CN114730697A - 氧自由基辅助的介电膜致密化 - Google Patents

氧自由基辅助的介电膜致密化 Download PDF

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Publication number
CN114730697A
CN114730697A CN202080078830.XA CN202080078830A CN114730697A CN 114730697 A CN114730697 A CN 114730697A CN 202080078830 A CN202080078830 A CN 202080078830A CN 114730697 A CN114730697 A CN 114730697A
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silicon
containing material
layer
flowable
oxygen radicals
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Chinese (zh)
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沙善·夏尔马
刘炜
孙颙
普拉卡·普拉卡什·杰哈
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Applied Materials Inc
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Applied Materials Inc
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
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    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/20—Diffusion for doping of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
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    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
CN202080078830.XA 2019-12-09 2020-11-30 氧自由基辅助的介电膜致密化 Pending CN114730697A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/708,026 2019-12-09
US16/708,026 US20210175075A1 (en) 2019-12-09 2019-12-09 Oxygen radical assisted dielectric film densification
PCT/US2020/062540 WO2021118815A1 (en) 2019-12-09 2020-11-30 Oxygen radical assisted dielectric film densification

Publications (1)

Publication Number Publication Date
CN114730697A true CN114730697A (zh) 2022-07-08

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US (1) US20210175075A1 (enExample)
JP (1) JP7623374B2 (enExample)
KR (1) KR102907137B1 (enExample)
CN (1) CN114730697A (enExample)
TW (1) TW202124764A (enExample)
WO (1) WO2021118815A1 (enExample)

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US10755922B2 (en) * 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
CN114068546B (zh) * 2020-08-05 2024-06-07 长鑫存储技术有限公司 半导体结构及其制作方法
US11551926B2 (en) * 2021-01-22 2023-01-10 Micron Technology, Inc. Methods of forming a microelectronic device, and related systems and additional methods
JP2023130026A (ja) * 2022-03-07 2023-09-20 東京エレクトロン株式会社 埋込方法及び処理システム
KR20260025074A (ko) * 2023-06-07 2026-02-23 가부시키가이샤 코쿠사이 엘렉트릭 처리 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램

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US20040191426A1 (en) * 2003-03-26 2004-09-30 Anelva Corporation Film-forming method for forming metal oxide on substrate surface
US20110045676A1 (en) * 2009-08-18 2011-02-24 Applied Materials, Inc. Remote plasma source seasoning
KR20110041709A (ko) * 2009-10-16 2011-04-22 주식회사 아토 증착 장치 및 이를 이용한 갭필 방법
CN102714156A (zh) * 2010-01-07 2012-10-03 应用材料公司 自由基成分cvd的原位臭氧固化
US20130230987A1 (en) * 2012-03-05 2013-09-05 Nerissa Draeger Flowable oxide film with tunable wet etch rate
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
TW201529883A (zh) * 2013-10-25 2015-08-01 蘭姆研究公司 用以形成具有低孔隙率之可流動的介電膜之方法及設備
TW201532188A (zh) * 2013-10-25 2015-08-16 蘭姆研究公司 基板表面上的可流動介電質沉積用處理
US20150262869A1 (en) * 2014-03-11 2015-09-17 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
US20160194758A1 (en) * 2015-01-07 2016-07-07 Applied Materials, Inc. Advanced process flow for high quality fcvd films
US20180330980A1 (en) * 2017-05-13 2018-11-15 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment processes for high quality gap fill solutions
US20230042726A1 (en) * 2021-08-06 2023-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Flowable Chemical Vapor Deposition (FcvD) Using Multi-Step Anneal Treatment and Devices Thereof

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TWI670756B (zh) * 2014-12-22 2019-09-01 美商應用材料股份有限公司 藉由沉積調整來解決ｆｃｖｄ的線條彎曲
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KR20200104923A (ko) * 2018-01-26 2020-09-04 어플라이드 머티어리얼스, 인코포레이티드 실리콘 질화물 박막들을 위한 처리 방법들

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US20040191426A1 (en) * 2003-03-26 2004-09-30 Anelva Corporation Film-forming method for forming metal oxide on substrate surface
US20110045676A1 (en) * 2009-08-18 2011-02-24 Applied Materials, Inc. Remote plasma source seasoning
TW201123302A (en) * 2009-08-18 2011-07-01 Applied Materials Inc Remote plasma source seasoning
KR20110041709A (ko) * 2009-10-16 2011-04-22 주식회사 아토 증착 장치 및 이를 이용한 갭필 방법
CN102714156A (zh) * 2010-01-07 2012-10-03 应用材料公司 自由基成分cvd的原位臭氧固化
US20130230987A1 (en) * 2012-03-05 2013-09-05 Nerissa Draeger Flowable oxide film with tunable wet etch rate
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
TW201529883A (zh) * 2013-10-25 2015-08-01 蘭姆研究公司 用以形成具有低孔隙率之可流動的介電膜之方法及設備
TW201532188A (zh) * 2013-10-25 2015-08-16 蘭姆研究公司 基板表面上的可流動介電質沉積用處理
US20150262869A1 (en) * 2014-03-11 2015-09-17 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
US20160194758A1 (en) * 2015-01-07 2016-07-07 Applied Materials, Inc. Advanced process flow for high quality fcvd films
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US20180330980A1 (en) * 2017-05-13 2018-11-15 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment processes for high quality gap fill solutions
US20230042726A1 (en) * 2021-08-06 2023-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Flowable Chemical Vapor Deposition (FcvD) Using Multi-Step Anneal Treatment and Devices Thereof

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TW202124764A (zh) 2021-07-01
WO2021118815A1 (en) 2021-06-17
JP2023504353A (ja) 2023-02-03
KR20220111258A (ko) 2022-08-09
JP7623374B2 (ja) 2025-01-28
US20210175075A1 (en) 2021-06-10
KR102907137B1 (ko) 2025-12-31

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