KR20230070221A - 주기적인 저온 필름 성장 공정 - Google Patents

주기적인 저온 필름 성장 공정 Download PDF

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KR20230070221A
KR20230070221A KR1020237010054A KR20237010054A KR20230070221A KR 20230070221 A KR20230070221 A KR 20230070221A KR 1020237010054 A KR1020237010054 A KR 1020237010054A KR 20237010054 A KR20237010054 A KR 20237010054A KR 20230070221 A KR20230070221 A KR 20230070221A
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substrate
process chamber
reactive
plasma
temperature
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Korean (ko)
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지안핑 쟈오
피터 벤트젝
도시히코 이와오
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도쿄엘렉트론가부시키가이샤
도쿄 일렉트론 유.에스. 홀딩스, 인크.
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Publication of KR20230070221A publication Critical patent/KR20230070221A/ko
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    • HELECTRICITY
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    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6316Formation by nitridation, e.g. nitridation of the substrate
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020237010054A 2020-09-19 2021-09-15 주기적인 저온 필름 성장 공정 Pending KR20230070221A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/026,168 2020-09-19
US17/026,168 US11605536B2 (en) 2020-09-19 2020-09-19 Cyclic low temperature film growth processes
PCT/US2021/050516 WO2022060875A1 (en) 2020-09-19 2021-09-15 Cyclic low temperature film growth processes

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KR20230070221A true KR20230070221A (ko) 2023-05-22

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US (3) US11605536B2 (https=)
JP (1) JP7797757B2 (https=)
KR (1) KR20230070221A (https=)
CN (1) CN116829762A (https=)
TW (1) TWI896762B (https=)
WO (1) WO2022060875A1 (https=)

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