JP2022534777A - 化学蒸着チャンバー物品 - Google Patents
化学蒸着チャンバー物品 Download PDFInfo
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 76
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 112
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000011241 protective layer Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 230000003071 parasitic effect Effects 0.000 claims description 26
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910003465 moissanite Inorganic materials 0.000 description 99
- 238000000151 deposition Methods 0.000 description 30
- 230000008021 deposition Effects 0.000 description 29
- 239000010410 layer Substances 0.000 description 29
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 22
- 238000000576 coating method Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 229910002804 graphite Inorganic materials 0.000 description 17
- 239000010439 graphite Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 238000000407 epitaxy Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910020323 ClF3 Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
- DUMHRFXBHXIRTD-UHFFFAOYSA-N Tantalum carbide Chemical compound [Ta+]#[C-] DUMHRFXBHXIRTD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
・本体と、炭化ケイ素を含む表面とを有する物品を提供するステップと、
・チャンバーでの半導体部品の製造中に寄生蒸着された表面の少なくとも一部に保護層を設けるステップと、を含み、保護層を設けるステップは、酸化表面を得るステップを含む。
・ハロゲン系エッチング液、好ましくはCl2系、純粋なCl2、またはHClエッチング液で物品を処理するステップを含む。
・物品を酸化環境に曝すステップと、
・前記物品を所定の高い温度に加熱するステップと、をさらに含み、前記エッチングステップ中に前記物品の前記表面上に形成した炭素はCOまたはCO2として酸化、除去され、それによって、前記チャンバーでの前記半導体部品の前記製造中に寄生蒸着された前記物品の前記表面の前記少なくとも一部を覆うSiO2またはSiOまたはSiOxCy保護層を形成する。
・本体と、炭化ケイ素を含む表面とを有する物品を提供するステップ101と、
・物品をCl2系、純粋なCl2、またはHClエッチング液に曝すステップ102と、を含む。チャンバーでの半導体部品の製造中に寄生蒸着される表面の少なくとも一部をエッチング液に曝す。しかしながら、好ましくは、寄生蒸着が起きるプロセスガスに面するか、かつ/または接触する少なくともホール表面全体がエッチングされる。より好ましくは、物品全体、すなわち物品の表面のすべてがエッチングされる。
・エッチングされると、物品は酸化環境にさらされる103。
・最後のステップとして、物品は所定の高い温度に加熱され104、エッチングのステップの間に物品の表面に形成した炭素がCOまたはCO2として酸化され、除去され、チャンバーでの半導体部品の製造中に寄生蒸着される物品の表面の少なくとも一部を覆うSiO2またはSiOまたはSiOxCy保護層から除かれる。
Claims (14)
- 半導体部品の製造のためのウエハ担体などの化学蒸着チャンバー物品であって、前記チャンバー物品は、本体と金属炭化物を含む表面とを有し、前記表面には、前記チャンバー内での前記半導体部品の前記製造の間に寄生蒸着される前記表面の少なくとも一部に保護層が設けられ、前記保護層は酸化表面を含むことを特徴とする化学蒸着チャンバー物品。
- 前記金属炭化物が炭化ケイ素を含む請求項1に記載の化学蒸着チャンバー物品。
- 前記金属炭化物が炭化タンタルを含む請求項1に記載の化学蒸着チャンバー物品。
- 前記保護層が二酸化ケイ素表面を含む請求項1、2または3に記載の化学蒸着チャンバー物品。
- 前記保護層が一酸化ケイ素表面を含む請求項1、2または3に記載の化学蒸着チャンバー物品。
- 前記保護層がオキシ炭化ケイ素表面を含む請求項1、2または3に記載の化学蒸着チャンバー物品。
- 前記物品の前記本体が炭化ケイ素からなる請求項1~6のいずれか1項に記載の化学蒸着チャンバー物品。
- 前記物品の前記本体が、炭化ケイ素で被覆した表面を有するグラファイトコアからなる請求項1~7のいずれか1項に記載の化学蒸着チャンバー物品。
- 前記保護層が、前記物品をCl2系、純粋なCl2、またはHClエッチング液にさらすことによって得られる請求項1~8のいずれか1項に記載の化学蒸着チャンバー物品。
- 前記保護層が、SiO2またはSiOまたはSiOxCy保護層への前記エッチングから得られた前記表面で、炭素を転換する高温で前記エッチングした物品を酸化処理することによって得られる請求項9に記載の化学蒸着チャンバー物品。
- 半導体部品の製造のための化学蒸着チャンバー物品の処理方法であって、
本体と、炭化ケイ素を含む表面とを有する前記物品を用意するステップと、
前記チャンバー内での前記半導体部品の前記製造の間に寄生蒸着される前記表面の少なくとも一部に保護層を設けるステップと、を含み、
前記保護層を設けるステップは、酸化表面を得ることを含む、半導体部品の製造のための化学蒸着チャンバー物品の処理方法。 - 前記保護物品を提供するステップは、
