JP2022541417A5 - - Google Patents

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Publication number
JP2022541417A5
JP2022541417A5 JP2022501217A JP2022501217A JP2022541417A5 JP 2022541417 A5 JP2022541417 A5 JP 2022541417A5 JP 2022501217 A JP2022501217 A JP 2022501217A JP 2022501217 A JP2022501217 A JP 2022501217A JP 2022541417 A5 JP2022541417 A5 JP 2022541417A5
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JP
Japan
Prior art keywords
coating
multilayer structure
structure according
adhesion
functionalized
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Pending
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JP2022501217A
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English (en)
Japanese (ja)
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JP2022541417A (ja
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Priority claimed from PCT/US2020/041577 external-priority patent/WO2021011367A1/en
Publication of JP2022541417A publication Critical patent/JP2022541417A/ja
Publication of JP2022541417A5 publication Critical patent/JP2022541417A5/ja
Priority to JP2024108182A priority Critical patent/JP2024153658A/ja
Pending legal-status Critical Current

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JP2022501217A 2019-07-12 2020-07-10 基板上の無機放射線パターン形成組成物の安定化界面 Pending JP2022541417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024108182A JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962873489P 2019-07-12 2019-07-12
US62/873,489 2019-07-12
PCT/US2020/041577 WO2021011367A1 (en) 2019-07-12 2020-07-10 Stabilized interfaces of inorganic radiation patterning compositions on substrates

Related Child Applications (1)

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JP2024108182A Division JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Publications (2)

Publication Number Publication Date
JP2022541417A JP2022541417A (ja) 2022-09-26
JP2022541417A5 true JP2022541417A5 (https=) 2022-10-12

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ID=74103060

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JP2022501217A Pending JP2022541417A (ja) 2019-07-12 2020-07-10 基板上の無機放射線パターン形成組成物の安定化界面
JP2024108182A Pending JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

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JP2024108182A Pending JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Country Status (6)

Country Link
US (2) US12360454B2 (https=)
EP (1) EP3997516A4 (https=)
JP (2) JP2022541417A (https=)
KR (1) KR20220035149A (https=)
TW (1) TWI838557B (https=)
WO (1) WO2021011367A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838557B (zh) 2019-07-12 2024-04-11 美商英培雅股份有限公司 輻射圖案化組合物在基板上的穩定化界面
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
US12002675B2 (en) 2020-06-18 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer outgassing prevention
WO2022209816A1 (ja) * 2021-04-01 2022-10-06 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
EP4095604A1 (en) * 2021-05-28 2022-11-30 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Hybrid photoresist composition for extreme ultraviolet photolithography applications
US12601975B2 (en) * 2021-06-17 2026-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Compositions for reducing resist consumption of extreme ultraviolet metallic type resist
US12334391B2 (en) * 2021-12-17 2025-06-17 Tokyo Electron Limited Method for patterning a substrate using photolithography
JP7634473B2 (ja) 2021-12-23 2025-02-21 信越化学工業株式会社 密着膜形成材料、パターン形成方法、及び密着膜の形成方法
KR20240136383A (ko) * 2022-01-19 2024-09-13 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 사용하기 위한 레지스트 하층
KR102769240B1 (ko) * 2022-07-12 2025-02-21 유한회사 디씨티머티리얼 반도체 euv 리소그래피 방법
JP7762634B2 (ja) * 2022-08-17 2025-10-30 信越化学工業株式会社 密着膜形成用組成物、パターン形成方法、及び密着膜の形成方法
KR102839122B1 (ko) 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물
KR20250160464A (ko) 2023-02-28 2025-11-13 닛산 가가쿠 가부시키가이샤 탄소-탄소 이중 결합을 가지는 실리콘 함유 레지스트 하층막 형성용 조성물

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US7361444B1 (en) 1998-02-23 2008-04-22 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
JP2000206680A (ja) 1999-01-14 2000-07-28 Mitsubishi Chemicals Corp 感光性組成物、感光性平版印刷版及び感光性平版印刷版の製版方法
US7709177B2 (en) * 1999-02-23 2010-05-04 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
JP4299921B2 (ja) 1999-07-05 2009-07-22 関西ペイント株式会社 ポジ型可視光感光性樹脂組成物及びそれを用いたレジストパターン形成方法
AU2001265390A1 (en) 2000-06-06 2001-12-17 Ekc Technology, Inc. Method of making electronic materials
US6809127B2 (en) 2001-10-04 2004-10-26 Cognis Corporation Radiation curable compositions with enhanced adhesion
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
US20050279995A1 (en) 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
US20060293478A1 (en) 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics
US7396631B2 (en) * 2005-10-07 2008-07-08 3M Innovative Properties Company Radiation curable thermal transfer elements
US20090047517A1 (en) 2007-06-27 2009-02-19 Francesco Caruso Multilayer polymer films
JP2011500216A (ja) 2007-10-17 2011-01-06 プリンストン ユニバーシティー 機能化基板とその製造方法
US8163461B2 (en) 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
US8207264B2 (en) 2008-07-11 2012-06-26 Tyco Healthcare Group Lp Functionalized inclusion complexes as crosslinkers
JP5415982B2 (ja) 2010-02-09 2014-02-12 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 下層組成物および下層を像形成する方法
US8715907B2 (en) * 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
US8703386B2 (en) 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
US9195137B2 (en) 2012-03-08 2015-11-24 Nissan Chemical Industries, Ltd. Composition for forming highly adhesive resist underlayer film
US9851639B2 (en) * 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
IN2015DN04178A (https=) 2012-11-05 2015-10-16 Dow Global Technologies Llc
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
WO2015037398A1 (ja) 2013-09-11 2015-03-19 Jsr株式会社 多層レジストプロセス用無機膜形成組成物及びパターン形成方法
US9372402B2 (en) 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
US20150234272A1 (en) 2014-02-14 2015-08-20 Intel Corporation Metal oxide nanoparticles and photoresist compositions
JP6458799B2 (ja) 2014-03-24 2019-01-30 Jsr株式会社 パターン形成方法
KR102952227B1 (ko) 2014-10-23 2026-04-13 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
WO2016080226A1 (ja) * 2014-11-19 2016-05-26 日産化学工業株式会社 架橋反応性シリコン含有膜形成組成物
WO2017059011A1 (en) 2015-09-30 2017-04-06 E Ink Corporation Polyurethane adhesive layers for electro-optic assemblies
KR102508142B1 (ko) * 2015-10-13 2023-03-08 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
JP6534959B2 (ja) 2016-04-21 2019-06-26 信越化学工業株式会社 有機膜の形成方法及び半導体装置用基板の製造方法
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
US10082736B2 (en) * 2017-01-13 2018-09-25 International Business Machines Corporation Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
US10096477B2 (en) 2017-02-15 2018-10-09 International Business Machines Corporation Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
WO2018179704A1 (ja) 2017-03-27 2018-10-04 Jsr株式会社 パターン形成方法
KR102634520B1 (ko) 2017-11-20 2024-02-06 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
TWI875109B (zh) 2018-04-05 2025-03-01 美商英培雅股份有限公司 包含錫化合物的組合物及其應用
CN112368645B (zh) * 2018-06-13 2024-07-26 布鲁尔科技公司 用于euv光刻的粘附层
TWI884927B (zh) 2018-10-17 2025-06-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
TWI838557B (zh) 2019-07-12 2024-04-11 美商英培雅股份有限公司 輻射圖案化組合物在基板上的穩定化界面

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