TW202211498A - Led裝置及製造方法 - Google Patents

Led裝置及製造方法 Download PDF

Info

Publication number
TW202211498A
TW202211498A TW110128573A TW110128573A TW202211498A TW 202211498 A TW202211498 A TW 202211498A TW 110128573 A TW110128573 A TW 110128573A TW 110128573 A TW110128573 A TW 110128573A TW 202211498 A TW202211498 A TW 202211498A
Authority
TW
Taiwan
Prior art keywords
led
led structure
porous
nitride material
layer
Prior art date
Application number
TW110128573A
Other languages
English (en)
Chinese (zh)
Inventor
朱彤彤
劉穎俊
穆罕默德 阿里
Original Assignee
英商普羅科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from GBGB2102017.7A external-priority patent/GB202102017D0/en
Priority claimed from GBGB2102012.8A external-priority patent/GB202102012D0/en
Priority claimed from GBGB2102021.9A external-priority patent/GB202102021D0/en
Application filed by 英商普羅科技有限公司 filed Critical 英商普羅科技有限公司
Publication of TW202211498A publication Critical patent/TW202211498A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW110128573A 2020-08-04 2021-08-03 Led裝置及製造方法 TW202211498A (zh)

Applications Claiming Priority (24)

Application Number Priority Date Filing Date Title
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012103.4 2020-08-04
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
GB2018016.2 2020-11-16
WOPCT/GB2021/050158 2021-01-22
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
WOPCT/GB2021/050147 2021-01-22
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
WOPCT/GB2021/050152 2021-01-22
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
GB2102021.9 2021-02-12
GBGB2102017.7A GB202102017D0 (en) 2021-02-12 2021-02-12 LED Device and method manufacture
GBGB2102012.8A GB202102012D0 (en) 2021-02-12 2021-02-12 LED Device and method of manufacture
GB2102012.8 2021-02-12
GB2102017.7 2021-02-12
GBGB2102021.9A GB202102021D0 (en) 2021-02-12 2021-02-12 Led device and method of manufacture

Publications (1)

Publication Number Publication Date
TW202211498A true TW202211498A (zh) 2022-03-16

Family

ID=80120106

Family Applications (3)

Application Number Title Priority Date Filing Date
TW110128573A TW202211498A (zh) 2020-08-04 2021-08-03 Led裝置及製造方法
TW110128567A TWI912341B (zh) 2020-08-04 2021-08-03 Led裝置及製造方法
TW110128568A TWI905240B (zh) 2020-08-04 2021-08-03 Led裝置及製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW110128567A TWI912341B (zh) 2020-08-04 2021-08-03 Led裝置及製造方法
TW110128568A TWI905240B (zh) 2020-08-04 2021-08-03 Led裝置及製造方法

Country Status (7)

Country Link
US (3) US12701846B2 (enExample)
EP (3) EP4193391A1 (enExample)
JP (3) JP7887885B2 (enExample)
KR (3) KR20230058639A (enExample)
CN (3) CN116325189A (enExample)
TW (3) TW202211498A (enExample)
WO (3) WO2022029436A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3124313B1 (fr) * 2021-06-16 2023-06-30 Commissariat Energie Atomique Procede de fabrication d’une matrice a emission native
KR20240030349A (ko) 2022-08-30 2024-03-07 삼성전자주식회사 다중 파장 발광 소자 및 그 제조 방법
GB202216889D0 (en) * 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
FR3144485B1 (fr) * 2022-12-21 2024-12-13 Commissariat Energie Atomique Procédé de fabrication d’un substrat de croissance comportant des mésas de différentes deformabilites, par gravure et porosification électrochimique
JP2025026068A (ja) * 2023-08-10 2025-02-21 豊田合成株式会社 発光素子
FR3164057A1 (fr) * 2024-06-27 2026-01-02 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Procédé de porosification de mésas

