JP2023504353A5 - - Google Patents

Info

Publication number
JP2023504353A5
JP2023504353A5 JP2022527095A JP2022527095A JP2023504353A5 JP 2023504353 A5 JP2023504353 A5 JP 2023504353A5 JP 2022527095 A JP2022527095 A JP 2022527095A JP 2022527095 A JP2022527095 A JP 2022527095A JP 2023504353 A5 JP2023504353 A5 JP 2023504353A5
Authority
JP
Japan
Prior art keywords
layer
oxygen radicals
substrate
fluid layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022527095A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023504353A (ja
JP7623374B2 (ja
Filing date
Publication date
Priority claimed from US16/708,026 external-priority patent/US20210175075A1/en
Application filed filed Critical
Publication of JP2023504353A publication Critical patent/JP2023504353A/ja
Publication of JP2023504353A5 publication Critical patent/JP2023504353A5/ja
Application granted granted Critical
Publication of JP7623374B2 publication Critical patent/JP7623374B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022527095A 2019-12-09 2020-11-30 酸素ラジカル支援による誘電体膜の高密度化 Active JP7623374B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/708,026 2019-12-09
US16/708,026 US20210175075A1 (en) 2019-12-09 2019-12-09 Oxygen radical assisted dielectric film densification
PCT/US2020/062540 WO2021118815A1 (en) 2019-12-09 2020-11-30 Oxygen radical assisted dielectric film densification

Publications (3)

Publication Number Publication Date
JP2023504353A JP2023504353A (ja) 2023-02-03
JP2023504353A5 true JP2023504353A5 (enExample) 2023-12-07
JP7623374B2 JP7623374B2 (ja) 2025-01-28

Family

ID=76209063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022527095A Active JP7623374B2 (ja) 2019-12-09 2020-11-30 酸素ラジカル支援による誘電体膜の高密度化

Country Status (6)

Country Link
US (1) US20210175075A1 (enExample)
JP (1) JP7623374B2 (enExample)
KR (1) KR102907137B1 (enExample)
CN (1) CN114730697A (enExample)
TW (1) TW202124764A (enExample)
WO (1) WO2021118815A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10755922B2 (en) * 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
CN114068546B (zh) * 2020-08-05 2024-06-07 长鑫存储技术有限公司 半导体结构及其制作方法
US11551926B2 (en) * 2021-01-22 2023-01-10 Micron Technology, Inc. Methods of forming a microelectronic device, and related systems and additional methods
JP2023130026A (ja) * 2022-03-07 2023-09-20 東京エレクトロン株式会社 埋込方法及び処理システム
KR20260025074A (ko) * 2023-06-07 2026-02-23 가부시키가이샤 코쿠사이 엘렉트릭 처리 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221526B2 (ja) * 2003-03-26 2009-02-12 キヤノンアネルバ株式会社 金属酸化物を基板表面上に形成する成膜方法
US7989365B2 (en) * 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101030997B1 (ko) * 2009-10-16 2011-04-25 주식회사 아토 증착 장치 및 이를 이용한 갭필 방법
WO2011084752A2 (en) * 2010-01-07 2011-07-14 Applied Materials, Inc. In-situ ozone cure for radical-component cvd
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9847222B2 (en) * 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US20150118863A1 (en) * 2013-10-25 2015-04-30 Lam Research Corporation Methods and apparatus for forming flowable dielectric films having low porosity
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9412581B2 (en) * 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
TWI670756B (zh) * 2014-12-22 2019-09-01 美商應用材料股份有限公司 藉由沉積調整來解決ｆｃｖｄ的線條彎曲
US9777378B2 (en) * 2015-01-07 2017-10-03 Applied Materials, Inc. Advanced process flow for high quality FCVD films
WO2018212999A1 (en) * 2017-05-13 2018-11-22 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment proceses for high quality gap fill solutions
US10600684B2 (en) * 2017-12-19 2020-03-24 Applied Materials, Inc. Ultra-thin diffusion barriers
KR20200104923A (ko) * 2018-01-26 2020-09-04 어플라이드 머티어리얼스, 인코포레이티드 실리콘 질화물 박막들을 위한 처리 방법들
US12266574B2 (en) * 2021-08-06 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Flowable chemical vapor deposition (FCVD) using multi-step anneal treatment and devices thereof

Similar Documents

Publication Publication Date Title
CN103168342B (zh) 用于射频或电力应用的电子器件和制造这种器件的工艺
US10615139B2 (en) Semiconductor device including built-in crack-arresting film structure
KR102762841B1 (ko) 메모리 스트링에 포켓 구조를 갖는 3차원 메모리 디바이스 및 그 방법
KR100909562B1 (ko) 반도체 소자 및 그 제조방법
CN105810681B (zh) 堆叠器件以及相关的布局结构
US7399686B2 (en) Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate
US12341099B2 (en) Semiconductor backside transistor integration with backside power delivery network
US8901713B2 (en) Extremely thin semiconductor-on-insulator with back gate contact
US11587824B2 (en) Method for manufacturing semiconductor structure
CN113327905B (zh) 半导体装置结构和其形成方法
CN102129966A (zh) 在半导体结构中形成导热区的方法以及由此获得的结构
TWI752338B (zh) 用於dram sti 主動切割圖案化的多色方法
JP2007513517A5 (enExample)
JP2015510292A (ja) モノリシック集積したｃｍｏｓおよび音波装置
CN111540677A (zh) 一种三层阶梯状沟槽晶体管的制造工艺
CN102132396A (zh) 对刻蚀后的半导体结构的钝化
CN113206086A (zh) 半导体装置及形成半导体装置的方法
CN110383472B (zh) 具有气隙和保护层的ic结构及其制造方法
TW202147607A (zh) 互連電路製造用結晶介電質系統
EP1850373B1 (en) Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device
US9105518B2 (en) Method of large-area circuit layout recognition
GB2296374A (en) Fabricating semiconductor devices
CN118899257A (zh) 一种半导体结构及其形成方法
CN121218597A (zh) 半导体器件及其制造方法
TW202441579A (zh) 絕緣體上壓電（ｐｏｉ）底材及用於製作絕緣體上壓電（ｐｏｉ）底材之方法