JP2023536363A5 - - Google Patents

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Publication number
JP2023536363A5
JP2023536363A5 JP2023507874A JP2023507874A JP2023536363A5 JP 2023536363 A5 JP2023536363 A5 JP 2023536363A5 JP 2023507874 A JP2023507874 A JP 2023507874A JP 2023507874 A JP2023507874 A JP 2023507874A JP 2023536363 A5 JP2023536363 A5 JP 2023536363A5
Authority
JP
Japan
Prior art keywords
led structure
group iii
iii nitride
porous region
nitride material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023507874A
Other languages
English (en)
Japanese (ja)
Other versions
JP7835731B2 (ja
JP2023536363A (ja
Filing date
Publication date
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from PCT/GB2021/050152 external-priority patent/WO2021148808A1/en
Priority claimed from GBGB2102012.8A external-priority patent/GB202102012D0/en
Priority claimed from GBGB2102017.7A external-priority patent/GB202102017D0/en
Priority claimed from GBGB2102021.9A external-priority patent/GB202102021D0/en
Application filed filed Critical
Priority claimed from PCT/GB2021/052022 external-priority patent/WO2022029436A1/en
Publication of JP2023536363A publication Critical patent/JP2023536363A/ja
Publication of JP2023536363A5 publication Critical patent/JP2023536363A5/ja
Publication of JP7835731B2 publication Critical patent/JP7835731B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023507874A 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法 Active JP7835731B2 (ja)

Applications Claiming Priority (25)

Application Number Priority Date Filing Date Title
GB2012103.4 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
GBPCT/GB2021/050152 2021-01-22
GBPCT/GB2021/050147 2021-01-22
GBPCT/GB2021/050158 2021-01-22
GB2102012.8 2021-02-12
GBGB2102012.8A GB202102012D0 (en) 2021-02-12 2021-02-12 LED Device and method of manufacture
GB2102021.9 2021-02-12
GBGB2102017.7A GB202102017D0 (en) 2021-02-12 2021-02-12 LED Device and method manufacture
GB2102017.7 2021-02-12
GBGB2102021.9A GB202102021D0 (en) 2021-02-12 2021-02-12 Led device and method of manufacture
PCT/GB2021/052022 WO2022029436A1 (en) 2020-08-04 2021-08-04 Led device and method of manufacturing an led device

Publications (3)

Publication Number Publication Date
JP2023536363A JP2023536363A (ja) 2023-08-24
JP2023536363A5 true JP2023536363A5 (enExample) 2024-08-14
JP7835731B2 JP7835731B2 (ja) 2026-03-25

Family

ID=80120106

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2023507871A Active JP7887885B2 (ja) 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法
JP2023507874A Active JP7835731B2 (ja) 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法
JP2023507873A Pending JP2023536362A (ja) 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2023507871A Active JP7887885B2 (ja) 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023507873A Pending JP2023536362A (ja) 2020-08-04 2021-08-04 Ledデバイス及びledデバイスの製造方法

Country Status (7)

Country Link
US (3) US12701846B2 (enExample)
EP (3) EP4193391A1 (enExample)
JP (3) JP7887885B2 (enExample)
KR (3) KR20230058639A (enExample)
CN (3) CN116325189A (enExample)
TW (3) TW202211498A (enExample)
WO (3) WO2022029436A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3124313B1 (fr) * 2021-06-16 2023-06-30 Commissariat Energie Atomique Procede de fabrication d’une matrice a emission native
KR20240030349A (ko) 2022-08-30 2024-03-07 삼성전자주식회사 다중 파장 발광 소자 및 그 제조 방법
GB202216889D0 (en) * 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
FR3144485B1 (fr) * 2022-12-21 2024-12-13 Commissariat Energie Atomique Procédé de fabrication d’un substrat de croissance comportant des mésas de différentes deformabilites, par gravure et porosification électrochimique
JP2025026068A (ja) * 2023-08-10 2025-02-21 豊田合成株式会社 発光素子
FR3164057A1 (fr) * 2024-06-27 2026-01-02 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Procédé de porosification de mésas

