JP2023024959A5 - - Google Patents

Download PDF

Info

Publication number
JP2023024959A5
JP2023024959A5 JP2022125996A JP2022125996A JP2023024959A5 JP 2023024959 A5 JP2023024959 A5 JP 2023024959A5 JP 2022125996 A JP2022125996 A JP 2022125996A JP 2022125996 A JP2022125996 A JP 2022125996A JP 2023024959 A5 JP2023024959 A5 JP 2023024959A5
Authority
JP
Japan
Prior art keywords
semiconductor wafer
temperature
electrode
manufacturing platform
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022125996A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023024959A (ja
JP7840106B2 (ja
Filing date
Publication date
Priority claimed from US17/397,159 external-priority patent/US12211907B2/en
Application filed filed Critical
Publication of JP2023024959A publication Critical patent/JP2023024959A/ja
Publication of JP2023024959A5 publication Critical patent/JP2023024959A5/ja
Application granted granted Critical
Publication of JP7840106B2 publication Critical patent/JP7840106B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022125996A 2021-08-09 2022-08-08 ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法 Active JP7840106B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/397,159 US12211907B2 (en) 2020-04-06 2021-08-09 Semiconductor manufacturing platform with in-situ electrical bias and methods thereof
US17/397159 2021-08-09

Publications (3)

Publication Number Publication Date
JP2023024959A JP2023024959A (ja) 2023-02-21
JP2023024959A5 true JP2023024959A5 (enExample) 2025-05-23
JP7840106B2 JP7840106B2 (ja) 2026-04-03

Family

ID=85249429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022125996A Active JP7840106B2 (ja) 2021-08-09 2022-08-08 ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法

Country Status (3)

Country Link
JP (1) JP7840106B2 (enExample)
KR (1) KR102971945B1 (enExample)
TW (1) TW202314865A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121096906B (zh) * 2025-04-01 2026-07-17 深圳市鹏芯微集成电路制造有限公司 半导体测温装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226322A (ja) * 1992-02-12 1993-09-03 Sharp Corp 配向性強誘電体薄膜の製造方法
JPH09246260A (ja) * 1996-03-07 1997-09-19 Kokusai Electric Co Ltd プラズマｃｖｄ装置
JPH11209875A (ja) * 1998-01-23 1999-08-03 Shin Etsu Chem Co Ltd カーボン製反応炉および熱分解窒化ホウ素成形体の製造方法
EP1139394A3 (en) 2000-03-30 2006-02-15 International Business Machines Corporation Method and device for electric field assisted anneal
JP2004188368A (ja) * 2002-12-13 2004-07-08 Ube Machinery Corporation Ltd 粉砕方法
JP2008085194A (ja) * 2006-09-28 2008-04-10 Univ Of Tokyo 強誘電体デバイス
US7816152B2 (en) 2007-04-11 2010-10-19 WaferMaster, Inc. In situ, ex situ and inline process monitoring, optimization and fabrication
JP2009218438A (ja) * 2008-03-11 2009-09-24 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014099517A (ja) * 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2021048368A (ja) * 2019-09-20 2021-03-25 キオクシア株式会社 記憶装置

Similar Documents

Publication Publication Date Title
US6781812B2 (en) Chuck equipment
JP4074777B2 (ja) 低温下における半導体フィルムの加熱処理装置
TW202040744A (zh) 局部加熱之多區域基材支撐座
TW201003815A (en) Apparatus for manufacturing semiconductor
CN101523357A (zh) 等离子腔室中用于基板夹持的设备与方法
WO2015188668A1 (zh) 薄膜沉积制备装置和方法
JP2024507802A (ja) 異なるセラミックを用いた静電チャック
JPH11317380A (ja) コバルト付着の方法及び装置
JPH0945756A (ja) 半導体製造装置および製造方法
TW202201461A (zh) 電漿處理裝置、半導體構件及邊緣環
TW200836291A (en) Apparatus and method for substrate clamping in a plasma chamber
KR101081462B1 (ko) 유도가열 방식을 적용한 박막형 화합물 반도체 태양광 소자 제작 장치 및 방법
JPH11111829A (ja) 静電吸着ホットプレート、真空処理装置、及び真空処理方法
CN104681462B (zh) 静电卡盘加热测温电路及等离子体反应装置
JP2001152335A (ja) 真空処理方法及び真空処理装置
JPS63160355A (ja) 静電チヤツク
CN103094155A (zh) 一种半导体器件加工设备
CN114808142A (zh) 用于导电型碳化硅晶片的电流加热装置
KR100794987B1 (ko) 진공 증착기에서 순간 가열 방식의 기판 가열 장치
TW201921578A (zh) 晶片支持裝置
JP2017034042A (ja) ウエハ支持装置
KR102423270B1 (ko) 기판 지지용 보트 및 기판 처리 장치
JP4417660B2 (ja) 誘導加熱による熱処理方法
JP4495687B2 (ja) 静電チャック
RU201717U1 (ru) Подложкодержатель для плазмохимического травления в низкотемпературной индуктивно-связанной плазме