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122644B2 (ja) 1998-09-10 2001-01-09 シャープ株式会社 半導体発光素子の製造方法
JP2004079933A (ja) 2002-08-22 2004-03-11 Ishikawajima Harima Heavy Ind Co Ltd Ｌｅｄディスプレイとその製造方法
EP1583139A1 (en) * 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
TWI249966B (en) 2004-10-20 2006-02-21 Genesis Photonics Inc Light-emitting device having porous light-emitting layer
JP4525500B2 (ja) 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
US8174025B2 (en) 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
US20090001416A1 (en) * 2007-06-28 2009-01-01 National University Of Singapore Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
JP2009021361A (ja) 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
WO2009038324A2 (en) 2007-09-18 2009-03-26 Chungbuk National University Industry-Academic Cooperation Foundation Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
US8058669B2 (en) 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme
TWI392118B (zh) 2008-12-04 2013-04-01 廣鎵光電股份有限公司 發光二極體之製造方法及發光二極體
KR101136063B1 (ko) 2010-11-10 2012-04-18 전북대학교산학협력단 발광소자 및 그 제조방법
JP5854419B2 (ja) * 2011-03-18 2016-02-09 国立大学法人山口大学 多波長発光素子及びその製造方法
KR20130066870A (ko) 2011-12-13 2013-06-21 삼성전자주식회사 반도체 발광소자
KR101278063B1 (ko) * 2012-02-06 2013-06-24 전남대학교산학협력단 나노포러스 구조를 이용한 반도체소자 분리방법
WO2013140320A1 (en) 2012-03-19 2013-09-26 Koninklijke Philips N.V. Light emitting device grown on a silicon substrate
JP2014127708A (ja) 2012-12-27 2014-07-07 Toshiba Corp 半導体発光素子及び半導体発光素子の製造方法
WO2014197799A1 (en) 2013-06-07 2014-12-11 Glo-Usa, Inc. Multicolor led and method of fabricating thereof
KR101452801B1 (ko) 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US10418519B2 (en) 2015-12-22 2019-09-17 Apple Inc. LED sidewall processing to mitigate non-radiative recombination
KR20180133436A (ko) 2016-05-04 2018-12-14 글로 에이비 상이한 색상의 led를 포함하는 일체형 다색 직시형 디스플레이와 이의 제조 방법
WO2018063391A1 (en) * 2016-09-30 2018-04-05 Intel Corporation High performance light emitting diode and monolithic multi-color pixel
EP3529838B1 (en) 2016-10-24 2022-02-23 Nanosys, Inc. Indium gallium nitride red light emitting diode and method of making thereof
US10708995B2 (en) * 2017-05-12 2020-07-07 The Regents Of The University Of Michigan Color mixing monolithically integrated light-emitting diode pixels
US20200152841A1 (en) * 2017-07-31 2020-05-14 Yale University Nanoporous micro-led devices and methods for making
US10651357B2 (en) 2017-08-03 2020-05-12 Cree, Inc. High density pixelated-led chips and chip array devices
JP7062757B2 (ja) * 2017-09-27 2022-05-06 ケンブリッジ エンタープライズ リミテッド 材料および半導体構造を多孔質化する方法
US11005004B2 (en) * 2017-10-20 2021-05-11 Korea Advanced Institute Of Science And Technology Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same
CN107946417B (zh) 2017-11-29 2019-09-03 北京工业大学 一种全色微型led阵列垂直外延制备方法
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN109768135B (zh) 2018-12-27 2020-06-19 武汉大学 全色堆栈式倒装RGB Micro-LED芯片阵列及其制备方法
FR3094568B1 (fr) * 2019-03-29 2022-04-22 Commissariat Energie Atomique Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles
WO2021150688A1 (en) * 2020-01-21 2021-07-29 The Regents Of The University Of California Iii-nitride p-n junction device using porous layer
GB2592017B (en) * 2020-02-11 2022-08-03 Plessey Semiconductors Ltd Multicolour light emitting structure
WO2022099500A1 (zh) * 2020-11-11 2022-05-19 苏州晶湛半导体有限公司 一种发光结构及其制备方法

Also Published As

Publication number Publication date
CN116325189A (zh) 2023-06-23
US20230378237A1 (en) 2023-11-23
TWI905240B (zh) 2025-11-21
CN116210091A (zh) 2023-06-02
KR20230058639A (ko) 2023-05-03
EP4193394A1 (en) 2023-06-14
WO2022029433A1 (en) 2022-02-10
WO2022029437A1 (en) 2022-02-10
US12701846B2 (en) 2026-08-04
US20230290806A1 (en) 2023-09-14
KR20230058637A (ko) 2023-05-03
TW202224205A (zh) 2022-06-16
JP7835731B2 (ja) 2026-03-25
CN116325190A (zh) 2023-06-23
WO2022029436A1 (en) 2022-02-10
EP4193391A1 (en) 2023-06-14
TWI912341B (zh) 2026-01-21
JP2023536363A (ja) 2023-08-24
KR20230060507A (ko) 2023-05-04
TW202221937A (zh) 2022-06-01
JP7887885B2 (ja) 2026-07-10
JP2023536362A (ja) 2023-08-24
US20240014348A1 (en) 2024-01-11
EP4193393A1 (en) 2023-06-14
JP2023536360A (ja) 2023-08-24

Similar Documents

Publication Publication Date Title
US12568717B2 (en) Red LED and method of manufacture
TWI912341B (zh) Led裝置及製造方法
EP3360168B1 (en) Iii-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
KR101358701B1 (ko) 여러 파장의 광을 방출하도록 구성된 반도체 발광 장치
US12563866B2 (en) LED and method of manufacture
CN101853909A (zh) Ⅲ族氮化物化合物半导体发光元件及其制造方法
JP2026009981A (ja) マイクロｌｅｄ及びその製造方法
TWI829038B (zh) 電壓可控的單片原生ｒｇｂ陣列
TW202445828A (zh) 具有電氣互連層之光電裝置
TW202226617A (zh) 紅led及製造方法
KR101319218B1 (ko) 기판의 분리 방법