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122644B2 (ja) 1998-09-10 2001-01-09 シャープ株式会社 半導体発光素子の製造方法
JP2004079933A (ja) 2002-08-22 2004-03-11 Ishikawajima Harima Heavy Ind Co Ltd Ledディスプレイとその製造方法
EP1583139A1 (en) * 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
TWI249966B (en) 2004-10-20 2006-02-21 Genesis Photonics Inc Light-emitting device having porous light-emitting layer
JP4525500B2 (ja) 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
US8174025B2 (en) 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
US20090001416A1 (en) * 2007-06-28 2009-01-01 National University Of Singapore Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
JP2009021361A (ja) 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
WO2009038324A2 (en) 2007-09-18 2009-03-26 Chungbuk National University Industry-Academic Cooperation Foundation Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
US8058669B2 (en) 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme
TWI392118B (zh) 2008-12-04 2013-04-01 廣鎵光電股份有限公司 發光二極體之製造方法及發光二極體
KR101136063B1 (ko) 2010-11-10 2012-04-18 전북대학교산학협력단 발광소자 및 그 제조방법
JP5854419B2 (ja) * 2011-03-18 2016-02-09 国立大学法人山口大学 多波長発光素子及びその製造方法
KR20130066870A (ko) 2011-12-13 2013-06-21 삼성전자주식회사 반도체 발광소자
KR101278063B1 (ko) * 2012-02-06 2013-06-24 전남대학교산학협력단 나노포러스 구조를 이용한 반도체소자 분리방법
WO2013140320A1 (en) 2012-03-19 2013-09-26 Koninklijke Philips N.V. Light emitting device grown on a silicon substrate
JP2014127708A (ja) 2012-12-27 2014-07-07 Toshiba Corp 半導体発光素子及び半導体発光素子の製造方法
WO2014197799A1 (en) 2013-06-07 2014-12-11 Glo-Usa, Inc. Multicolor led and method of fabricating thereof
KR101452801B1 (ko) 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US10418519B2 (en) 2015-12-22 2019-09-17 Apple Inc. LED sidewall processing to mitigate non-radiative recombination
KR20180133436A (ko) 2016-05-04 2018-12-14 글로 에이비 상이한 색상의 led를 포함하는 일체형 다색 직시형 디스플레이와 이의 제조 방법
WO2018063391A1 (en) * 2016-09-30 2018-04-05 Intel Corporation High performance light emitting diode and monolithic multi-color pixel
EP3529838B1 (en) 2016-10-24 2022-02-23 Nanosys, Inc. Indium gallium nitride red light emitting diode and method of making thereof
US10708995B2 (en) * 2017-05-12 2020-07-07 The Regents Of The University Of Michigan Color mixing monolithically integrated light-emitting diode pixels
US20200152841A1 (en) * 2017-07-31 2020-05-14 Yale University Nanoporous micro-led devices and methods for making
US10651357B2 (en) 2017-08-03 2020-05-12 Cree, Inc. High density pixelated-led chips and chip array devices
JP7062757B2 (ja) * 2017-09-27 2022-05-06 ケンブリッジ エンタープライズ リミテッド 材料および半導体構造を多孔質化する方法
US11005004B2 (en) * 2017-10-20 2021-05-11 Korea Advanced Institute Of Science And Technology Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same
CN107946417B (zh) 2017-11-29 2019-09-03 北京工业大学 一种全色微型led阵列垂直外延制备方法
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN109768135B (zh) 2018-12-27 2020-06-19 武汉大学 全色堆栈式倒装RGB Micro-LED芯片阵列及其制备方法
FR3094568B1 (fr) * 2019-03-29 2022-04-22 Commissariat Energie Atomique Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles
WO2021150688A1 (en) * 2020-01-21 2021-07-29 The Regents Of The University Of California Iii-nitride p-n junction device using porous layer
GB2592017B (en) * 2020-02-11 2022-08-03 Plessey Semiconductors Ltd Multicolour light emitting structure
WO2022099500A1 (zh) * 2020-11-11 2022-05-19 苏州晶湛半导体有限公司 一种发光结构及其制备方法

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