JP2022541417A - 基板上の無機放射線パターン形成組成物の安定化界面 - Google Patents

基板上の無機放射線パターン形成組成物の安定化界面 Download PDF

Info

Publication number
JP2022541417A
JP2022541417A JP2022501217A JP2022501217A JP2022541417A JP 2022541417 A JP2022541417 A JP 2022541417A JP 2022501217 A JP2022501217 A JP 2022501217A JP 2022501217 A JP2022501217 A JP 2022501217A JP 2022541417 A JP2022541417 A JP 2022541417A
Authority
JP
Japan
Prior art keywords
coating
underlayer
multilayer structure
organometallic
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022501217A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022541417A5 (https=
Inventor
ジェイ カーディノー，ブライアン
チャン，シュー－ハオ
ケイ ストワーズ，ジェイソン
コクシス，マイケル
ペーテル・デ・シェッペル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inpria Corp
Original Assignee
Inpria Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inpria Corp filed Critical Inpria Corp
Publication of JP2022541417A publication Critical patent/JP2022541417A/ja
Publication of JP2022541417A5 publication Critical patent/JP2022541417A5/ja
Priority to JP2024108182A priority Critical patent/JP2024153658A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2022501217A 2019-07-12 2020-07-10 基板上の無機放射線パターン形成組成物の安定化界面 Pending JP2022541417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024108182A JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962873489P 2019-07-12 2019-07-12
US62/873,489 2019-07-12
PCT/US2020/041577 WO2021011367A1 (en) 2019-07-12 2020-07-10 Stabilized interfaces of inorganic radiation patterning compositions on substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024108182A Division JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Publications (2)

Publication Number Publication Date
JP2022541417A true JP2022541417A (ja) 2022-09-26
JP2022541417A5 JP2022541417A5 (https=) 2022-10-12

Family

ID=74103060

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022501217A Pending JP2022541417A (ja) 2019-07-12 2020-07-10 基板上の無機放射線パターン形成組成物の安定化界面
JP2024108182A Pending JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024108182A Pending JP2024153658A (ja) 2019-07-12 2024-07-04 基板上の無機放射線パターン形成組成物の安定化界面

Country Status (6)

Country Link
US (2) US12360454B2 (https=)
EP (1) EP3997516A4 (https=)
JP (2) JP2022541417A (https=)
KR (1) KR20220035149A (https=)
TW (1) TWI838557B (https=)
WO (1) WO2021011367A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838557B (zh) 2019-07-12 2024-04-11 美商英培雅股份有限公司 輻射圖案化組合物在基板上的穩定化界面
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
US12002675B2 (en) 2020-06-18 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer outgassing prevention
WO2022209816A1 (ja) * 2021-04-01 2022-10-06 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
EP4095604A1 (en) * 2021-05-28 2022-11-30 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Hybrid photoresist composition for extreme ultraviolet photolithography applications
US12601975B2 (en) * 2021-06-17 2026-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Compositions for reducing resist consumption of extreme ultraviolet metallic type resist
US12334391B2 (en) * 2021-12-17 2025-06-17 Tokyo Electron Limited Method for patterning a substrate using photolithography
JP7634473B2 (ja) 2021-12-23 2025-02-21 信越化学工業株式会社 密着膜形成材料、パターン形成方法、及び密着膜の形成方法
KR20240136383A (ko) * 2022-01-19 2024-09-13 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 사용하기 위한 레지스트 하층
KR102769240B1 (ko) * 2022-07-12 2025-02-21 유한회사 디씨티머티리얼 반도체 euv 리소그래피 방법
JP7762634B2 (ja) * 2022-08-17 2025-10-30 信越化学工業株式会社 密着膜形成用組成物、パターン形成方法、及び密着膜の形成方法
KR102839122B1 (ko) 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물
KR20250160464A (ko) 2023-02-28 2025-11-13 닛산 가가쿠 가부시키가이샤 탄소-탄소 이중 결합을 가지는 실리콘 함유 레지스트 하층막 형성용 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011164345A (ja) * 2010-02-09 2011-08-25 Shin-Etsu Chemical Co Ltd レジスト下層膜材料、パターン形成方法
JP2014529754A (ja) * 2011-08-10 2014-11-13 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ネガ型レジスト用の現像可能な底部反射防止コーティング組成物
JP2019500490A (ja) * 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
WO2021011367A1 (en) * 2019-07-12 2021-01-21 Inpria Corporation Stabilized interfaces of inorganic radiation patterning compositions on substrates
JP2021527949A (ja) * 2018-06-13 2021-10-14 ブルーワー サイエンス アイ エヌ シー． Ｅｕｖリソグラフィ用接着層

