JP2023536363A5 - - Google Patents
Info
- Publication number
- JP2023536363A5 JP2023536363A5 JP2023507874A JP2023507874A JP2023536363A5 JP 2023536363 A5 JP2023536363 A5 JP 2023536363A5 JP 2023507874 A JP2023507874 A JP 2023507874A JP 2023507874 A JP2023507874 A JP 2023507874A JP 2023536363 A5 JP2023536363 A5 JP 2023536363A5
- Authority
- JP
- Japan
- Prior art keywords
- led structure
- group iii
- iii nitride
- porous region
- nitride material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (25)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2012103.4 | 2020-08-04 | ||
| GBGB2012108.3A GB202012108D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012105.9 | 2020-08-04 | ||
| GBGB2012110.9A GB202012110D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GBGB2012098.6A GB202012098D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GBGB2012103.4A GB202012103D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012098.6 | 2020-08-04 | ||
| GB2012110.9 | 2020-08-04 | ||
| GBGB2012105.9A GB202012105D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012108.3 | 2020-08-04 | ||
| GB2018016.2 | 2020-11-16 | ||
| GBGB2018016.2A GB202018016D0 (en) | 2020-11-16 | 2020-11-16 | Red led and method of manufacture |
| PCT/GB2021/050152 WO2021148808A1 (en) | 2020-01-22 | 2021-01-22 | Red led and method of manufacture |
| PCT/GB2021/050147 WO2021148803A1 (en) | 2020-01-22 | 2021-01-22 | Micro-led and manufacturing method thereof |
| PCT/GB2021/050158 WO2021148813A1 (en) | 2020-01-22 | 2021-01-22 | Semiconductor structure and method of manufacture |
| GBPCT/GB2021/050152 | 2021-01-22 | ||
| GBPCT/GB2021/050147 | 2021-01-22 | ||
| GBPCT/GB2021/050158 | 2021-01-22 | ||
| GB2102012.8 | 2021-02-12 | ||
| GBGB2102012.8A GB202102012D0 (en) | 2021-02-12 | 2021-02-12 | LED Device and method of manufacture |
| GB2102021.9 | 2021-02-12 | ||
| GBGB2102017.7A GB202102017D0 (en) | 2021-02-12 | 2021-02-12 | LED Device and method manufacture |
| GB2102017.7 | 2021-02-12 | ||
| GBGB2102021.9A GB202102021D0 (en) | 2021-02-12 | 2021-02-12 | Led device and method of manufacture |
| PCT/GB2021/052022 WO2022029436A1 (en) | 2020-08-04 | 2021-08-04 | Led device and method of manufacturing an led device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023536363A JP2023536363A (ja) | 2023-08-24 |
| JP2023536363A5 true JP2023536363A5 (enExample) | 2024-08-14 |
| JP7835731B2 JP7835731B2 (ja) | 2026-03-25 |
Family
ID=80120106
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023507871A Active JP7887885B2 (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
| JP2023507874A Active JP7835731B2 (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
| JP2023507873A Pending JP2023536362A (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023507871A Active JP7887885B2 (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023507873A Pending JP2023536362A (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US12701846B2 (enExample) |
| EP (3) | EP4193391A1 (enExample) |
| JP (3) | JP7887885B2 (enExample) |
| KR (3) | KR20230058639A (enExample) |
| CN (3) | CN116325189A (enExample) |
| TW (3) | TW202211498A (enExample) |
| WO (3) | WO2022029436A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3124313B1 (fr) * | 2021-06-16 | 2023-06-30 | Commissariat Energie Atomique | Procede de fabrication d’une matrice a emission native |
| KR20240030349A (ko) | 2022-08-30 | 2024-03-07 | 삼성전자주식회사 | 다중 파장 발광 소자 및 그 제조 방법 |
| GB202216889D0 (en) * | 2022-11-11 | 2022-12-28 | Poro Tech Ltd | Opto-electronic device and method of manufacturing |
| FR3144485B1 (fr) * | 2022-12-21 | 2024-12-13 | Commissariat Energie Atomique | Procédé de fabrication d’un substrat de croissance comportant des mésas de différentes deformabilites, par gravure et porosification électrochimique |
| JP2025026068A (ja) * | 2023-08-10 | 2025-02-21 | 豊田合成株式会社 | 発光素子 |
| FR3164057A1 (fr) * | 2024-06-27 | 2026-01-02 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives | Procédé de porosification de mésas |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3122644B2 (ja) | 1998-09-10 | 2001-01-09 | シャープ株式会社 | 半導体発光素子の製造方法 |
| JP2004079933A (ja) | 2002-08-22 | 2004-03-11 | Ishikawajima Harima Heavy Ind Co Ltd | Ledディスプレイとその製造方法 |
| EP1583139A1 (en) * | 2004-04-02 | 2005-10-05 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
| TWI249966B (en) | 2004-10-20 | 2006-02-21 | Genesis Photonics Inc | Light-emitting device having porous light-emitting layer |
| JP4525500B2 (ja) | 2005-07-14 | 2010-08-18 | パナソニック電工株式会社 | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| US8174025B2 (en) | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| US20090001416A1 (en) * | 2007-06-28 | 2009-01-01 | National University Of Singapore | Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) |
| JP2009021361A (ja) | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
