6A GB202014733D0 (en) 2020-09-18 2020-09-18 Method of preparing a silicon carbide wafer
US18/027,071 US20230326735A1 (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
JP2023518122A JP2023541692A (ja) 2020-09-18 2021-09-17 炭化ケイ素ウェーハの作製方法
GB2113315.2A GB2601041B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
GB2113317.8A GB2601404B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
PCT/GB2021/052423 WO2022058743A2 (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
EP21787010.4A EP4214741A2 (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
CN202180071147.8A CN116547783A (zh) 2020-09-18 2021-09-17 碳化硅晶片的制备方法
KR1020237013219A KR20230066639A (ko) 2020-09-18 2021-09-17 탄화규소 웨이퍼를 준비하는 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2014733.6A GB202014733D0 (en) 2020-09-18 2020-09-18 Method of preparing a silicon carbide wafer

Publications (1)

Publication Number Publication Date
GB202014733D0 true GB202014733D0 (en) 2020-11-04

Family

ID=73196851

Family Applications (3)

Application Number Title Priority Date Filing Date
GBGB2014733.6A Ceased GB202014733D0 (en) 2020-09-18 2020-09-18 Method of preparing a silicon carbide wafer
GB2113317.8A Active GB2601404B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
GB2113315.2A Active GB2601041B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB2113317.8A Active GB2601404B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer
GB2113315.2A Active GB2601041B (en) 2020-09-18 2021-09-17 Method of preparing a silicon carbide wafer

Country Status (7)

Country Link
US (1) US20230326735A1 (https=)
EP (1) EP4214741A2 (https=)
JP (1) JP2023541692A (https=)
KR (1) KR20230066639A (https=)
CN (1) CN116547783A (https=)
GB (3) GB202014733D0 (https=)
WO (1) WO2022058743A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114318551B (zh) * 2022-03-14 2022-06-17 浙江大学杭州国际科创中心 一种碳化硅晶片位错腐蚀方法及装置
EP4553888A1 (en) 2023-11-07 2025-05-14 AlixLabs AB Surface preparation method for epitaxial material growth

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373460B1 (ko) * 2001-02-08 2003-02-25 신무환 고효율 ＳｉＣ 소자제작을 위한 건식식각 공정
JP5522907B2 (ja) * 2008-06-23 2014-06-18 ローム株式会社 ＳｉＣ膜の加工方法、半導体装置およびその製造方法
JP2010111540A (ja) * 2008-11-06 2010-05-20 Showa Denko Kk 炭化珪素単結晶の結晶成長方法、種結晶及び炭化珪素単結晶
GB0823565D0 (en) 2008-12-24 2009-01-28 Oxford Instr Plasma Technology Signal generating system
GB0903836D0 (en) 2009-03-05 2009-04-22 Oxford Instr Plasma Technology Interface module and controller network
TWI570838B (zh) * 2015-11-12 2017-02-11 財團法人工業技術研究院 碳化矽基板上的溝槽結構以及其製作方法
CN106816372A (zh) * 2015-11-30 2017-06-09 北京北方微电子基地设备工艺研究中心有限责任公司 一种碳化硅衬底的刻蚀方法
CN107644812B (zh) * 2016-07-21 2020-08-21 北京北方华创微电子装备有限公司 基片刻蚀方法
CN110957214A (zh) * 2018-09-26 2020-04-03 株洲中车时代电气股份有限公司 一种沟槽及其蚀刻方法

Also Published As

Publication number Publication date
GB2601041A (en) 2022-05-18
EP4214741A2 (en) 2023-07-26
GB2601404A (en) 2022-06-01
JP2023541692A (ja) 2023-10-03
KR20230066639A (ko) 2023-05-16
GB2601404B (en) 2023-02-15
GB2601041B (en) 2023-05-31
WO2022058743A3 (en) 2022-04-21
CN116547783A (zh) 2023-08-04
US20230326735A1 (en) 2023-10-12
WO2022058743A2 (en) 2022-03-24

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)