TW202314865A - 具有原位電偏壓的半導體製造平台及其方法 - Google Patents

具有原位電偏壓的半導體製造平台及其方法 Download PDF

Info

Publication number
TW202314865A
TW202314865A TW111129521A TW111129521A TW202314865A TW 202314865 A TW202314865 A TW 202314865A TW 111129521 A TW111129521 A TW 111129521A TW 111129521 A TW111129521 A TW 111129521A TW 202314865 A TW202314865 A TW 202314865A
Authority
TW
Taiwan
Prior art keywords
temperature
semiconductor wafer
manufacturing
semiconductor
electrode
Prior art date
Application number
TW111129521A
Other languages
English (en)
Chinese (zh)
Inventor
蒂娜 Ｈ 特里優索
羅伯特 Ｄ 克拉克
大衛 赫爾利
伊恩 科爾根
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/397,159 external-priority patent/US12211907B2/en
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202314865A publication Critical patent/TW202314865A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW111129521A 2021-08-09 2022-08-05 具有原位電偏壓的半導體製造平台及其方法 TW202314865A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/397,159 US12211907B2 (en) 2020-04-06 2021-08-09 Semiconductor manufacturing platform with in-situ electrical bias and methods thereof
US17/397,159 2021-08-09

Publications (1)

Publication Number Publication Date
TW202314865A true TW202314865A (zh) 2023-04-01

Family

ID=85249429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111129521A TW202314865A (zh) 2021-08-09 2022-08-05 具有原位電偏壓的半導體製造平台及其方法

Country Status (3)

Country Link
JP (1) JP7840106B2 (enExample)
KR (1) KR102971945B1 (enExample)
TW (1) TW202314865A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121096906B (zh) * 2025-04-01 2026-07-17 深圳市鹏芯微集成电路制造有限公司 半导体测温装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226322A (ja) * 1992-02-12 1993-09-03 Sharp Corp 配向性強誘電体薄膜の製造方法
JPH09246260A (ja) * 1996-03-07 1997-09-19 Kokusai Electric Co Ltd プラズマｃｖｄ装置
JPH11209875A (ja) * 1998-01-23 1999-08-03 Shin Etsu Chem Co Ltd カーボン製反応炉および熱分解窒化ホウ素成形体の製造方法
EP1139394A3 (en) 2000-03-30 2006-02-15 International Business Machines Corporation Method and device for electric field assisted anneal
JP2004188368A (ja) * 2002-12-13 2004-07-08 Ube Machinery Corporation Ltd 粉砕方法
JP2008085194A (ja) * 2006-09-28 2008-04-10 Univ Of Tokyo 強誘電体デバイス
US7816152B2 (en) 2007-04-11 2010-10-19 WaferMaster, Inc. In situ, ex situ and inline process monitoring, optimization and fabrication
JP2009218438A (ja) * 2008-03-11 2009-09-24 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014099517A (ja) * 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2021048368A (ja) * 2019-09-20 2021-03-25 キオクシア株式会社 記憶装置

Also Published As

Publication number Publication date
JP2023024959A (ja) 2023-02-21
KR102971945B1 (ko) 2026-06-01
KR20230022817A (ko) 2023-02-16
JP7840106B2 (ja) 2026-04-03

Similar Documents

Publication Publication Date Title
TWI905934B (zh) 半導體裝置製造方法
US11569366B2 (en) Fully depleted SOI transistor with a buried ferroelectric layer in back-gate
US12453137B2 (en) Ferroelectric memory devices having improved ferroelectric properties and methods of making the same
US11837652B2 (en) Semiconductor processing system with in-situ electrical bias and methods thereof
CN102947917B (zh) 通过加工引发的单轴向应变控制介电薄膜内的铁电性
US11177267B2 (en) Semiconductor structure and manufacturing method thereof
TWI455283B (zh) 用於製造包含每單位面積有高電容之電容器之半導體組件之方法
TWI896774B (zh) 半導體裝置
KR19980080005A (ko) 반도체 구조를 형성하는 방법 및 강유전체 메모리 셀
EP3910635A1 (en) Capacitor, method of controlling the same, and transistor including the same
US20250120154A1 (en) Semiconductor Manufacturing Platform with In-Situ Electrical Bias and Methods Thereof
CN103996699A (zh) 包含一层应力产生材料的电路组件及其形成方法
US11894240B2 (en) Semiconductor processing systems with in-situ electrical bias
JP7840106B2 (ja) ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法
US20130214336A1 (en) Method for filling trench with metal layer and semiconductor structure formed by using the same
TWI821915B (zh) 具有原位電偏壓的半導體處理系統
JP2021009893A (ja) トランジスタおよび不揮発性メモリ、トランジスタの製造方法
WO2021206684A1 (en) Semiconductor processing system with in-situ electrical bias and methods thereof
WO2000045429A1 (en) Method for fabricating semiconductor integrated circuit device
JP7727572B2 (ja) 半導体装置およびその製造方法
CN101044608B (zh) 具有掺杂钛酸盐主体的金属-氧化物-半导体
JP2004134507A (ja) 積層絶縁膜を備えた不揮発電界効果型トランジスタ
US20050269598A1 (en) Silicon barrier capacitor device structure
CN120035373A (zh) 半导体结构及其操作方法
JP2001267525A (ja) 強誘電体不揮発性記憶装置