JP7887885B2 - Ｌｅｄデバイス及びｌｅｄデバイスの製造方法 - Google Patents

Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

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Publication number
JP7887885B2
JP7887885B2 JP2023507871A JP2023507871A JP7887885B2 JP 7887885 B2 JP7887885 B2 JP 7887885B2 JP 2023507871 A JP2023507871 A JP 2023507871A JP 2023507871 A JP2023507871 A JP 2023507871A JP 7887885 B2 JP7887885 B2 JP 7887885B2
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led structure
led
porous
porous region
region
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English (en)
Japanese (ja)
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JP2023536360A5 (enExample
JP2023536360A (ja
Inventor
リュー，インジュン
ズー，トントン
アリー，ムハンマド
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ポロ テクノロジーズ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from GBGB2102017.7A external-priority patent/GB202102017D0/en
Priority claimed from GBGB2102012.8A external-priority patent/GB202102012D0/en
Priority claimed from GBGB2102021.9A external-priority patent/GB202102021D0/en
Application filed by ポロ テクノロジーズ リミテッド filed Critical ポロ テクノロジーズ リミテッド
Publication of JP2023536360A publication Critical patent/JP2023536360A/ja
Publication of JP2023536360A5 publication Critical patent/JP2023536360A5/ja
Publication of JP7887885B2 publication Critical patent/JP7887885B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2023507871A 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法 Active JP7887885B2 (ja)

Applications Claiming Priority (25)

Application Number Priority Date Filing Date Title
GB2012103.4 2020-08-04
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GB2012108.3 2020-08-04
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
GBPCT/GB2021/050147 2021-01-22
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
GBPCT/GB2021/050158 2021-01-22
GBPCT/GB2021/050152 2021-01-22
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
GB2102012.8 2021-02-12
GB2102021.9 2021-02-12
GBGB2102017.7A GB202102017D0 (en) 2021-02-12 2021-02-12 LED Device and method manufacture
GBGB2102012.8A GB202102012D0 (en) 2021-02-12 2021-02-12 LED Device and method of manufacture
GB2102017.7 2021-02-12
GBGB2102021.9A GB202102021D0 (en) 2021-02-12 2021-02-12 Led device and method of manufacture
PCT/GB2021/052019 WO2022029433A1 (en) 2020-08-04 2021-08-04 Led device and method of manufacturing an led device

Publications (3)

Publication Number Publication Date
JP2023536360A JP2023536360A (ja) 2023-08-24
JP2023536360A5 JP2023536360A5 (enExample) 2024-08-14
JP7887885B2 true JP7887885B2 (ja) 2026-07-10

Family

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Family Applications (3)

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JP2023507871A Active JP7887885B2 (ja) 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法
JP2023507874A Active JP7835731B2 (ja) 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法
JP2023507873A Pending JP2023536362A (ja) 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

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JP2023507873A Pending JP2023536362A (ja) 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

Country Status (7)

Country Link
US (3) US12701846B2 (enExample)
EP (3) EP4193391A1 (enExample)
JP (3) JP7887885B2 (enExample)
KR (3) KR20230058639A (enExample)
CN (3) CN116325189A (enExample)
TW (3) TW202211498A (enExample)
WO (3) WO2022029436A1 (enExample)

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KR20240030349A (ko) 2022-08-30 2024-03-07 삼성전자주식회사 다중 파장 발광 소자 및 그 제조 방법
GB202216889D0 (en) * 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
FR3144485B1 (fr) * 2022-12-21 2024-12-13 Commissariat Energie Atomique Procédé de fabrication d’un substrat de croissance comportant des mésas de différentes deformabilites, par gravure et porosification électrochimique
JP2025026068A (ja) * 2023-08-10 2025-02-21 豊田合成株式会社 発光素子
FR3164057A1 (fr) * 2024-06-27 2026-01-02 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Procédé de porosification de mésas

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Also Published As

Publication number Publication date
CN116325189A (zh) 2023-06-23
US20230378237A1 (en) 2023-11-23
TWI905240B (zh) 2025-11-21
CN116210091A (zh) 2023-06-02
KR20230058639A (ko) 2023-05-03
EP4193394A1 (en) 2023-06-14
WO2022029433A1 (en) 2022-02-10
WO2022029437A1 (en) 2022-02-10
US12701846B2 (en) 2026-08-04
US20230290806A1 (en) 2023-09-14
KR20230058637A (ko) 2023-05-03
TW202224205A (zh) 2022-06-16
JP7835731B2 (ja) 2026-03-25
CN116325190A (zh) 2023-06-23
TW202211498A (zh) 2022-03-16
WO2022029436A1 (en) 2022-02-10
EP4193391A1 (en) 2023-06-14
TWI912341B (zh) 2026-01-21
JP2023536363A (ja) 2023-08-24
KR20230060507A (ko) 2023-05-04
TW202221937A (zh) 2022-06-01
JP2023536362A (ja) 2023-08-24
US20240014348A1 (en) 2024-01-11
EP4193393A1 (en) 2023-06-14
JP2023536360A (ja) 2023-08-24

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