JP2023509943A5 - - Google Patents

Info

Publication number
JP2023509943A5
JP2023509943A5 JP2022540837A JP2022540837A JP2023509943A5 JP 2023509943 A5 JP2023509943 A5 JP 2023509943A5 JP 2022540837 A JP2022540837 A JP 2022540837A JP 2022540837 A JP2022540837 A JP 2022540837A JP 2023509943 A5 JP2023509943 A5 JP 2023509943A5
Authority
JP
Japan
Prior art keywords
chamber
inner chamber
reaction chamber
plasma
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022540837A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023509943A (ja
Filing date
Publication date
Priority claimed from FI20205023A external-priority patent/FI129609B/en
Application filed filed Critical
Publication of JP2023509943A publication Critical patent/JP2023509943A/ja
Publication of JP2023509943A5 publication Critical patent/JP2023509943A5/ja
Pending legal-status Critical Current

Links

JP2022540837A 2020-01-10 2020-12-21 基板処理装置及び方法 Pending JP2023509943A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20205023 2020-01-10
FI20205023A FI129609B (en) 2020-01-10 2020-01-10 Substrate processing apparatus
PCT/FI2020/050861 WO2021140270A1 (en) 2020-01-10 2020-12-21 Substrate processing apparatus and method

Publications (2)

Publication Number Publication Date
JP2023509943A JP2023509943A (ja) 2023-03-10
JP2023509943A5 true JP2023509943A5 (https=) 2023-11-06

Family

ID=74003816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022540837A Pending JP2023509943A (ja) 2020-01-10 2020-12-21 基板処理装置及び方法

Country Status (10)

Country Link
US (2) US11004707B1 (https=)
EP (1) EP4087955A1 (https=)
JP (1) JP2023509943A (https=)
KR (1) KR20220143019A (https=)
CN (1) CN113106419A (https=)
CA (1) CA3165295A1 (https=)
FI (1) FI129609B (https=)
IL (1) IL294524B2 (https=)
TW (1) TWI886187B (https=)
WO (1) WO2021140270A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220129598A (ko) * 2020-01-22 2022-09-23 어플라이드 머티어리얼스, 인코포레이티드 Oled 층 두께 및 도펀트 농도의 인-라인 모니터링
FI130021B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230019511A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company Limited Dual ampoule separator plate and method
JP7743379B2 (ja) * 2021-09-06 2025-09-24 東京エレクトロン株式会社 基板処理装置及び基板処理装置のメンテナンス方法
US20250095967A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Plasma source with multiple extraction apertures
CN117467976B (zh) * 2023-10-31 2024-05-17 北京北方华创微电子装备有限公司 用于气相沉积工艺腔室的上衬环、下衬环、进气衬体和内衬
TWI886791B (zh) * 2024-02-07 2025-06-11 呈睿國際股份有限公司 半導體電漿設備及其負壓排氣裝置

