JP2023051837A - ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物 - Google Patents

ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物 Download PDF

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JP2023051837A
JP2023051837A JP2022154811A JP2022154811A JP2023051837A JP 2023051837 A JP2023051837 A JP 2023051837A JP 2022154811 A JP2022154811 A JP 2022154811A JP 2022154811 A JP2022154811 A JP 2022154811A JP 2023051837 A JP2023051837 A JP 2023051837A
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Japan
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substituted
unsubstituted
group
alkyl
aryl
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JP2023051837A5 (enExample
Inventor
アカド、エマド
Aqad Emad
パク、ジョンクン
Jong Keun Park
シー． ポペレ、ブーシャン
C Popere Bhooshan
ツイ、リー
Cui Li
ツェン、インチエ
Yinjie Cen
リー、チョンボン
Choong-Bong Lee
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Publication of JP2023051837A publication Critical patent/JP2023051837A/ja
Publication of JP2023051837A5 publication Critical patent/JP2023051837A5/ja
Priority to JP2024093304A priority Critical patent/JP2024123050A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/94—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/84—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022154811A 2021-09-30 2022-09-28 ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物 Pending JP2023051837A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024093304A JP2024123050A (ja) 2021-09-30 2024-06-07 ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/490,923 US20230103685A1 (en) 2021-09-30 2021-09-30 Iodine-containing acid cleavable compounds, polymers derived therefrom, and photoresist compositions
US17/490,923 2021-09-30

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JP2024093304A Division JP2024123050A (ja) 2021-09-30 2024-06-07 ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物

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JP2023051837A true JP2023051837A (ja) 2023-04-11
JP2023051837A5 JP2023051837A5 (enExample) 2024-01-10

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JP2024093304A Pending JP2024123050A (ja) 2021-09-30 2024-06-07 ヨウ素含有酸開裂性化合物、それから誘導されるポリマー、及びフォトレジスト組成物

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US (1) US20230103685A1 (enExample)
JP (2) JP2023051837A (enExample)
KR (1) KR20230047027A (enExample)
CN (1) CN115894243B (enExample)
TW (1) TW202315858A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210520A1 (ja) * 2022-04-26 2023-11-02 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び化合物

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230314944A1 (en) * 2022-03-30 2023-10-05 Shin-Etsu Chemical Co., Ltd. Positive resist composition and pattern forming process

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JP2000122291A (ja) * 1998-10-09 2000-04-28 Mitsubishi Electric Corp 化学増幅レジスト用材料、感光性樹脂組成物および該組成物を半導体装置の製造に使用する方法
JP2019052294A (ja) * 2017-09-13 2019-04-04 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
WO2020137935A1 (ja) * 2018-12-27 2020-07-02 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、パターン形成方法、及び化合物の製造方法
WO2021029395A1 (ja) * 2019-08-09 2021-02-18 三菱瓦斯化学株式会社 化合物、重合体、組成物、膜形成用組成物、パターン形成方法、絶縁膜の形成方法及び化合物の製造方法、並びにヨウ素含有ビニルポリマーおよびそのアセチル化誘導体の製造方法
JP2021175792A (ja) * 2020-04-28 2021-11-04 信越化学工業株式会社 ヨウ素化芳香族カルボン酸型ペンダント基含有ポリマー、レジスト材料及びパターン形成方法
JP2021188040A (ja) * 2020-06-01 2021-12-13 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2022042970A (ja) * 2020-09-03 2022-03-15 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
WO2022138670A1 (ja) * 2020-12-21 2022-06-30 三菱瓦斯化学株式会社 化合物、重合体、組成物、膜形成用組成物、パターンの形成方法、絶縁膜の形成方法及び化合物の製造方法

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JP5793389B2 (ja) * 2011-09-30 2015-10-14 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
US10495968B2 (en) * 2017-06-15 2019-12-03 Rohm And Haas Electronic Materials Llc Iodine-containing polymers for chemically amplified resist compositions
JP7031537B2 (ja) * 2018-09-05 2022-03-08 信越化学工業株式会社 スルホニウム化合物、ポジ型レジスト組成物、及びレジストパターン形成方法
JP7517106B2 (ja) * 2019-12-11 2024-07-17 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法
JP7659384B2 (ja) * 2019-12-18 2025-04-09 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
CN115769146A (zh) * 2020-05-29 2023-03-07 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、图案形成方法、抗蚀剂膜、电子器件的制造方法、化合物、化合物的制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122291A (ja) * 1998-10-09 2000-04-28 Mitsubishi Electric Corp 化学増幅レジスト用材料、感光性樹脂組成物および該組成物を半導体装置の製造に使用する方法
JP2019052294A (ja) * 2017-09-13 2019-04-04 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
WO2020137935A1 (ja) * 2018-12-27 2020-07-02 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、パターン形成方法、及び化合物の製造方法
WO2021029395A1 (ja) * 2019-08-09 2021-02-18 三菱瓦斯化学株式会社 化合物、重合体、組成物、膜形成用組成物、パターン形成方法、絶縁膜の形成方法及び化合物の製造方法、並びにヨウ素含有ビニルポリマーおよびそのアセチル化誘導体の製造方法
JP2021175792A (ja) * 2020-04-28 2021-11-04 信越化学工業株式会社 ヨウ素化芳香族カルボン酸型ペンダント基含有ポリマー、レジスト材料及びパターン形成方法
JP2021188040A (ja) * 2020-06-01 2021-12-13 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2022042970A (ja) * 2020-09-03 2022-03-15 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
WO2022138670A1 (ja) * 2020-12-21 2022-06-30 三菱瓦斯化学株式会社 化合物、重合体、組成物、膜形成用組成物、パターンの形成方法、絶縁膜の形成方法及び化合物の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210520A1 (ja) * 2022-04-26 2023-11-02 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び化合物

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KR20230047027A (ko) 2023-04-06
CN115894243B (zh) 2025-08-22
JP2024123050A (ja) 2024-09-10
US20230103685A1 (en) 2023-04-06
TW202315858A (zh) 2023-04-16

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