JP7840106B2 - ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法 - Google Patents

ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法

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Publication number
JP7840106B2
JP7840106B2 JP2022125996A JP2022125996A JP7840106B2 JP 7840106 B2 JP7840106 B2 JP 7840106B2 JP 2022125996 A JP2022125996 A JP 2022125996A JP 2022125996 A JP2022125996 A JP 2022125996A JP 7840106 B2 JP7840106 B2 JP 7840106B2
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JP
Japan
Prior art keywords
semiconductor wafer
temperature
electrode
manufacturing platform
annealer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022125996A
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English (en)
Japanese (ja)
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JP2023024959A (ja
JP2023024959A5 (enExample
Inventor
トリヨソ ディーナ
クラーク ロバート
ハーリー デイヴィッド
コルガン イアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Priority claimed from US17/397,159 external-priority patent/US12211907B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2023024959A publication Critical patent/JP2023024959A/ja
Publication of JP2023024959A5 publication Critical patent/JP2023024959A5/ja
Application granted granted Critical
Publication of JP7840106B2 publication Critical patent/JP7840106B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2022125996A 2021-08-09 2022-08-08 ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法 Active JP7840106B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/397,159 US12211907B2 (en) 2020-04-06 2021-08-09 Semiconductor manufacturing platform with in-situ electrical bias and methods thereof
US17/397159 2021-08-09

Publications (3)

Publication Number Publication Date
JP2023024959A JP2023024959A (ja) 2023-02-21
JP2023024959A5 JP2023024959A5 (enExample) 2025-05-23
JP7840106B2 true JP7840106B2 (ja) 2026-04-03

Family

ID=85249429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022125996A Active JP7840106B2 (ja) 2021-08-09 2022-08-08 ｉｎ－ｓｉｔｕ電気バイアスを用いた半導体製造プラットフォームおよびその方法

Country Status (3)

Country Link
JP (1) JP7840106B2 (enExample)
KR (1) KR102971945B1 (enExample)
TW (1) TW202314865A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121096906B (zh) * 2025-04-01 2026-07-17 深圳市鹏芯微集成电路制造有限公司 半导体测温装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004188368A (ja) 2002-12-13 2004-07-08 Ube Machinery Corporation Ltd 粉砕方法
JP2008085194A (ja) 2006-09-28 2008-04-10 Univ Of Tokyo 強誘電体デバイス
JP2009218438A (ja) 2008-03-11 2009-09-24 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014099517A (ja) 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2021048368A (ja) 2019-09-20 2021-03-25 キオクシア株式会社 記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226322A (ja) * 1992-02-12 1993-09-03 Sharp Corp 配向性強誘電体薄膜の製造方法
JPH09246260A (ja) * 1996-03-07 1997-09-19 Kokusai Electric Co Ltd プラズマｃｖｄ装置
JPH11209875A (ja) * 1998-01-23 1999-08-03 Shin Etsu Chem Co Ltd カーボン製反応炉および熱分解窒化ホウ素成形体の製造方法
EP1139394A3 (en) 2000-03-30 2006-02-15 International Business Machines Corporation Method and device for electric field assisted anneal
US7816152B2 (en) 2007-04-11 2010-10-19 WaferMaster, Inc. In situ, ex situ and inline process monitoring, optimization and fabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004188368A (ja) 2002-12-13 2004-07-08 Ube Machinery Corporation Ltd 粉砕方法
JP2008085194A (ja) 2006-09-28 2008-04-10 Univ Of Tokyo 強誘電体デバイス
JP2009218438A (ja) 2008-03-11 2009-09-24 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014099517A (ja) 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2021048368A (ja) 2019-09-20 2021-03-25 キオクシア株式会社 記憶装置

Also Published As

Publication number Publication date
TW202314865A (zh) 2023-04-01
JP2023024959A (ja) 2023-02-21
KR102971945B1 (ko) 2026-06-01
KR20230022817A (ko) 2023-02-16

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