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156194U (https=) 1981-03-30 1982-10-01
JPH0747962Y2 (ja) 1989-02-20 1995-11-01 株式会社ピーエフユー 停電補償形スイッチング・レギュレータ
JPH03257182A (ja) * 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
JP3130374B2 (ja) * 1992-06-17 2001-01-31 株式会社日立製作所 半導体装置の製造方法
JPH07310185A (ja) * 1994-05-12 1995-11-28 Hitachi Ltd Cvdガス供給装置
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020078893A1 (en) * 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP2002101664A (ja) 2000-09-20 2002-04-05 Yokogawa Electric Corp 絶縁型多チャンネル電源回路
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US7022605B2 (en) 2002-11-12 2006-04-04 Micron Technology, Inc. Atomic layer deposition methods
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
KR100988085B1 (ko) 2003-06-24 2010-10-18 삼성전자주식회사 고밀도 플라즈마 처리 장치
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US20050066902A1 (en) 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for plasma processing
DE102005002142A1 (de) 2005-01-12 2006-07-20 Forschungsverbund Berlin E.V. Mikroplasmaarray
GB0510051D0 (en) 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
KR100724571B1 (ko) 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
KR101014858B1 (ko) 2006-03-30 2011-02-15 미쯔이 죠센 가부시키가이샤 플라즈마 원자층 성장 방법 및 장치
KR20070111383A (ko) * 2006-05-16 2007-11-21 에이에스엠 저펜 가부시기가이샤 플라즈마 차단 절연판이 장착된 플라즈마 cvd 장치
US9157151B2 (en) * 2006-06-05 2015-10-13 Applied Materials, Inc. Elimination of first wafer effect for PECVD films
US8980049B2 (en) * 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
KR101012345B1 (ko) 2008-08-26 2011-02-09 포항공과대학교 산학협력단 저 전력 휴대용 마이크로파 플라즈마 발생기
EP2373832A1 (en) 2008-12-18 2011-10-12 The University Of Queensland Process for the production of chemicals
KR20120023030A (ko) 2009-04-28 2012-03-12 트러스티즈 오브 터프츠 칼리지 마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들
WO2010129901A2 (en) 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
US8323521B2 (en) 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US9004006B2 (en) 2010-04-28 2015-04-14 Applied Materials, Inc. Process chamber lid design with built-in plasma source for short lifetime species
KR20130093080A (ko) 2010-06-25 2013-08-21 어플라이드 머티어리얼스, 인코포레이티드 이온 전류가 감소된 예비-세정 챔버
JP6104817B2 (ja) 2010-12-30 2017-03-29 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated マイクロ波プラズマを用いた薄膜堆積
JP5885830B2 (ja) 2011-04-07 2016-03-16 ピコサン オーワイPicosun Oy プラズマ源を有する堆積反応炉
US9111728B2 (en) * 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
CN104081596B (zh) 2011-09-29 2016-12-28 施洛伊尼格控股有限公司 用于用缆线套管装配缆线的方法和用于缆线处理设备的密封件或类似的缆线装配部件的转移单元
US20130105085A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Plasma reactor with chamber wall temperature control
KR101283571B1 (ko) 2012-03-12 2013-07-08 피에스케이 주식회사 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법
US9165771B2 (en) 2013-04-04 2015-10-20 Tokyo Electron Limited Pulsed gas plasma doping method and apparatus
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
WO2015187389A2 (en) 2014-05-23 2015-12-10 Board Of Trustees Of Michigan State University Methods and apparatus for microwave plasma assisted chemical vapor deposition reactors
JP6001015B2 (ja) * 2014-07-04 2016-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
US20160068961A1 (en) * 2014-09-05 2016-03-10 Aixtron Se Method and Apparatus For Growing Binary, Ternary and Quaternary Materials on a Substrate
KR102264257B1 (ko) * 2014-12-30 2021-06-14 삼성전자주식회사 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법
JP6625891B2 (ja) * 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
CN107306473B (zh) 2016-04-25 2019-04-30 中微半导体设备(上海)股份有限公司 一种半导体处理装置及处理基片的方法
EP3309815B1 (de) 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
US11725279B2 (en) * 2017-02-08 2023-08-15 Picosun Oy Deposition or cleaning apparatus with movable structure
JP7235678B2 (ja) 2017-05-01 2023-03-08 アプライド マテリアルズ インコーポレイテッド 真空分離及び前処理環境を伴う高圧アニールチャンバ
US11222769B2 (en) 2017-05-26 2022-01-11 Applied Materials, Inc. Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
KR102449621B1 (ko) 2017-08-22 2022-09-30 삼성전자주식회사 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치
US20190119815A1 (en) 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering

Similar Documents

Publication Publication Date Title
JP2023509943A5 (https=)
JP5982758B2 (ja) マイクロ波照射装置
KR100602481B1 (ko) 열 매체 순환 장치 및 이것을 이용한 열처리 장치
US20100212594A1 (en) Substrate mounting mechanism and substrate processing apparatus having same
KR102042612B1 (ko) 반도체 프로세싱에서 엣지 링의 열 관리
KR100902330B1 (ko) 반도체공정장치
TWI886187B (zh) 基材處理設備
JP2004529272A (ja) 可動シャッタを有するリアクタ
KR20210151042A (ko) 성막 장치
US11714356B2 (en) Bake unit and apparatus for treating substrate
KR20150127059A (ko) 소수화 처리 장치, 소수화 처리 방법 및 소수화 처리용 기록 매체
JP2023036566A (ja) 基板処理装置
KR20110017139A (ko) 기판 처리 장치
KR100856153B1 (ko) 기판 탑재 기구 및 기판 처리 장치
JP4378014B2 (ja) 反応性ガスを利用する真空処理装置
KR101458963B1 (ko) 급속 열처리장치용 히터장치
KR102119681B1 (ko) 리프트 핀 어셈블리 및 이를 갖는 베이크 장치
US12431384B2 (en) Substrate processing apparatus
JP4718054B2 (ja) 縦型熱処理装置
KR101745970B1 (ko) 열처리장치
KR20180072572A (ko) 기판 처리 장치 및 기판 처리 방법
JP2018157025A (ja) 基板処理装置
CN115069518A (zh) 紫外固化装置、衬底处理设备及衬底处理方法
KR20170060934A (ko) 기판처리장치
KR102820818B1 (ko) 기판 처리 장치