| WO2009038324A2 (en) | 2007-09-18 | 2009-03-26 | Chungbuk National University Industry-Academic Cooperation Foundation | Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof |
| US7928448B2 (en) | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
| US8058669B2 (en) | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
| TWI392118B (zh) | 2008-12-04 | 2013-04-01 | 廣鎵光電股份有限公司 | 發光二極體之製造方法及發光二極體 |
| KR101136063B1 (ko) | 2010-11-10 | 2012-04-18 | 전북대학교산학협력단 | 발광소자 및 그 제조방법 |
| JP5854419B2 (ja) * | 2011-03-18 | 2016-02-09 | 国立大学法人山口大学 | 多波長発光素子及びその製造方法 |
| KR20130066870A (ko) | 2011-12-13 | 2013-06-21 | 삼성전자주식회사 | 반도체 발광소자 |
| KR101278063B1 (ko) * | 2012-02-06 | 2013-06-24 | 전남대학교산학협력단 | 나노포러스 구조를 이용한 반도체소자 분리방법 |
| WO2013140320A1 (en) | 2012-03-19 | 2013-09-26 | Koninklijke Philips N.V. | Light emitting device grown on a silicon substrate |
| JP2014127708A (ja) | 2012-12-27 | 2014-07-07 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
| WO2014197799A1 (en) | 2013-06-07 | 2014-12-11 | Glo-Usa, Inc. | Multicolor led and method of fabricating thereof |
| KR101452801B1 (ko) | 2014-03-25 | 2014-10-22 | 광주과학기술원 | 발광다이오드 및 이의 제조방법 |
| EP3201952B1 (en) | 2014-09-30 | 2023-03-29 | Yale University | A method for gan vertical microcavity surface emitting laser |
| US9484492B2 (en) * | 2015-01-06 | 2016-11-01 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
| US10418519B2 (en) | 2015-12-22 | 2019-09-17 | Apple Inc. | LED sidewall processing to mitigate non-radiative recombination |
| KR20180133436A (ko) | 2016-05-04 | 2018-12-14 | 글로 에이비 | 상이한 색상의 led를 포함하는 일체형 다색 직시형 디스플레이와 이의 제조 방법 |
| WO2018063391A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | High performance light emitting diode and monolithic multi-color pixel |
| EP3529838B1 (en) | 2016-10-24 | 2022-02-23 | Nanosys, Inc. | Indium gallium nitride red light emitting diode and method of making thereof |
| US10708995B2 (en) * | 2017-05-12 | 2020-07-07 | The Regents Of The University Of Michigan | Color mixing monolithically integrated light-emitting diode pixels |
| US20200152841A1 (en) * | 2017-07-31 | 2020-05-14 | Yale University | Nanoporous micro-led devices and methods for making |
| US10651357B2 (en) | 2017-08-03 | 2020-05-12 | Cree, Inc. | High density pixelated-led chips and chip array devices |
| JP7062757B2 (ja) * | 2017-09-27 | 2022-05-06 | ケンブリッジ エンタープライズ リミテッド | 材料および半導体構造を多孔質化する方法 |
| US11005004B2 (en) * | 2017-10-20 | 2021-05-11 | Korea Advanced Institute Of Science And Technology | Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same |
| CN107946417B (zh) | 2017-11-29 | 2019-09-03 | 北京工业大学 | 一种全色微型led阵列垂直外延制备方法 |
| GB201801337D0 (en) | 2018-01-26 | 2018-03-14 | Cambridge Entpr Ltd | Method for etching a semiconductor structure |
| CN109768135B (zh) | 2018-12-27 | 2020-06-19 | 武汉大学 | 全色堆栈式倒装RGB Micro-LED芯片阵列及其制备方法 |
| FR3094568B1 (fr) * | 2019-03-29 | 2022-04-22 | Commissariat Energie Atomique | Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles |
| WO2021150688A1 (en) * | 2020-01-21 | 2021-07-29 | The Regents Of The University Of California | Iii-nitride p-n junction device using porous layer |
| GB2592017B (en) * | 2020-02-11 | 2022-08-03 | Plessey Semiconductors Ltd | Multicolour light emitting structure |
| WO2022099500A1 (zh) * | 2020-11-11 | 2022-05-19 | 苏州晶湛半导体有限公司 | 一种发光结构及其制备方法 |
-
2021
- 2021-08-03 TW TW110128573A patent/TW202211498A/zh unknown
- 2021-08-03 TW TW110128567A patent/TWI912341B/zh active
- 2021-08-03 TW TW110128568A patent/TWI905240B/zh active
- 2021-08-04 KR KR1020237007771A patent/KR20230058639A/ko not_active Withdrawn
- 2021-08-04 US US18/040,529 patent/US12701846B2/en active Active
- 2021-08-04 KR KR1020237007768A patent/KR20230058637A/ko active Pending
- 2021-08-04 CN CN202180067476.5A patent/CN116325189A/zh active Pending
- 2021-08-04 EP EP21752134.3A patent/EP4193391A1/en active Pending
- 2021-08-04 WO PCT/GB2021/052022 patent/WO2022029436A1/en not_active Ceased
- 2021-08-04 CN CN202180067477.XA patent/CN116325190A/zh active Pending
- 2021-08-04 US US18/040,534 patent/US20240014348A1/en active Pending
- 2021-08-04 EP EP21752137.6A patent/EP4193394A1/en active Pending
- 2021-08-04 JP JP2023507871A patent/JP7887885B2/ja active Active
- 2021-08-04 JP JP2023507874A patent/JP7835731B2/ja active Active
- 2021-08-04 KR KR1020237007770A patent/KR20230060507A/ko active Pending
- 2021-08-04 US US18/040,524 patent/US20230378237A1/en active Pending
- 2021-08-04 JP JP2023507873A patent/JP2023536362A/ja active Pending
- 2021-08-04 EP EP21752136.8A patent/EP4193393A1/en active Pending
- 2021-08-04 CN CN202180066636.4A patent/CN116210091A/zh active Pending
- 2021-08-04 WO PCT/GB2021/052019 patent/WO2022029433A1/en not_active Ceased
- 2021-08-04 WO PCT/GB2021/052023 patent/WO2022029437A1/en not_active Ceased
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