前記物品をハロゲン系エッチング液、好ましくはCl2系、純粋なCl2、またはHClエッチング液にさらすステップを含む請求項11に記載の化学蒸着チャンバー物品の処理方法。 - 前記保護物品を提供するステップは、
前記物品を酸化環境にさらすステップと、
前記物品を所定の高い温度に加熱するステップと、をさらに含み、
前記エッチングステップ中に前記物品の前記表面上に形成した炭素はCOまたはCO2として酸化、除去され、それによって、前記チャンバーでの前記半導体部品の前記製造中に寄生蒸着された前記物品の前記表面の前記少なくとも一部を覆うSiO2またはSiOまたはSiOxCy保護層を形成する請求項11および12のいずれかに記載の化学蒸着チャンバー物品の処理方法。 - ウエハ担体、ウエハサセプタ、予熱リング、リフトピン、カバー部材、天井またはエピタキシャル化学蒸着成長チャンバーで使用される他の部品の群のうちいずれか1つを含む請求項11、12または13のいずれかに1項に記載の化学蒸着チャンバー物品の製造方法によって処理された化学蒸着チャンバー物品。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293713A (ja) * | 1986-06-13 | 1987-12-21 | Toshiba Ceramics Co Ltd | エピタキシヤル成長装置用サセプタ− |
JP2001250785A (ja) * | 2000-03-06 | 2001-09-14 | Toshiba Ceramics Co Ltd | 炭化ケイ素が被覆された半導体熱処理用部材の洗浄方法 |
US20030215963A1 (en) * | 2002-05-17 | 2003-11-20 | Amrhein Fred | Plasma etch resistant coating and process |
JP2006041358A (ja) * | 2004-07-29 | 2006-02-09 | Shindengen Electric Mfg Co Ltd | サセプタおよび化学気相成長方法 |
JP2007511911A (ja) * | 2003-11-14 | 2007-05-10 | ラム リサーチ コーポレーション | 遊離炭素を取り除くために扱われた半導体基板処理装置の炭化シリコン部品 |
JP2007189203A (ja) * | 2005-12-02 | 2007-07-26 | Rohm & Haas Electronic Materials Llc | 半導体処理 |
JP2012060036A (ja) * | 2010-09-10 | 2012-03-22 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851678A (en) * | 1995-04-06 | 1998-12-22 | General Electric Company | Composite thermal barrier coating with impermeable coating |
US7118781B1 (en) | 2003-04-16 | 2006-10-10 | Cree, Inc. | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
EP1612851B1 (en) * | 2004-06-30 | 2010-03-03 | Xycarb Ceramics B.V. | A method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate |
TW201218301A (en) * | 2010-10-28 | 2012-05-01 | Applied Materials Inc | Apparatus having improved substrate temperature uniformity using direct heating methods |
WO2012125275A2 (en) * | 2011-03-11 | 2012-09-20 | Applied Materials, Inc. | Apparatus for monitoring and controlling substrate temperature |
JP6196246B2 (ja) * | 2013-02-06 | 2017-09-13 | 東洋炭素株式会社 | 炭化ケイ素−炭化タンタル複合材及びサセプタ |
US10683433B2 (en) * | 2014-10-29 | 2020-06-16 | Ppg Industries Ohio, Inc. | Protective coating system for plastic substrate |
-
2019
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293713A (ja) * | 1986-06-13 | 1987-12-21 | Toshiba Ceramics Co Ltd | エピタキシヤル成長装置用サセプタ− |
JP2001250785A (ja) * | 2000-03-06 | 2001-09-14 | Toshiba Ceramics Co Ltd | 炭化ケイ素が被覆された半導体熱処理用部材の洗浄方法 |
US20030215963A1 (en) * | 2002-05-17 | 2003-11-20 | Amrhein Fred | Plasma etch resistant coating and process |
JP2007511911A (ja) * | 2003-11-14 | 2007-05-10 | ラム リサーチ コーポレーション | 遊離炭素を取り除くために扱われた半導体基板処理装置の炭化シリコン部品 |
JP2006041358A (ja) * | 2004-07-29 | 2006-02-09 | Shindengen Electric Mfg Co Ltd | サセプタおよび化学気相成長方法 |
JP2007189203A (ja) * | 2005-12-02 | 2007-07-26 | Rohm & Haas Electronic Materials Llc | 半導体処理 |
JP2012060036A (ja) * | 2010-09-10 | 2012-03-22 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
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