JP2023541682A5 - - Google Patents
Info
- Publication number
- JP2023541682A5 JP2023541682A5 JP2023517928A JP2023517928A JP2023541682A5 JP 2023541682 A5 JP2023541682 A5 JP 2023541682A5 JP 2023517928 A JP2023517928 A JP 2023517928A JP 2023517928 A JP2023517928 A JP 2023517928A JP 2023541682 A5 JP2023541682 A5 JP 2023541682A5
- Authority
- JP
- Japan
- Prior art keywords
- reactive
- processing chamber
- plasma
- hydrogenated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/026,168 | 2020-09-19 | ||
| US17/026,168 US11605536B2 (en) | 2020-09-19 | 2020-09-19 | Cyclic low temperature film growth processes |
| PCT/US2021/050516 WO2022060875A1 (en) | 2020-09-19 | 2021-09-15 | Cyclic low temperature film growth processes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023541682A JP2023541682A (ja) | 2023-10-03 |
| JP2023541682A5 true JP2023541682A5 (https=) | 2024-09-27 |
| JP7797757B2 JP7797757B2 (ja) | 2026-01-14 |
Family
ID=80741237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023517928A Active JP7797757B2 (ja) | 2020-09-19 | 2021-09-15 | 周期的低温膜成長プロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11605536B2 (https=) |
| JP (1) | JP7797757B2 (https=) |
| KR (1) | KR20230070221A (https=) |
| CN (1) | CN116829762A (https=) |
| TW (1) | TWI896762B (https=) |
| WO (1) | WO2022060875A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11605536B2 (en) * | 2020-09-19 | 2023-03-14 | Tokyo Electron Limited | Cyclic low temperature film growth processes |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4715937A (en) | 1986-05-05 | 1987-12-29 | The Board Of Trustees Of The Leland Stanford Junior University | Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge |
| JPH07221035A (ja) * | 1994-02-07 | 1995-08-18 | Semiconductor Energy Lab Co Ltd | 基板処理装置およびその動作方法 |
| JPH1070303A (ja) * | 1996-08-26 | 1998-03-10 | Fuji Xerox Co Ltd | 半導体受光素子 |
| JPH11168097A (ja) * | 1997-12-04 | 1999-06-22 | Hitachi Ltd | 半導体装置の製造方法 |
| US6682973B1 (en) * | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
| WO2004009861A2 (en) | 2002-07-19 | 2004-01-29 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
| US7972663B2 (en) | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
| US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
| US7732342B2 (en) | 2005-05-26 | 2010-06-08 | Applied Materials, Inc. | Method to increase the compressive stress of PECVD silicon nitride films |
| US8138104B2 (en) | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
| US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| KR101313705B1 (ko) | 2005-06-24 | 2013-10-01 | 주성엔지니어링(주) | 저온 폴리 실리콘의 증착방법 및 이를 위한 플라즈마발생장치 |
| JP2007073941A (ja) * | 2005-08-11 | 2007-03-22 | Advanced Lcd Technologies Development Center Co Ltd | 非結晶半導体膜の結晶化方法及び結晶化用被処理基板の製造装置 |
| US20070087581A1 (en) * | 2005-09-09 | 2007-04-19 | Varian Semiconductor Equipment Associates, Inc. | Technique for atomic layer deposition |
| KR101402103B1 (ko) | 2007-03-23 | 2014-06-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US20090120924A1 (en) | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| US20090155606A1 (en) | 2007-12-13 | 2009-06-18 | Asm Genitech Korea Ltd. | Methods of depositing a silicon nitride film |
| JP5467007B2 (ja) | 2009-09-30 | 2014-04-09 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| WO2012061593A2 (en) * | 2010-11-03 | 2012-05-10 | Applied Materials, Inc. | Apparatus and methods for deposition of silicon carbide and silicon carbonitride films |
| US8563924B2 (en) * | 2011-06-28 | 2013-10-22 | Agilent Technologies, Inc. | Windowless ionization device |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| US9214333B1 (en) * | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
| US9911620B2 (en) | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| JP6665032B2 (ja) * | 2015-08-26 | 2020-03-13 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法および熱処理装置 |
| SG11202103231VA (en) * | 2018-10-03 | 2021-04-29 | Versum Materials Us Llc | Methods for making silicon and nitrogen containing films |
| US11605536B2 (en) * | 2020-09-19 | 2023-03-14 | Tokyo Electron Limited | Cyclic low temperature film growth processes |
-
2020
- 2020-09-19 US US17/026,168 patent/US11605536B2/en active Active
-
2021
- 2021-09-15 JP JP2023517928A patent/JP7797757B2/ja active Active
- 2021-09-15 CN CN202180063927.8A patent/CN116829762A/zh active Pending
- 2021-09-15 KR KR1020237010054A patent/KR20230070221A/ko active Pending
- 2021-09-15 WO PCT/US2021/050516 patent/WO2022060875A1/en not_active Ceased
- 2021-09-17 TW TW110134741A patent/TWI896762B/zh active
-
2023
- 2023-01-17 US US18/155,507 patent/US12176204B2/en active Active
-
2024
- 2024-12-02 US US18/965,507 patent/US20250095983A1/en active Pending
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