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US7361444B1 (en) 1998-02-23 2008-04-22 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
JP2000206680A (ja) 1999-01-14 2000-07-28 Mitsubishi Chemicals Corp 感光性組成物、感光性平版印刷版及び感光性平版印刷版の製版方法
US7709177B2 (en) * 1999-02-23 2010-05-04 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
JP4299921B2 (ja) 1999-07-05 2009-07-22 関西ペイント株式会社 ポジ型可視光感光性樹脂組成物及びそれを用いたレジストパターン形成方法
AU2001265390A1 (en) 2000-06-06 2001-12-17 Ekc Technology, Inc. Method of making electronic materials
US6809127B2 (en) 2001-10-04 2004-10-26 Cognis Corporation Radiation curable compositions with enhanced adhesion
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
US20050279995A1 (en) 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
US20060293478A1 (en) 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics
US7396631B2 (en) * 2005-10-07 2008-07-08 3M Innovative Properties Company Radiation curable thermal transfer elements
US20090047517A1 (en) 2007-06-27 2009-02-19 Francesco Caruso Multilayer polymer films
JP2011500216A (ja) 2007-10-17 2011-01-06 プリンストン ユニバーシティー 機能化基板とその製造方法
US8163461B2 (en) 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
US8207264B2 (en) 2008-07-11 2012-06-26 Tyco Healthcare Group Lp Functionalized inclusion complexes as crosslinkers
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
US8703386B2 (en) 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
US9195137B2 (en) 2012-03-08 2015-11-24 Nissan Chemical Industries, Ltd. Composition for forming highly adhesive resist underlayer film
US9851639B2 (en) * 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
IN2015DN04178A (https=) 2012-11-05 2015-10-16 Dow Global Technologies Llc
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
WO2015037398A1 (ja) 2013-09-11 2015-03-19 Jsr株式会社 多層レジストプロセス用無機膜形成組成物及びパターン形成方法
US9372402B2 (en) 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
US20150234272A1 (en) 2014-02-14 2015-08-20 Intel Corporation Metal oxide nanoparticles and photoresist compositions
JP6458799B2 (ja) 2014-03-24 2019-01-30 Jsr株式会社 パターン形成方法
KR102952227B1 (ko) 2014-10-23 2026-04-13 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
WO2016080226A1 (ja) * 2014-11-19 2016-05-26 日産化学工業株式会社 架橋反応性シリコン含有膜形成組成物
WO2017059011A1 (en) 2015-09-30 2017-04-06 E Ink Corporation Polyurethane adhesive layers for electro-optic assemblies
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
JP6534959B2 (ja) 2016-04-21 2019-06-26 信越化学工業株式会社 有機膜の形成方法及び半導体装置用基板の製造方法
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
US10082736B2 (en) * 2017-01-13 2018-09-25 International Business Machines Corporation Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
US10096477B2 (en) 2017-02-15 2018-10-09 International Business Machines Corporation Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
WO2018179704A1 (ja) 2017-03-27 2018-10-04 Jsr株式会社 パターン形成方法
KR102634520B1 (ko) 2017-11-20 2024-02-06 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
TWI875109B (zh) 2018-04-05 2025-03-01 美商英培雅股份有限公司 包含錫化合物的組合物及其應用
TWI884927B (zh) 2018-10-17 2025-06-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011164345A (ja) * 2010-02-09 2011-08-25 Shin-Etsu Chemical Co Ltd レジスト下層膜材料、パターン形成方法
JP2014529754A (ja) * 2011-08-10 2014-11-13 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ネガ型レジスト用の現像可能な底部反射防止コーティング組成物
JP2019500490A (ja) * 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2021527949A (ja) * 2018-06-13 2021-10-14 ブルーワー サイエンス アイ エヌ シー． Ｅｕｖリソグラフィ用接着層
WO2021011367A1 (en) * 2019-07-12 2021-01-21 Inpria Corporation Stabilized interfaces of inorganic radiation patterning compositions on substrates

Also Published As

Publication number Publication date
WO2021011367A1 (en) 2021-01-21
US20250298317A1 (en) 2025-09-25
US12360454B2 (en) 2025-07-15
US20210011383A1 (en) 2021-01-14
JP2024153658A (ja) 2024-10-29
EP3997516A1 (en) 2022-05-18
TWI838557B (zh) 2024-04-11
KR20220035149A (ko) 2022-03-21
TW202104240A (zh) 2021-02-01
EP3997516A4 (en) 2023-08-02

Similar Documents

Publication Publication Date Title
US20250298317A1 (en) Stabilized interfaces of inorganic radiation patterning compositions on substrates
US12399426B2 (en) Patterned organometallic photoresists and methods of patterning
JP7168715B2 (ja) 半導体フォトレジスト用組成物およびこれを利用したパターン形成方法
KR102573328B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102876476B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP2025023814A (ja) 半導体フォトレジスト用組成物およびこれを利用したパターン形成方法
KR102904140B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US20190101829A1 (en) Photoresist patterning on silicon nitride
KR20220035750A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102678333B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TW202538410A (zh) 半導體光阻組合物和使用所述組合物形成圖案的方法
JP2025026349A (ja) 半導体フォトレジスト用組成物およびこれを利用したパターン形成方法
KR102854753B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20250142134A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102848413B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI914151B (zh) 半導體光阻組成物及使用所述組成物形成圖案的方法
KR102586099B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TW202601270A (zh) 半導體光阻組成物及使用該組成物形成圖案的方法
KR20250145344A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TW202540773A (zh) 形成圖案的方法和光阻膜
JP2025138568A (ja) 半導体フォトレジスト用組成物およびこれを利用したパターン形成方法
TW202605513A (zh) 有機金屬氧化物光阻的烷基磺酸顯影劑組合物及圖案化方法
KR20250125800A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20260001371A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20260019319A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221003

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221003

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230804

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230822

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20240305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240704

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20240711

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20241011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260210