KR20220143019A - 기판 프로세싱 장치 및 방법 - Google Patents

기판 프로세싱 장치 및 방법 Download PDF

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KR20220143019A
KR20220143019A KR1020227026989A KR20227026989A KR20220143019A KR 20220143019 A KR20220143019 A KR 20220143019A KR 1020227026989 A KR1020227026989 A KR 1020227026989A KR 20227026989 A KR20227026989 A KR 20227026989A KR 20220143019 A KR20220143019 A KR 20220143019A
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South Korea
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chamber
inner chamber
plasma
certain embodiments
processing apparatus
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KR1020227026989A
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Korean (ko)
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바이노 킬피
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피코순 오와이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H01J37/32431—Constructional details of the reactor
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220129598A (ko) * 2020-01-22 2022-09-23 어플라이드 머티어리얼스, 인코포레이티드 Oled 층 두께 및 도펀트 농도의 인-라인 모니터링
FI130021B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230019511A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company Limited Dual ampoule separator plate and method
JP7743379B2 (ja) * 2021-09-06 2025-09-24 東京エレクトロン株式会社 基板処理装置及び基板処理装置のメンテナンス方法
US20250095967A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Plasma source with multiple extraction apertures
CN117467976B (zh) * 2023-10-31 2024-05-17 北京北方华创微电子装备有限公司 用于气相沉积工艺腔室的上衬环、下衬环、进气衬体和内衬
TWI886791B (zh) * 2024-02-07 2025-06-11 呈睿國際股份有限公司 半導體電漿設備及其負壓排氣裝置

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156194U (https=) 1981-03-30 1982-10-01
JPH0747962Y2 (ja) 1989-02-20 1995-11-01 株式会社ピーエフユー 停電補償形スイッチング・レギュレータ
JPH03257182A (ja) * 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
JP3130374B2 (ja) * 1992-06-17 2001-01-31 株式会社日立製作所 半導体装置の製造方法
JPH07310185A (ja) * 1994-05-12 1995-11-28 Hitachi Ltd Ｃｖｄガス供給装置
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020078893A1 (en) * 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP2002101664A (ja) 2000-09-20 2002-04-05 Yokogawa Electric Corp 絶縁型多チャンネル電源回路
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US7022605B2 (en) 2002-11-12 2006-04-04 Micron Technology, Inc. Atomic layer deposition methods
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
KR100988085B1 (ko) 2003-06-24 2010-10-18 삼성전자주식회사 고밀도 플라즈마 처리 장치
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US20050066902A1 (en) 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for plasma processing
DE102005002142A1 (de) 2005-01-12 2006-07-20 Forschungsverbund Berlin E.V. Mikroplasmaarray
GB0510051D0 (en) 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
KR100724571B1 (ko) 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
KR101014858B1 (ko) 2006-03-30 2011-02-15 미쯔이 죠센 가부시키가이샤 플라즈마 원자층 성장 방법 및 장치
KR20070111383A (ko) * 2006-05-16 2007-11-21 에이에스엠 저펜 가부시기가이샤 플라즈마 차단 절연판이 장착된 플라즈마 ｃｖｄ 장치
US9157151B2 (en) * 2006-06-05 2015-10-13 Applied Materials, Inc. Elimination of first wafer effect for PECVD films
US8980049B2 (en) * 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
KR101012345B1 (ko) 2008-08-26 2011-02-09 포항공과대학교 산학협력단 저 전력 휴대용 마이크로파 플라즈마 발생기
EP2373832A1 (en) 2008-12-18 2011-10-12 The University Of Queensland Process for the production of chemicals
KR20120023030A (ko) 2009-04-28 2012-03-12 트러스티즈 오브 터프츠 칼리지 마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들
WO2010129901A2 (en) 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
US8323521B2 (en) 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US9004006B2 (en) 2010-04-28 2015-04-14 Applied Materials, Inc. Process chamber lid design with built-in plasma source for short lifetime species
KR20130093080A (ko) 2010-06-25 2013-08-21 어플라이드 머티어리얼스, 인코포레이티드 이온 전류가 감소된 예비-세정 챔버
JP6104817B2 (ja) 2010-12-30 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを用いた薄膜堆積
JP5885830B2 (ja) 2011-04-07 2016-03-16 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ プラズマ源を有する堆積反応炉
US9111728B2 (en) * 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
CN104081596B (zh) 2011-09-29 2016-12-28 施洛伊尼格控股有限公司 用于用缆线套管装配缆线的方法和用于缆线处理设备的密封件或类似的缆线装配部件的转移单元
US20130105085A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Plasma reactor with chamber wall temperature control
KR101283571B1 (ko) 2012-03-12 2013-07-08 피에스케이 주식회사 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법
US9165771B2 (en) 2013-04-04 2015-10-20 Tokyo Electron Limited Pulsed gas plasma doping method and apparatus
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
WO2015187389A2 (en) 2014-05-23 2015-12-10 Board Of Trustees Of Michigan State University Methods and apparatus for microwave plasma assisted chemical vapor deposition reactors
JP6001015B2 (ja) * 2014-07-04 2016-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
US20160068961A1 (en) * 2014-09-05 2016-03-10 Aixtron Se Method and Apparatus For Growing Binary, Ternary and Quaternary Materials on a Substrate
KR102264257B1 (ko) * 2014-12-30 2021-06-14 삼성전자주식회사 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법
JP6625891B2 (ja) * 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
CN107306473B (zh) 2016-04-25 2019-04-30 中微半导体设备(上海)股份有限公司 一种半导体处理装置及处理基片的方法
EP3309815B1 (de) 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
US11725279B2 (en) * 2017-02-08 2023-08-15 Picosun Oy Deposition or cleaning apparatus with movable structure
JP7235678B2 (ja) 2017-05-01 2023-03-08 アプライド マテリアルズ インコーポレイテッド 真空分離及び前処理環境を伴う高圧アニールチャンバ
US11222769B2 (en) 2017-05-26 2022-01-11 Applied Materials, Inc. Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
KR102449621B1 (ko) 2017-08-22 2022-09-30 삼성전자주식회사 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치
US20190119815A1 (en) 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering

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